Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer

2019 ◽  
Vol 11 (51) ◽  
pp. 48086-48094
Author(s):  
Wen-Cheng Ke ◽  
Solomun Teklahymanot Tesfay ◽  
Tae-Yeon Seong ◽  
Zhong-Yi Liang ◽  
Chih-Yung Chiang ◽  
...  
Keyword(s):  
Solid State ◽  
Schottky Diodes ◽  
Capping Layer ◽  
Carbon Doped

Electrical Characterisation of Epitaxial (100) CoSi2/Si Contacts Obtained Using a Ti/Co Bilayer

1993 ◽  
Vol 320 ◽  
Author(s):  
A. Lauwers ◽  
A. Vercaemst ◽  
M. Van Hove ◽  
K. Kyllesbech Larsen ◽  
R. Verbeeck ◽  
...  
Keyword(s):  
Solid State ◽  
Electrical Properties ◽  
Low Temperature ◽  
Solid State Reaction ◽  
Schottky Diodes ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Bimetallic Layer ◽  
Temperature Resistivity

ABSTRACTIn this paper the electrical properties of epitaxial CoSi2 on Si obtained by solid-state reaction of a Ti/Co bimetallic layer are investigated. Low temperature resistivity, magnetoresistance and Hall data are presented. The CoSi2ISi Schottky diodes are characterised by current - voltage and capacitance - voltage measurements at temperatures varying between - 100°C and 60°C.

scholarly journals Thermoluminescent properties of LaAlO3:C crystals synthesized by solid state reaction applied to UV Dosimetry

2019 ◽  
Vol 7 (2A) ◽  
Author(s):  
Neriene Alves ◽  
Wilmar Barbosa Ferraz ◽  
Luiz Oliveira Faria
Keyword(s):  
Solid State ◽  
Solid State Reaction ◽  
Solid State Reaction Method ◽  
Hydrogen Atmosphere ◽  
X Ray Diffraction ◽  
X Ray ◽  
Carbon Doped ◽  
Lanthanum Aluminate ◽  
Uv Lamp ◽  
Low Exposure

In this work, the thermoluminescent (TL) response of carbon doped lanthanum aluminate crystals grown by solid state reaction method was investigated.  Three syntheses using different combinations of Al2O3, La2O3 and 0.1 wt % of carbon atoms were conducted. The 1:1 mixture of aluminum and lanthanum oxide was mixed with 0.1wt.% carbon and annealed at 1700°C for two hours in a hydrogen atmosphere. The X-ray diffraction analysis revealed the formation of the rhombohedral LaAlO3 crystallographic phase. Ultraviolet-visible spectroscopies were obtained and F and F+ centers were identified ascribed.  Fourier transform infrared spectroscopic data show higher and lower frequencies assigned to AlO6 octahedra in LaAlO3. The UV irradiations were carried out using a commercial 8W UV lamp. Thermoluminescence measurements were performed at a Harshaw 4500 TL reader. The three syntheses were very efficient to obtain carbon doped LaAlO3 crystals with high thermoluminescent output, for low exposure rates of UVR fields.

Microwave Power Protectors

2017 ◽  
pp. 244-282
Author(s):  
Echchakhaoui Khalifa ◽  
Abdelmounim Elhassane ◽  
Bennis Hamid
Keyword(s):  
Solid State ◽  
Microwave Power ◽  
Active Component ◽  
Schottky Diodes ◽  
Pin Diode ◽  
Technological Solution ◽  
Attenuation Rate ◽  
Variable Attenuator ◽  
Design Power

In this chapter, microwave power attenuator and limiter theory and technological realization are presented. The chapter is divided in two sections, first section is dedicated to attenuator circuits and the second section is dedicated to power limiters circuits. Authors describe, in first section, principles characteristic and fundamentals of attenuator and detail of the most common topologies such as T-attenuator, PI-attenuator and bridged-attenuator. After a presentation of important equations needed to calculate attenuation rate provided by each of these previous cited topologies, authors present the variable attenuator based on active component (PIN diode, Transistors). In second section, authors present power limiter characteristic and fundamentals. Afterward, they present a state of arts of technological solution to design power limiter based on solid state components such as PIN diode and Schottky diodes.

Solid-state NMR and EPR analysis of carbon-doped titanium dioxide photocatalysts (TiO2−xCx)

2009 ◽  
Vol 35 (2) ◽  
pp. 74-81 ◽  
Author(s):  
Enrique A. Reyes-Garcia ◽  
Yanping Sun ◽  
Karla R. Reyes-Gil ◽  
Daniel Raftery
Keyword(s):  
Titanium Dioxide ◽  
Solid State ◽  
Solid State Nmr ◽  
Carbon Doped ◽  
Doped Titanium Dioxide

New chitin derivatives and their Schottky diodes: Synthesis and characterization

2019 ◽  
Vol 27 (8) ◽  
pp. 476-487 ◽  
Author(s):  
Önder Aksoy ◽  
İlhan Uzun ◽  
Giray Topal ◽  
Ömer Çelik ◽  
Yusuf Selim Ocak ◽  
...  
Keyword(s):  
Solid State ◽  
Electrical Properties ◽  
Solid State Nmr ◽  
Schottky Diodes ◽  
Synthesis And Characterization ◽  
Photoelectrical Properties ◽  
Diphenic Acid ◽  
Chitin Derivatives

First, chitin was reacted with 4,5-dichlorophthalic acid and diphenic acid, and thus two new chitin derivatives (C45DA and CDA) were synthesized. Then, C45DA and CDA were characterized by various spectroscopies and techniques (FTIR, 13C CP-MAS solid-state NMR, XRPD, SEM, and TGA/DTA). Besides, some electrical properties of C45DA were measured. After the characterization process, the Schottky diodes of C45DA and CDA were made. It was determined that these diodes showed photodiode characteristics at the same time. Later on, both electrical properties ( ϕb, n, and Rs) and photoelectrical properties ( I Illumination/ I Dark, I SC, and V OC) of these diodes were determined.

scholarly journals Computational synthesis of carbon doped BaAl4S7-xCx as a unique solid-state device

2019 ◽  
Vol 1378 ◽  
pp. 022039
Author(s):  
M.E Emetere ◽  
J.T Abodunrin ◽  
O.O Fayomi ◽  
C.O Iroham
Keyword(s):  
Solid State ◽  
Carbon Doped ◽  
Computational Synthesis ◽  
State Device ◽  
Solid State Device

ROLE OF TITANIUM CAPPING LAYER IN AMORPHOUS SILICON NANOWIRE GROWTH BY SOLID-STATE REACTION

NANO ◽  
2006 ◽  
Vol 01 (02) ◽  
pp. 159-165 ◽  
Author(s):  
YOUNGSIK SONG ◽  
JAEWU CHOI
Keyword(s):  
Electron Microscopy ◽  
Solid State ◽  
Amorphous Silicon ◽  
Silicon Nanowires ◽  
Solid State Reaction ◽  
Silicon Nanowire ◽  
Nickel Film ◽  
Nanowire Growth ◽  
Capping Layer

Role of titanium capping layer in synthesis of amorphous silicon nanowires by solid-state reaction was studied by Raman spectroscopy, energy dispersive spectroscopy, scanning electron microscopy and transmission electron microscopy. Silicon nanowires were not grown from 20nm thick nickel film on silicon (100) but grown from 20nm thick nickel film on silicon (100) with 100 nm thick titanium capping layer. The study shows that titanium capping layer plays an important role in formation of Ni–Ti–Si ternary alloy, which acts as a nucleation seed and a promoter for silicon nanowire growth.

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