Spontaneous Generation of a Molecular Thin Hydrophobic Skin Layer on a Sub-20 nm, High-k Polymer Dielectric for Extremely Stable Organic Thin-Film Transistor Operation

2019 ◽  
Vol 11 (32) ◽  
pp. 29113-29123 ◽  
Author(s):  
Junhwan Choi ◽  
Jongsun Yoon ◽  
Min Ju Kim ◽  
Kwanyong Pak ◽  
Changhyeon Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Skin Layer ◽  
Spontaneous Generation ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Polymer Dielectric ◽  
High K ◽  
20 Nm

Root cause of hysteresis in organic thin film transistor with polymer dielectric

2006 ◽  
Vol 7 (5) ◽  
pp. 271-275 ◽  
Author(s):  
Young H. Noh ◽  
S. Young Park ◽  
Soon-Min Seo ◽  
Hong H. Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Root Cause ◽  
Polymer Dielectric

scholarly journals Three-level stencil alignment fabrication of a high-k gate stack organic thin film transistor

2011 ◽  
Vol 88 (8) ◽  
pp. 2496-2499 ◽  
Author(s):  
Nenad V. Cvetkovic ◽  
Katrin Sidler ◽  
Veronica Savu ◽  
Jürgen Brugger ◽  
Dimitrios Tsamados ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Gate Stack ◽  
High K

scholarly journals Solution-Processed High-Voltage Organic Thin Film Transistor

MRS Advances ◽  
2017 ◽  
Vol 2 (51) ◽  
pp. 2961-2966 ◽  
Author(s):  
Andy Shih ◽  
Akintunde Ibitayo Akinwande
Keyword(s):  
Thin Film ◽  
High Voltage ◽  
Thin Film Transistor ◽  
Sem Analysis ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Parylene C ◽  
Solution Processed ◽  
Device Architecture ◽  
High K

ABSTRACTA 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) based high-voltage organic thin film transistor (HVOTFT) has been demonstrated via a low temperature (< 100°C) solution-processed fabrication method on borosilicate glass. High-voltage is an area not well developed in the organic transistor field and can be of benefit to various applications requiring such an operating range beyond that of conventional thin film transistors. Here, our HVOTFT exhibited a mobility μ of 0.005 cm2 V-1 s-1 and a breakdown voltage of VDS > 120 V, the latter being due a space-charge limiting device architecture in which the channel is partially gated. Non-saturating I-V characteristic behavior was observed. This is in contrast with our vacuum-deposited pentacene HVOTFTs which exhibited breakdown voltages of VDS > 400 V. TIPS-pentacene was grown via a drop-casting deposition, with its crystallinity and grain size deduced under XRD and SEM analysis. The HVOTFT was fabricated with a dielectric stack of a high-k Bi1.5Zn1Nb1.5O7 (BZN) and parylene-C.

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