High-Performance Low-Voltage Flexible Photodetector Arrays Based on All-Solid-State Organic Electrochemical Transistors for Photosensing and Imaging

2019 ◽  
Vol 11 (22) ◽  
pp. 20214-20224 ◽  
Author(s):  
Yujie Yan ◽  
Xiaomin Wu ◽  
Qizhen Chen ◽  
Yaqian Liu ◽  
Huipeng Chen ◽  
...  
2020 ◽  
Vol 6 (27) ◽  
pp. eabb2958 ◽  
Author(s):  
A. Melianas ◽  
T. J. Quill ◽  
G. LeCroy ◽  
Y. Tuchman ◽  
H. v. Loo ◽  
...  

Devices with tunable resistance are highly sought after for neuromorphic computing. Conventional resistive memories, however, suffer from nonlinear and asymmetric resistance tuning and excessive write noise, degrading artificial neural network (ANN) accelerator performance. Emerging electrochemical random-access memories (ECRAMs) display write linearity, which enables substantially faster ANN training by array programing in parallel. However, state-of-the-art ECRAMs have not yet demonstrated stable and efficient operation at temperatures required for packaged electronic devices (~90°C). Here, we show that (semi)conducting polymers combined with ion gel electrolyte films enable solid-state ECRAMs with stable and nearly temperature-independent operation up to 90°C. These ECRAMs show linear resistance tuning over a >2× dynamic range, 20-nanosecond switching, submicrosecond write-read cycling, low noise, and low-voltage (±1 volt) and low-energy (~80 femtojoules per write) operation combined with excellent endurance (>109 write-read operations at 90°C). Demonstration of these high-performance ECRAMs is a fundamental step toward their implementation in hardware ANNs.


Author(s):  
Klaus-Ruediger Peters

A new generation of high performance field emission scanning electron microscopes (FSEM) is now commercially available (JEOL 890, Hitachi S 900, ISI OS 130-F) characterized by an "in lens" position of the specimen where probe diameters are reduced and signal collection improved. Additionally, low voltage operation is extended to 1 kV. Compared to the first generation of FSEM (JE0L JSM 30, Hitachi S 800), which utilized a specimen position below the final lens, specimen size had to be reduced but useful magnification could be impressively increased in both low (1-4 kV) and high (5-40 kV) voltage operation, i.e. from 50,000 to 200,000 and 250,000 to 1,000,000 x respectively.At high accelerating voltage and magnification, contrasts on biological specimens are well characterized1 and are produced by the entering probe electrons in the outmost surface layer within -vl nm depth. Backscattered electrons produce only a background signal. Under these conditions (FIG. 1) image quality is similar to conventional TEM (FIG. 2) and only limited at magnifications >1,000,000 x by probe size (0.5 nm) or non-localization effects (%0.5 nm).


1999 ◽  
Vol 35 (2) ◽  
pp. 112 ◽  
Author(s):  
Y. Moisiadis ◽  
I. Bouras ◽  
C. Papadas ◽  
J.-P. Schoellkopf
Keyword(s):  

2021 ◽  
pp. 2007864
Author(s):  
Woo Jin Hyun ◽  
Cory M. Thomas ◽  
Norman S. Luu ◽  
Mark C. Hersam

Author(s):  
Francesco Centurelli ◽  
Giuseppe Scotti ◽  
Alessandro Trifiletti ◽  
Gaetano Palumbo

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