Stretchable Polymer Gate Dielectric by Ultraviolet-Assisted Hafnium Oxide Doping at Low Temperature for High-Performance Indium Gallium Tin Oxide Transistors

2019 ◽  
Vol 11 (24) ◽  
pp. 21675-21685 ◽  
Author(s):  
Jae Seok Hur ◽  
Jeong Oh Kim ◽  
Hyeon A Kim ◽  
Jae Kyeong Jeong
Keyword(s):  
Low Temperature ◽  
Tin Oxide ◽  
Hafnium Oxide ◽  
High Performance ◽  
Gate Dielectric ◽  
Indium Gallium

Low temperature synthesis of porous tin oxide anode for high-performance lithium-ion battery

2013 ◽  
Vol 109 ◽  
pp. 461-467 ◽  
Author(s):  
Alok Kumar Rai ◽  
Ly Tuan Anh ◽  
Jihyeon Gim ◽  
Vinod Mathew ◽  
Jaekook Kim
Keyword(s):  
Low Temperature ◽  
Lithium Ion Battery ◽  
Tin Oxide ◽  
High Performance ◽  
Lithium Ion ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Oxide Anode

Low temperature cross-linked, high performance polymer gate dielectrics for solution-processed organic field-effect transistors

2015 ◽  
Vol 6 (32) ◽  
pp. 5884-5890 ◽  
Author(s):  
Shengxia Li ◽  
Linrun Feng ◽  
Jiaqing Zhao ◽  
Xiaojun Guo ◽  
Qing Zhang
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Cross Linking ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
High Performance Polymer

Thermal cross-linking the bi-functional polymer thin-films at low temperature for gate dielectric application in solution processed organic field-effect transistors.

High-Performance and Low-Temperature-Compatible p-Channel Polycrystalline-Silicon TFTs Using Hafnium-Silicate Gate Dielectric

2007 ◽  
Vol 28 (10) ◽  
pp. 902-904 ◽  
Author(s):  
Ming-Jui Yang ◽  
Chao-Hsin Chien ◽  
Yi-Hsien Lu ◽  
Guang-Li Luo ◽  
Su-Ching Chiu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Gate Dielectric ◽  
Hafnium Silicate

High performance solution processed zirconium oxide gate dielectric appropriate for low temperature device application

2015 ◽  
Vol 589 ◽  
pp. 90-94 ◽  
Author(s):  
Musarrat Hasan ◽  
Manh-Cuong Nguyen ◽  
Hyojin Kim ◽  
Seung-Won You ◽  
Yoon-Seok Jeon ◽  
...  
Keyword(s):  
Low Temperature ◽  
Zirconium Oxide ◽  
High Performance ◽  
Gate Dielectric ◽  
Solution Processed ◽  
Device Application

An Advanced High-k Transistor Utilizing Metal-Organic Precursors in an ALD Deposition of Hafnium Oxide and Hafnium Silicate with Ozone as Oxidizer

2004 ◽  
Vol 811 ◽  
Author(s):  
J. Gutt ◽  
G.A. Brown ◽  
Yoshi Senzaki ◽  
Seung Park
Keyword(s):  
Hafnium Oxide ◽  
High Performance ◽  
Gate Dielectric ◽  
Electrical Characterization ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Cmos Technology ◽  
Hafnium Silicate ◽  
High K ◽  
Metal Organic

AbstractThe International Technology Roadmap for Semiconductors (ITRS) has projected that continued scaling of planar CMOS technology to the 65nm node and beyond will require development of high-k films for transistor gate dielectric applications to allow further scaling of overall device sizes according to Moore's Law [1]. Researchers have recently been studying hafnium-based high-k dielectrics as an alternative to SiO2 [2]. The method of deposition of these films has been found to impact the applicability of the films for both low standby power and high performance applications [3]. Atomic Layer Deposition (ALD) has been among the more widely studied deposition techniques for these films, but previous work has emphasized ALD utilizing inorganic precursors [4]. In this paper, we shall describe a process in which hafnium oxide and hafnium silicate films were deposited from alternating pulses of volatile metal-organic Hf/Si liquid precursors and ozone on 200mm diameter Si substrates using a single wafer ALD system. Electrical characterization of the films is presented, including equivalent oxide thickness (EOT), gate leakage, and electron mobility data, showing an achievement of EOT's ranging from 1.19 to 1.69 nm with high field mobilities from 74% to more than 90% of that of SiO2 (2.1 nm film), and Jg in the range of 80mA to 3 A/cm2.

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