Improving the Open Circuit Voltage through Surface Oxygen Plasma Treatment and 11.7% Efficient Cu2ZnSnSe4 Solar Cell

2019 ◽  
Vol 11 (14) ◽  
pp. 13319-13325 ◽  
Author(s):  
Hitoshi Tampo ◽  
Shinho Kim ◽  
Takehiko Nagai ◽  
Hajime Shibata ◽  
Shigeru Niki
Keyword(s):  
Solar Cell ◽  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Oxygen Plasma Treatment ◽  
Surface Oxygen

Characteristics of ITO films with oxygen plasma treatment for thin film solar cell applications

2013 ◽  
Vol 48 (12) ◽  
pp. 5115-5120 ◽  
Author(s):  
Yong Seob Park ◽  
Eungkwon Kim ◽  
Byungyou Hong ◽  
Jaehyoeng Lee
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Plasma Treatment ◽  
Thin Film Solar Cell ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Ito Films

Characteristics of aluminum-doped zinc oxide films with oxygen plasma treatment for solar cell applications

2013 ◽  
Vol 547 ◽  
pp. 47-51 ◽  
Author(s):  
Yong Seob Park ◽  
Munsoo Seo ◽  
Junsin Yi ◽  
Donggun Lim ◽  
Jaehyeong Lee
Keyword(s):  
Zinc Oxide ◽  
Solar Cell ◽  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxide Films ◽  
Oxygen Plasma Treatment ◽  
Zinc Oxide Films ◽  
Aluminum Doped Zinc Oxide

Long-life Zinc Electrode Achieved by Oxygen Plasma Functionalization

2022 ◽  
Author(s):  
Minghui Qiu ◽  
Hongqi Liu ◽  
Jinbin Luo ◽  
Benjamin Tawiah ◽  
Shaohai Fu ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Functional Groups ◽  
Treatment Strategy ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Zinc Electrode ◽  
Surface Oxygen ◽  
Oxygen Functional Groups ◽  
Long Life ◽  
Plasma Functionalization

A facile oxygen plasma treatment strategy is proposed to promote zinc dendrite inhibition by modifying the surface oxygen functional groups. The plasma-treated zinc electrode achieved an elongated working lifespan of...

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Breakdown Voltage ◽  
Oxygen Plasma ◽  
Cutoff Frequency ◽  
Chemical Vapor ◽  
Current Gain ◽  
Organic Chemical ◽  
Oxygen Plasma Treatment ◽  
Gan Hemt ◽  
High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

scholarly journals Numerical Simulation Analysis of Ag Crystallite Effects on Interface of Front Metal and Silicon in the PERC Solar Cell

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 592
Author(s):  
Myeong Sang Jeong ◽  
Yonghwan Lee ◽  
Ka-Hyun Kim ◽  
Sungjin Choi ◽  
Min Gu Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Surface Recombination ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Metal Interface ◽  
Ag Crystallites ◽  
Recombination Velocity

In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell; hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 ∘C to 950 ∘C. The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. Technology Computer-Aided Design (TCAD) simulation was used for detailed analysis on the effect of the surface recombination velocity at the silicon-metal interface on the PERC solar cell performance. Simulations showed that the increase in the distribution of Ag crystallites and surface recombination velocity at the silicon-metal interface played an important role in the decrease of open-circuit voltage of the PERC solar cell at temperatures of 850–900 ∘C, whereas the damage caused by the emitter over fire was determined as the main cause of the voltage drop at 950 ∘C. These results are expected to serve as a steppingstone for further research on improvement in the silicon-metal interface properties of silicon-based solar cells and investigation on high-efficiency solar cells.

LDI-MS examination of oxygen plasma modified polymer for designing tailored implant biointerfaces

RSC Advances ◽  
2014 ◽  
Vol 4 (50) ◽  
pp. 26240-26243 ◽  
Author(s):  
M. Gołda-Cępa ◽  
N. Aminlashgari ◽  
M. Hakkarainen ◽  
K. Engvall ◽  
A. Kotarba
Keyword(s):  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Parylene C ◽  
Modified Polymer

A versatile parylene C coating for biomaterials was fabricated by the mild oxygen plasma treatment and examined by the use of LDI-MS..

The improvement of open circuit voltage by the sputtered TiO2 layer for efficient perovskite solar cell

Vacuum ◽  
2016 ◽  
Vol 128 ◽  
pp. 91-98 ◽  
Author(s):  
Sheng Ge ◽  
Haitao Xu ◽  
Wenzhen Wang ◽  
Runan Cao ◽  
Yanglin Wu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cell ◽  
Open Circuit ◽  
Tio2 Layer
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