Continuously Enhanced Structural Disorder To Suppress the Lattice Thermal Conductivity of ZrNiSn-Based Half-Heusler Alloys by Multielement and Multisite Alloying with Very Low Hf Content

2019 ◽  
Vol 11 (14) ◽  
pp. 13397-13404 ◽  
Author(s):  
Bo Gong ◽  
Yu Li ◽  
Fusheng Liu ◽  
Jiaxu Zhu ◽  
Xiao Wang ◽  
...  
2017 ◽  
Vol 95 (4) ◽  
Author(s):  
Simen N. H. Eliassen ◽  
Ankita Katre ◽  
Georg K. H. Madsen ◽  
Clas Persson ◽  
Ole Martin Løvvik ◽  
...  

2001 ◽  
Vol 691 ◽  
Author(s):  
Terry M. Tritt

ABSTRACTRecently, there has been a renewed interest in thermoelectric material research. There are a number of different systems of potential thermoelectric (TE) materials that are under investigation by various research groups. Some of these research efforts focus on minimizing lattice thermal conductivity while other efforts focus on materials that exhibit large power factors. An overview of some of the requirements and strategies for the investigation and optimization of a new system of materials for potential thermoelectric applications will be discussed. Some of the newer concepts such as low-dimensional systems and Slack's phononglass, electron-crystal concept will be discussed. Current strategies for minimizing lattice thermal conductivity and also minimum requirements for thermopower will be presented. The emphasis of this paper will be to identify some of the more recent promising bulk materials and discuss the challenges and issues related to each. This paper is targeted more at “newcomers” to the field and does not discuss some of the very interesting results that are being reported in the thin film and superlattice materials. Some of the bulk materials which will be discussed include complex chalcogenides (e.g.CsBi4Te6 and pentatellurides such as the Zr1−XHfXTe5 system), half-Heusler alloys (e.g. TiNiSn1−XSbX), ceramic oxides (NaCo4O2), skutterudites (e.g. YbXCo4−XSb12 or EuXCo4−XSb12) and clathrates (e.g. Sr8Ga16Ge30). Each of these systems is distinctly different yet each exhibits some prospect as a potential thermoelectric material. Results will be presented and discussed on each system of materials.


2001 ◽  
Vol 691 ◽  
Author(s):  
S. Bhattacharya ◽  
Y. Xia ◽  
V. Ponnambalam ◽  
S.J. Poon ◽  
N. Thadani ◽  
...  

ABSTRACTHalf-Heusler alloys are currently being investigated for their potential as thermoelectric materials [1], [2]. They exhibit high negative thermopower (40-250μV/K) and favorable electrical resistivity (0.1-8mW•cm) at room temperature. Attractive power factors (α2σT) of about (0.2-1.0W/m•K) at room temperature and about 4W/m•K at 600K [3] have been reported in these materials. But in order to achieve a high figure-of-merit in the half-Heusler alloys, the relatively high thermal conductivity in these materials (∼ 10 W/m•K) must be reduced. The thermal conductivity in these materials is composed of mainly a lattice contribution, compared to a very small electronic component. The challenge is to reduce the relatively high lattice thermal conductivity in these materials. Reported in this paper is a significant reduction of lattice thermal conductivity (∼1.5 - 3.5W/m•K) in some Ti-based half-Heusler alloys. Samples have been prepared by ball milling and followed by shock-compaction that has resulted into reduced grain sizes in these materials. The effects of the microstructure on the thermal transport properties of the Half-Heusler alloys have been investigated and are presented and discussed herein.


2020 ◽  
Vol 10 (14) ◽  
pp. 4963 ◽  
Author(s):  
Ki Wook Bae ◽  
Jeong Yun Hwang ◽  
Sang-il Kim ◽  
Hyung Mo Jeong ◽  
Sunuk Kim ◽  
...  

Herein we report a significantly reduced lattice thermal conductivity of Sb-doped Hf0.35Zr0.35Ti0.3NiSn half-Heusler alloys with sub-micron grains (grain size of ~300 nm). Polycrystalline bulks of Hf0.35Zr0.35Ti0.3NiSn1−xSbx (x = 0.01, 0.02, 0.03) with a complete single half-Heusler phase are prepared using temperature-regulated melt spinning and subsequent spark plasma sintering without a long annealing process. In these submicron-grained bulks, a very low lattice thermal conductivity value of ~2.4 W m−1 K−1 is obtained at 300 K due to the intensified phonon scatterings by highly dense grain boundaries and point-defects (Zr and Ti substituted at Hf-sites). A maximum thermoelectric figure of merit, zT, of 0.5 at 800 K is obtained in Hf0.35Zr0.35Ti0.3NiSn0.99Sb0.01.


2002 ◽  
Vol 81 (1) ◽  
pp. 43-45 ◽  
Author(s):  
S. Bhattacharya ◽  
Terry M. Tritt ◽  
Y. Xia ◽  
V. Ponnambalam ◽  
S. J. Poon ◽  
...  

2021 ◽  
Author(s):  
Jun-Liang Chen ◽  
Hengquan Yang ◽  
Chengyan Liu ◽  
Jisheng Liang ◽  
Lei Miao ◽  
...  

Abstract Half-Heusler alloys, which possess the advantages of high thermal stability, large power factor and good mechanical property, have been attracted increasing interest in mid-temperature thermoelectric application. In this work, the extra Zr-doped TiZrxNiSn samples were successfully prepared by a modified solid-state reaction followed by spark plasma sintering. It demonstrates that extra Zr doping could not only improve the power factor on account of an increase in Seebeck coefficient but also suppress the lattice thermal conductivity originated from the strengthened phonon scattering by the superlattice nanodomains and the secondary nanoparticles. As a consequence, an increased power factor of 3.29 mW m− 1 K− 2 and a decreased lattice thermal conductivity of 1.74 W m− 1 K− 1 are achieved in TiZr0.015NiSn, leading to a peak ZT as high as 0.88 at 773 K and an average ZT value up to 0.62 in the temperature range of 373 − 773 K. This work gives a guidance for optimizing the thermoelectric performance of TiNiSn-based alloys by modulating the microstructures on the secondary nanophases and superlattice nanodomains.


2010 ◽  
Vol 03 (04) ◽  
pp. 227-231 ◽  
Author(s):  
CUI YU ◽  
TIEJUN ZHU ◽  
KAI XIAO ◽  
JUNJIE SHEN ◽  
XINBING ZHAO

(Zr,Hf)NiSn -based half-Heusler thermoelectric materials have been prepared by melt spinning and spark plasma sintering to refine the grain size. The grain sizes of the melt-spun thin ribbons varied from ~500 nm to ~3 μm and no significant grain growth were found for the bulk samples compacted by spark plasma sintering. Nanoscale precipitates dispersed in the matrix were observed, which should be more metallic due to the increase of the electrical conductivity. The reduction of lattice thermal conductivity was observed due to the refined grain sizes.


Sign in / Sign up

Export Citation Format

Share Document