Sc-Centered Octahedron Enables High-Speed Phase Change Memory with Improved Data Retention and Reduced Power Consumption

2019 ◽  
Vol 11 (11) ◽  
pp. 10848-10855 ◽  
Author(s):  
Yong Wang ◽  
Tianqi Guo ◽  
Guangyu Liu ◽  
Tao Li ◽  
Shilong Lv ◽  
...  
Keyword(s):  
Power Consumption ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Data Retention ◽  
Reduced Power Consumption ◽  
Change Memory

Superlattice-like Ge 8 Sb 92 /Ge thin films for high speed and low power consumption phase change memory application

2014 ◽  
Vol 93 ◽  
pp. 4-7 ◽  
Author(s):  
Yifeng Hu ◽  
Xiaoyi Feng ◽  
Jiwei Zhai ◽  
Ting Wen ◽  
Tianshu Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Power Consumption ◽  
Low Power ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Low Power Consumption ◽  
Change Memory

Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory application

2013 ◽  
Vol 103 (14) ◽  
pp. 142112 ◽  
Author(s):  
Zhonghua Zhang ◽  
Sannian Song ◽  
Zhitang Song ◽  
Yan Cheng ◽  
Feng Rao ◽  
...  
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Data Retention ◽  
Change Memory

Scandium doped Ge2Sb2Te5 for high-speed and low-power-consumption phase change memory

2018 ◽  
Vol 112 (13) ◽  
pp. 133104 ◽  
Author(s):  
Yong Wang ◽  
Yonghui Zheng ◽  
Guangyu Liu ◽  
Tao Li ◽  
Tianqi Guo ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Low Power Consumption ◽  
Change Memory

Carbon-Doped Sb-Rich Ge-Sb-Te Phase Change Material for High Speed and High Thermal Stability Phase Change Memory Applications

2017 ◽  
Vol 898 ◽  
pp. 1834-1838
Author(s):  
Tao Li ◽  
Liang Cai Wu ◽  
Zhi Tang Song ◽  
San Nian Song ◽  
Feng Rao ◽  
...  
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Data Retention ◽  
Carbon Doped ◽  
Sputtering Power ◽  
Memory Applications ◽  
Change Material ◽  
High Crystallization Temperature ◽  
Change Memory

Carbon-doped Sb-rich Ge-Sb-Te (Sb-CGST) is proved to be a promising candidate for phase change memory because of it high crystallization temperature (higher than 200°C) and 10-year data retention temperature (higher than 120°C). The carbon-doped Sb-rich Ge-Sb-Te (Sb-CGST) films were deposited on SiO2/Si (100) substrate by RF magnetron co-sputtering using CGST alloy target (a GST target containing 16 at. % C) and Sb targets at room temperature. The content of Sb in the films was controlled by adjusting the sputtering power ratio of CGST and Sb. The results showed that both of these two properties increase firstly and then decreases with increasing the content of Sb, which are superior to that of Ge2Sb2Te5. Furthermore, Sb-CGST based PCM cells were fabricated to investigate the property of material. 6ns pulse could realize SET operation, and 3.2 x 10-11J energy can realize RESET operation.

Investigation of Al-Sb-Se alloy for long data retention and low power consumption phase change memory application

2014 ◽  
Vol 116 (7) ◽  
pp. 074304 ◽  
Author(s):  
Zhonghua Zhang ◽  
Yifeng Gu ◽  
Sannian Song ◽  
Zhitang Song ◽  
Yan Cheng ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Low Power Consumption ◽  
Data Retention ◽  
Change Memory

Multi-level phase-change memory with ultralow power consumption and resistance drift

2021 ◽  
Author(s):  
Bin Liu ◽  
Kaiqi Li ◽  
Wanliang Liu ◽  
Jian Zhou ◽  
Liangcai Wu ◽  
...  
Keyword(s):  
Power Consumption ◽  
Phase Change ◽  
Phase Change Memory ◽  
Multi Level ◽  
Ultralow Power ◽  
Change Memory

Simulation and Design of a Silicon Nanowire based Phase Change Memory Cell

2012 ◽  
Vol 1431 ◽  
Author(s):  
Ramin Banan Sadeghian ◽  
Yusuf Leblebici ◽  
Ali Shakouri
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Low Cost ◽  
Silicon Nanowire ◽  
Phase Change Memory ◽  
Random Access ◽  
Memory Cell ◽  
Oxide Thickness ◽  
Nanowire Diameter ◽  
Change Memory

ABSTRACTIn this work we present preliminary calculations and simulations to demonstrate feasibility of programming a nanoscale Phase Change Random Access Memory (PCRAM) cell by means of a silicon nanowire ballistic transistor (SNWBT). Memory cells based on ballistic transistors bear the advantage of having a small size and high-speed operation with low power requirements. A one-dimensional MOSFET model (FETToy) was used to estimate the output current of the nanowire as a function of its diameter. The gate oxide thickness was 1.5 nm, and the Fermi level at source was set to -0.32 eV. For the case of VDS = VGS = 1 V, when the nanowire diameter was increased from 1 to 60 nm, the output power density dropped from 109 to 106 W cm-2 , while the current increased from 20 to 90 μA. Finite element electro-thermal analysis were carried out on a segmented cylindrical phase-change memory cell made of Ge2Sb2Te5 (GST) chalcogenide, connected in series to the SNWBT. The diameter of the combined device, d, and the aspect ratio of the GST region were selected so as to achieve optimum heating of the GST. With the assumption that the bulk thermal conductivity of GST does not change significantly at the nanoscale, it was shown that for d = 24 nm, a ‘reset’ programming current of ID = 80 μA can heat the GST up to its melting point. The results presented herein can help in the design of low cost, high speed, and radiation tolerant nanoscale PCRAM devices.

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