Chemical Vapor Deposition Growth of Vertical MoS2 Nanosheets on p-GaN Nanorods for Photodetector Application

2019 ◽  
Vol 11 (8) ◽  
pp. 8453-8460 ◽  
Author(s):  
Guofeng Yang ◽  
Yan Gu ◽  
Pengfei Yan ◽  
Jin Wang ◽  
Junjun Xue ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Mos2 Nanosheets ◽  
Chemical Vapor Deposition Growth

scholarly journals Improved Photoelectrochemical Performance of MoS2 through Morphology-Controlled Chemical Vapor Deposition Growth on Graphene

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1585
Author(s):  
Dong-Bum Seo ◽  
Tran Nam Trung ◽  
Sung-Su Bae ◽  
Eui-Tae Kim
Keyword(s):  
Chemical Vapor Deposition ◽  
Charge Transfer ◽  
Vapor Deposition ◽  
Graphene Layer ◽  
Chemical Vapor ◽  
Full Potential ◽  
Mos2 Nanosheets ◽  
Photoelectrochemical Performance ◽  
Chemical Vapor Deposition Growth ◽  
Vertically Aligned

The morphology of MoS2 nanostructures was manipulated from thin films to vertically aligned few-layer nanosheets on graphene, in a controllable and practical manner, using metalorganic chemical vapor deposition. The effects of graphene layer and MoS2 morphology on photoelectrochemical (PEC) performance were systematically studied on the basis of electronic structure and transitions, carrier dynamic behavior, and PEC measurements. The heterojunction quality of the graphene/vertical few-layer MoS2 nanosheets was ensured by low-temperature growth at 250−300 °C, resulting in significantly improved charge transfer properties. As a result, the PEC photocurrent density and photoconversion efficiency of the few-layer MoS2 nanosheets significantly increased upon the insertion of a graphene layer. Among the graphene/MoS2 samples, the few-layer MoS2 nanosheet samples exhibited shorter carrier lifetimes and smaller charge transfer resistances than the thin film samples, suggesting that vertically aligned nanosheets provide highly conductive edges as an efficient pathway for photo-generated carriers and have better electronic contact with graphene. In addition, the height of vertical MoS2 nanosheets on graphene should be controlled within the carrier diffusion length (~200 nm) to achieve the optimal PEC performance. These results can be utilized effectively to exploit the full potential of two-dimensional MoS2 for various PEC applications.

Chemical vapor deposition growth and characterization of AlGaN nanowires

2015 ◽  
Vol 32 (6) ◽  
pp. 638
Author(s):  
Xingmin Cai ◽  
Xiaoqiang Su ◽  
Fan Ye ◽  
Huan Wang ◽  
Guangxing Liang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth

Epitaxial mist chemical vapor deposition growth and characterization of Cu3N films on (0001)α-Al2O3 substrates

2020 ◽  
Vol 13 (7) ◽  
pp. 075505
Author(s):  
Tomohiro Yamaguchi ◽  
Hiroki Nagai ◽  
Takanori Kiguchi ◽  
Nao Wakabayashi ◽  
Takuto Igawa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Α Al2o3

Pre-Cracking and Plasma Enhanced Metalorganic Chemical Vapor Deposition Processes for Epitaxial Hg1−xCdxTe and HgTe-CdTe Superlattice Growth

1987 ◽  
Vol 102 ◽  
Author(s):  
P.-Y. Lu ◽  
L. M. Williams ◽  
C.-H. Wang ◽  
S. N. G. Chu ◽  
M. H. Ross
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Infrared Transmission ◽  
Chemical Vapor Deposition Growth ◽  
Deposition Processes ◽  
Cdznte Substrates ◽  
First Time ◽  
Metalorganic Chemical

ABSTRACTTwo low temperature metalorganic chemical vapor deposition growth techniques, the pre-cracking method and the plasma enhanced method, will be discussed. The pre-cracking technique enables one to grow high quality epitaxial Hg1−xCdxTe on CdTe or CdZnTe substrates at temperatures around 200–250°C. HgTe-CdTe superlattices with sharp interfaces have also been fabricated. Furthermore, for the first time, we have demonstrated that ternary Hg1−xCdTe compounds and HgTe-CdTe superlattices can be successfully grown by the plasma enhanced process at temperatures as low as 135 to 150°C. Material properties such as surface morphology, infrared transmission, Hall mobility, and interface sharpness will be presented.

Vertically aligned growth of small-diameter single-walled carbon nanotubes on flexible stainless steels by alcohol catalytic chemical vapor deposition with Ir catalyst on alumina buffer layer

2021 ◽  
Author(s):  
Shu KONDO ◽  
Daiki YAMAMOTO ◽  
Kamal Prasad Prasad Sharma ◽  
Yazid Yaakob ◽  
Takahiro SAIDA ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Small Diameter ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Chemical Vapor Deposition Growth ◽  
Catalytic Chemical Vapor Deposition ◽  
Single Walled Carbon ◽  
Vertically Aligned

Abstract We performed single-walled carbon nanotube (SWCNT) growth on flexible stainless-steel foils by applying alcohol catalytic chemical vapor deposition using an Ir catalyst with an alumina buffer layer. When the alumina thickness was 90 nm, vertically aligned SWCNTs with a thickness of 4.6 m were grown. In addition, Raman results showed that the diameters of most SWCNTs were distributed below 1.1 nm. Compared with conventional chemical vapor deposition growth where Si wafers are used as substrates, this method is more cost effective and easier to extend for mass production of small-diameter SWCNTs.

scholarly journals Low-Temperature Chemical Vapor Deposition Growth of MoS2 Nanodots and Their Raman and Photoluminescence Profiles

2021 ◽  
Vol 3 ◽  
Author(s):  
Larionette P. L. Mawlong ◽  
Ravi K. Biroju ◽  
P. K. Giri
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Flexible Substrate ◽  
Chemical Vapor ◽  
Structural Defects ◽  
Chemical Vapor Deposition Growth ◽  
Raman Modes

We report on the growth of an ordered array of MoS2 nanodots (lateral sizes in the range of ∼100–250 nm) by a thermal chemical vapor deposition (CVD) method directly onto SiO2 substrates at a relatively low substrate temperature (510–560°C). The temperature-dependent growth and evolution of MoS2 nanodots and the local environment of sulfur-induced structural defects and impurities were systematically investigated by field emission scanning electron microscopy, micro-Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS) techniques. At the substrate temperature of 560°C, we observed mostly few-layer MoS2, and at 510°C, multilayer MoS2 growth, as confirmed from the Raman line shape analysis. With reduced substrate temperature, the density of MoS2 nanodots decreases, and layer thickness increases. Raman studies show characteristic Raman modes of the crystalline MoS2 layer, along with two new Raman modes centered at ∼346 and ∼361 cm−1, which are associated with MoO2 and MoO3 phases, respectively. Room temperature photoluminescence (PL) studies revealed strong visible PL from MoS2 layers, which is strongly blue-shifted from the bulk MoS2 flakes. The strong visible emission centered at ∼ 658 nm signifies a free excitonic transition in the direct gap of single-layer MoS2. Position-dependent PL profiles show excellent uniformity of the MoS2 layers for samples grown at 540 and 560°C. These results are significant for the low-temperature CVD growth of a few-layer MoS2 dots with direct bandgap photoluminescence on a flexible substrate.

Role of Hydrogen in Graphene Chemical Vapor Deposition Growth on a Copper Surface

2014 ◽  
Vol 136 (8) ◽  
pp. 3040-3047 ◽  
Author(s):  
Xiuyun Zhang ◽  
Lu Wang ◽  
John Xin ◽  
Boris I. Yakobson ◽  
Feng Ding
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Copper Surface ◽  
Chemical Vapor Deposition Growth
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