Ultra-High-Speed Intense Pulsed-Light Irradiation Technique for High-Performance Zinc Oxynitride Thin-Film Transistors

2019 ◽  
Vol 11 (4) ◽  
pp. 4152-4158 ◽  
Author(s):  
Hyun-Jun Jeong ◽  
Hyun-Mo Lee ◽  
Chung-Hyeon Ryu ◽  
Eun-Jae Park ◽  
Ki-Lim Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Speed ◽  
High Performance ◽  
Intense Pulsed Light ◽  
Light Irradiation ◽  
Pulsed Light ◽  
Ultra High Speed

scholarly journals Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array

Micromachines ◽  
2020 ◽  
Vol 11 (5) ◽  
pp. 508 ◽  
Author(s):  
Hyun Jae Kim ◽  
Chul Jong Han ◽  
Byungwook Yoo ◽  
Jeongno Lee ◽  
Kimoon Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Annealing Process ◽  
Intense Pulsed Light ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Pulsed Light ◽  
Solution Processed ◽  
Rapid Annealing

We report on the effects of the intense pulsed light (IPL) rapid annealing process and back-channel passivation on the solution-processed In-Ga-Zn-O (IGZO) thin film transistors (TFTs) array. To improve the electrical properties, stability and uniformity of IGZO TFTs, the oxide channel layers were treated by IPL at atmospheric ambient and passivated by photo-sensitive polyimide (PSPI). When we treated the IGZO channel layer by the IPL rapid annealing process, saturation field effect mobility and subthreshold swing (S.S.) were improved. And, to protect the back-channel of oxide channel layers from oxygen and water molecules, we passivated TFT devices with photo-sensitive polyimide. The IGZO TFTs on glass substrate treated by IPL rapid annealing without PSPI passivation showed the field effect mobility (μFE) of 1.54 cm2/Vs and subthreshold swing (S.S.) of 0.708 V/decade. The PSPI-passivated IGZO TFTs showed higher μFE of 2.17 cm2/Vs than that of device without passivation process and improved S.S. of 0.225 V/decade. By using a simple and fast intense pulsed light treatment with an appropriate back-channel passivation layer, we could improve the electrical characteristics and hysteresis of IGZO-TFTs. We also showed the improved uniformity of electrical characteristics for IGZO TFT devices in the area of 10 × 40 mm2. Since this IPL rapid annealing process could be performed at a low temperature, it can be applied to flexible electronics on plastic substrates in the near future.

ZnO NANOCRYSTALLINE HIGH PERFORMANCE THIN FILM TRANSISTORS

2011 ◽  
Vol 20 (01) ◽  
pp. 171-182 ◽  
Author(s):  
BURHAN BAYRAKTAROGLU ◽  
KEVIN LEEDY ◽  
ROBERT NEIDHARD
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Speed ◽  
High Performance ◽  
Gate Dielectric ◽  
Film Growth ◽  
Drain Current ◽  
Dielectric Materials ◽  
High Resistivity ◽  
Zno Films

In this study, nc - ZnO films deposited in a Pulsed Laser Deposition (PLD) system at various temperatures were used to fabricate high performance transistors. As determined by Transmission Electron Microscope (TEM) images, nc - ZnO films deposited at a temperature range of 25°C to 400°C were made of closely packed nanocolums showing strong orientation. The influences of film growth temperature and post growth annealing on device performance were investigated. Various gate dielectric materials, including SiO 2, Al 2 O 3, and HfO 2 were shown to be suitable for high performance device applications. Bottom-gate FETs fabricated on high resistivity (>2000 ohm-cm) Si substrates demonstrated record DC and high speed performance of any thin film transistors. Drain current on/off ratios better than 1012 and sub-threshold voltage swing values of less than 100mV/decade could be obtained. Devices with 2μm gate lengths produced exceptionally high current densities of >750mA/mm. Shorter gate length devices (LG=1.2μm) had current and power gain cut-off frequencies, f T and f max , of 2.9GHz and 10GHz, respectively.

High Performance Input Scanning Arrays Using Amorphous Silicon Photodiodesand Thin-Film Transistors

1992 ◽  
Vol 258 ◽  
Author(s):  
Richard L. Weisfield
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
High Speed ◽  
High Performance ◽  
Test Results ◽  
Large Area ◽  
Full Page ◽  
Hydrogenated Amorphous ◽  
Low Capacitance

ABSTRACTThe use of large area hydrogenated amorphous silicon (a-Si:H) technology has enabled compact, full page width scanners to be built inexpensively, and is now the dominant method for fabricating low-end facsimile machines. This technology has now been extended to scanners with considerably higher levels of performance. High speed, high resolution, full-width input scanning arrays have been developed using a-Si:H photodiodes and thin-film transistors (TFTs). A 12” long array has been designed to scan 3 colors at 400 spots per inch, and operates at speeds of up to 40 pages per minute, achieving a signal/noise ratio of 400:1 at intensities of 30 μWcm-2.The color scan array is made using 3 rows of a-Si:H photodiodes, one per color, addressed by TFTs which share sets of common data lines. The data lines are arranged in a low capacitance non-crossing configuration which allows the scanner to achieve high responsivity with low crosstalk. The data lines are connected to a number of readout chips, each of which amplifies and multiplexes the photosignals onto a single video output line. Optoelectronic test results and images obtained from this device will be presented. These results indicate that high quality color images can be obtained from a-Si:H scanners, and that the present scanner is more limited by the speed of the readout chips than by the a-Si: H devices themselves.

A Proposal of High Performance Organic Thin Film Transistors

2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

Organic Electronics

2020 ◽  
Author(s):  
Stephen R. Forrest
Keyword(s):  
Thin Film ◽  
Organic Electronics ◽  
Thin Film Transistors ◽  
High Performance ◽  
Electronic Devices ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Organic Thin Film ◽  
Graduate Studies ◽  
Organic Light

Organic electronics is a platform for very low cost and high performance optoelectronic and electronic devices that cover large areas, are lightweight, and can be both flexible and conformable to irregularly shaped surfaces such as foldable smart phones. Organics are at the core of the global organic light emitting device (OLED) display industry, and also having use in efficient lighting sources, solar cells, and thin film transistors useful in medical and a range of other sensing, memory and logic applications. This book introduces the theoretical foundations and practical realization of devices in organic electronics. It is a product of both one and two semester courses that have been taught over a period of more than two decades. The target audiences are students at all levels of graduate studies, highly motivated senior undergraduates, and practicing engineers and scientists. The book is divided into two sections. Part I, Foundations, lays down the fundamental principles of the field of organic electronics. It is assumed that the reader has an elementary knowledge of quantum mechanics, and electricity and magnetism. Background knowledge of organic chemistry is not required. Part II, Applications, focuses on organic electronic devices. It begins with a discussion of organic thin film deposition and patterning, followed by chapters on organic light emitters, detectors, and thin film transistors. The last chapter describes several devices and phenomena that are not covered in the previous chapters, since they lie outside of the current mainstream of the field, but are nevertheless important.

scholarly journals High-performance organic semiconductors for thin-film transistors based on 2,7-divinyl[1]benzothieno[3,2-b]benzothiophene

2008 ◽  
Vol 18 (39) ◽  
pp. 4698 ◽  
Author(s):  
Myoung-Chul Um ◽  
Jeonghun Kwak ◽  
Jung-Pyo Hong ◽  
Jihoon Kang ◽  
Do Yeung Yoon ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Thin Film Transistors ◽  
High Performance
Sign in / Sign up

Export Citation Format

Share Document