Dependence of h-BN Film Thickness as Grown on Nickel Single-Crystal Substrates of Different Orientations

2018 ◽  
Vol 10 (51) ◽  
pp. 44862-44870 ◽  
Author(s):  
Harry Chou ◽  
Sarmita Majumder ◽  
Anupam Roy ◽  
Massimo Catalano ◽  
Pingping Zhuang ◽  
...  
2009 ◽  
Vol 31 (11-12) ◽  
pp. 1709-1718 ◽  
Author(s):  
W.J. Evans ◽  
R. Lancaster ◽  
A. Steele ◽  
M. Whittaker ◽  
N. Jones

1970 ◽  
Vol 41 (13) ◽  
pp. 5163-5164 ◽  
Author(s):  
M. C. Martin

1974 ◽  
Vol 60 (11) ◽  
pp. 4528-4540 ◽  
Author(s):  
K. Christmann ◽  
O. Schober ◽  
G. Ertl ◽  
M. Neumann

2002 ◽  
Vol 4 (11-12) ◽  
pp. 1521-1527 ◽  
Author(s):  
Takanori Kawano ◽  
Masayuki Kawaguchi ◽  
Yuji Okamoto ◽  
Hiroyuki Enomoto ◽  
Hiroyuki Bando

1990 ◽  
Vol 5 (8) ◽  
pp. 1605-1611 ◽  
Author(s):  
S. J. Golden ◽  
H. Isotalo ◽  
M. Lanham ◽  
J. Mayer ◽  
F. F. Lange ◽  
...  

Superconducting YBaCuO thin films have been fabricated on single-crystal MgO by the spray-pyrolysis of nitrate precursors. The effects on the superconductive behavior of processing parameters such as time and temperature of heat treatment and film thickness were investigated. The superconductive behavior was found to be strongly dependent on film thickness. Films of thickness 1 μm were found to have a Tc of 67 K while thinner films showed appreciably degraded properties. Transmission electron microscopy studies have shown that the heat treatments necessary for the formation of the superconductive phase (for example, 950 °C for 30 min) also cause a substantial degree of film-substrate interdiffusion. Diffusion distances for Cu in the MgO substrate and Mg in the film were found to be sufficient to explain the degradation of the superconductive behavior in films of thickness 0.5 μm and 0.2 μm. From the concentration profiles obtained by EDS analysis diffusion coefficients at 950 °C for Mg into the YBaCuO thin film and for Cu into the MgO substrate were evaluated as 3 × 10−19 m2/s and 1 × 10−17 m2/s, respectively.


1984 ◽  
Vol 37 ◽  
Author(s):  
A. F. Marshall ◽  
F. Hellman ◽  
B. Oh

AbstractFilms of Nb3Sn vapor deposited at low rates and high temperatures on (1102) sapphire form an epitaxial <100> single crystal matrix with a domain structure of misoriented regions bounded by low-angle dislocation boundaries. Nucleation of other orientations at the interface result in a highly oriented but polycrystalline film through approximately the first thousand Angstroms of film thickness. After this point random orientations become overgrown by epitaxial <100> regions. At slightly lower temperatures many small <100> grains with a second epitaxial relationship also nucleate at the interface. These rotated grains persist through greater thicknesses than random orientations. The misorientation defect structure of the single crystal matrix is analyzed by transmission electron microscopy.


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