Field-Effect Charge Transport in Doped Polymer Semiconductor–Insulator Alternating Bulk Junctions with Ultrathin Transport Layers

2018 ◽  
Vol 10 (45) ◽  
pp. 39091-39099 ◽  
Author(s):  
Yupeng Hu ◽  
Laju Bu ◽  
Xudong Wang ◽  
Ling Zhou ◽  
Guanghao Lu
Keyword(s):  
Charge Transport ◽  
Field Effect ◽  
Polymer Semiconductor ◽  
Doped Polymer

Tunable charge-transport polarity in thienothiophene–bisoxoindolinylidene-benzodifurandione copolymers for high-performance field-effect transistors

2021 ◽  
Author(s):  
Zhihui Chen ◽  
Jianyao Huang ◽  
Weifeng Zhang ◽  
Yankai Zhou ◽  
Xuyang Wei ◽  
...  
Keyword(s):  
Charge Transport ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Structural Parameters ◽  
Semiconducting Polymers ◽  
Trade Off ◽  
Polymer Semiconductor ◽  
And Performance

N-type semiconducting polymers are important materials for modern electronics but limited in variety and performance. To design a new n-type polymer semiconductor requires a judicious trade-off between structural parameters involving...

Balanced Ambipolar Charge Transport in Phenacene/Perylene Heterojunction-Based Organic Field-Effect Transistors

2021 ◽  
Vol 13 (7) ◽  
pp. 8631-8642
Author(s):  
Tomoya Taguchi ◽  
Fabio Chiarella ◽  
Mario Barra ◽  
Federico Chianese ◽  
Yoshihiro Kubozono ◽  
...  
Keyword(s):  
Charge Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

Linking polythiophene chains with vinylene-bridges: A way to improve charge transport in polymer field-effect transistors

2009 ◽  
Vol 47 (5) ◽  
pp. 1381-1392 ◽  
Author(s):  
Kun Lu ◽  
Xiangnan Sun ◽  
Yunqi Liu ◽  
Chongan Di ◽  
Hongxia Xi ◽  
...  
Keyword(s):  
Charge Transport ◽  
Field Effect ◽  
Field Effect Transistors

Changes in major charge transport by molecular spatial orientation in graphene channel field effect transistors

2013 ◽  
Vol 49 (56) ◽  
pp. 6289 ◽  
Author(s):  
Misook Min ◽  
Sohyeon Seo ◽  
Junghyun Lee ◽  
Sae Mi Lee ◽  
Eunhee Hwang ◽  
...  
Keyword(s):  
Charge Transport ◽  
Spatial Orientation ◽  
Field Effect ◽  
Field Effect Transistors

On Razors Edge: Influence of the Source Insulator Edge on the Charge Transport of Vertical Organic Field Effect Transistors

MRS Advances ◽  
2017 ◽  
Vol 2 (23) ◽  
pp. 1249-1257 ◽  
Author(s):  
F. Michael Sawatzki ◽  
Alrun A. Hauke ◽  
Duy Hai Doan ◽  
Peter Formanek ◽  
Daniel Kasemann ◽  
...  
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Organic Solar Cells ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Electrical Power ◽  
Strong Impact ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

ABSTRACTTo benefit from the many advantages of organic semiconductors like flexibility, transparency, and small thickness, electronic devices should be entirely made from organic materials. This means, additionally to organic LEDs, organic solar cells, and organic sensors, we need organic transistors to amplify, process, and control signals and electrical power. The standard lateral organic field effect transistor (OFET) does not offer the necessary performance for many of these applications. One promising candidate for solving this problem is the vertical organic field effect transistor (VOFET). In addition to the altered structure of the electrodes, the VOFET has one additional part compared to the OFET – the source-insulator. However, the influence of the used material, the size, and geometry of this insulator on the behavior of the transistor has not yet been examined. We investigate key-parameters of the VOFET with different source insulator materials and geometries. We also present transmission electron microscopy (TEM) images of the edge area. Additionally, we investigate the charge transport in such devices using drift-diffusion simulations and the concept of a vertical organic light emitting transistor (VOLET). The VOLET is a VOFET with an embedded OLED. It allows the tracking of the local current density by measuring the light intensity distribution.We show that the insulator material and thickness only have a small influence on the performance, while there is a strong impact by the insulator geometry – mainly the overlap of the insulator into the channel. By tuning this overlap, on/off-ratios of 9x105 without contact doping are possible.

The Maxwell-Wagner model for charge transport in ambipolar organic field-effect transistors: The role of zero-potential position

2012 ◽  
Vol 101 (24) ◽  
pp. 243302 ◽  
Author(s):  
Yasuhiro Mashiko ◽  
Dai Taguchi ◽  
Martin Weis ◽  
Takaaki Manaka ◽  
Mitsumasa Iwamoto
Keyword(s):  
Charge Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Wagner Model ◽  
Zero Potential

Effect of the length of a symmetric branched side chain on charge transport in thienoisoindigo-based polymer field-effect transistors

2019 ◽  
Vol 65 ◽  
pp. 251-258 ◽  
Author(s):  
Michael Ruby Raj ◽  
Yebyeol Kim ◽  
Chan Eon Park ◽  
Tae Kyu An ◽  
Taiho Park
Keyword(s):  
Charge Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Side Chain

Microstructure engineering of polymer semiconductor thin films for high-performance field-effect transistors using a bi-component processing solution

2017 ◽  
Vol 5 (14) ◽  
pp. 3568-3578 ◽  
Author(s):  
Dong Gao ◽  
Zhihui Chen ◽  
Jianyao Huang ◽  
Weifeng Zhang ◽  
Congyuan Wei ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Semiconductor Thin Films ◽  
Polymer Semiconductor ◽  
Processing Solution

The performance of polymer field-effect transistors was enhanced by microstructure engineering through the use of a bi-component solvent.

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