Vertical-Tunnel Field-Effect Transistor Based on a Silicon–MoS2 Three-Dimensional–Two-Dimensional Heterostructure

Gwang Hyuk Shin; Bondae Koo; Hamin Park; Youngjun Woo; Jae Eun Lee; Sung-Yool Choi

doi:10.1021/acsami.8b11396

Vertical-Tunnel Field-Effect Transistor Based on a Silicon–MoS2 Three-Dimensional–Two-Dimensional Heterostructure

ACS Applied Materials & Interfaces ◽

10.1021/acsami.8b11396 ◽

2018 ◽

Vol 10 (46) ◽

pp. 40212-40218 ◽

Cited By ~ 9

Author(s):

Gwang Hyuk Shin ◽

Bondae Koo ◽

Hamin Park ◽

Youngjun Woo ◽

Jae Eun Lee ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Two Dimensional ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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A dual gate material tunnel field effect transistor model incorporating two‐dimensional Poisson and Schrodinger wave equations

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2933 ◽

2021 ◽

Author(s):

Sadhana Subhadarshini Mohanty ◽

Pradipta Dutta ◽

Jitendra Kumar Das

Keyword(s):

Field Effect ◽

Wave Equations ◽

Field Effect Transistor ◽

Two Dimensional ◽

Dual Gate ◽

Transistor Model ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Two-dimensional (2D) analytical investigation of an n-type junctionless gate-all-around tunnel field-effect transistor (JL GAA TFET)

Journal of Computational Electronics ◽

10.1007/s10825-018-1151-7 ◽

2018 ◽

Vol 17 (2) ◽

pp. 713-723 ◽

Cited By ~ 1

Author(s):

Ajay ◽

Rakhi Narang ◽

Manoj Saxena ◽

Mridula Gupta

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Analytical Investigation ◽

Two Dimensional ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Two-dimensional model of a heterojunction silicon-on-insulator tunnel field effect transistor

Superlattices and Microstructures ◽

10.1016/j.spmi.2015.12.013 ◽

2016 ◽

Vol 90 ◽

pp. 176-183 ◽

Cited By ~ 10

Author(s):

Sweta Chander ◽

S. Baishya

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Silicon On Insulator ◽

Two Dimensional ◽

Dimensional Model ◽

Two Dimensional Model ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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A Two-Dimensional Analytical Model for Tunnel Field Effect Transistor and Its Applications

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.044303 ◽

2013 ◽

Vol 52 (4R) ◽

pp. 044303 ◽

Cited By ~ 23

Author(s):

Ning Cui ◽

Libin Liu ◽

Qian Xie ◽

Zhen Tan ◽

Renrong Liang ◽

...

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Two Dimensional ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Influence of corner effect on performance of three-dimensional tunnel field-effect transistor

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.064304 ◽

2014 ◽

Vol 53 (6) ◽

pp. 064304

Author(s):

Libin Liu ◽

Renrong Liang ◽

Lianfeng Zhao ◽

Jing Wang ◽

Jun Xu

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Corner Effect ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Two‐dimensional potential, electric field and drain current model of source pocket hetero gate dielectric triple work function tunnel field‐effect transistor

Micro & Nano Letters ◽

10.1049/mnl.2016.0351 ◽

2017 ◽

Vol 12 (1) ◽

pp. 11-16 ◽

Cited By ~ 1

Author(s):

Dheeraj Sharma ◽

Bhagwan Ram Raad ◽

Dharmendra Singh Yadav ◽

Pravin Kondekar ◽

Kaushal Nigam

Keyword(s):

Electric Field ◽

Work Function ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Current Model ◽

Drain Current ◽

Two Dimensional ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Two-dimensional analytical model for hetero-junction double-gate tunnel field-effect transistor with a stacked gate-oxide structure

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.054201 ◽

2017 ◽

Vol 56 (5) ◽

pp. 054201 ◽

Cited By ~ 3

Author(s):

Hui Fang Xu ◽

Bang Gui Guan

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Oxide ◽

Double Gate ◽

Two Dimensional ◽

Oxide Structure ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Magneto-resistance oscillations and the transition from three-dimensional to two-dimensional conduction in a gallium arsenide field effect transistor at low temperatures

Journal of Physics C Solid State Physics ◽

10.1088/0022-3719/15/3/004 ◽

1982 ◽

Vol 15 (3) ◽

pp. L21-L30 ◽

Cited By ~ 44

Author(s):

D A Poole ◽

M Pepper ◽

K -F Berggren ◽

G Hill ◽

H W Myron

Keyword(s):

Gallium Arsenide ◽

Low Temperatures ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Two Dimensional ◽

Effect Transistor ◽

Magneto Resistance

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Two Dimensional Modeling of III-V Heterojunction Gate All Around Tunnel Field Effect Transistor

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.9(1).01030 ◽

2017 ◽

Vol 9 (1) ◽

pp. 01030-1-01030-4 ◽

Cited By ~ 1

Author(s):

Manjula Vijh ◽

◽

R. S. Gupta ◽

Sujata Pandey ◽

◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Two Dimensional ◽

Dimensional Modeling ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Two dimensional analytical model for a negative capacitance double gate tunnel field effect transistor with ferroelectric gate dielectric

Journal of Semiconductors ◽

10.1088/1674-4926/39/10/104004 ◽

2018 ◽

Vol 39 (10) ◽

pp. 104004

Author(s):

Huifang Xu

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Negative Capacitance ◽

Double Gate ◽

Two Dimensional ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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