High-Vacuum Particulate-Free Deposition of Wafer-Scale Mono-, Bi-, and Trilayer Molybdenum Disulfide with Superior Transport Properties

2018 ◽  
Vol 10 (39) ◽  
pp. 33457-33463 ◽  
Author(s):  
Kortney Almeida ◽  
Michelle Wurch ◽  
Adane Geremew ◽  
Koichi Yamaguchi ◽  
Thomas A. Empante ◽  
...  
Keyword(s):  
Transport Properties ◽  
Molybdenum Disulfide ◽  
High Vacuum ◽  
Wafer Scale

Shadow Edge Lithography and Application to Nanofluidics

2010 ◽  
Author(s):  
Woon-Hong Yeo ◽  
Dong Won Lee ◽  
Kyong-Hoon Lee ◽  
Jae-Hyun Chung
Keyword(s):  
Fuel Cells ◽  
High Resolution ◽  
High Throughput ◽  
Single Molecule ◽  
Chemical Sensors ◽  
Geometric Distribution ◽  
High Vacuum ◽  
Vacuum Evaporation ◽  
Wafer Scale ◽  
Nanoscale Patterns

Many upcoming applications, such as nanoelectronic circuitry, single-molecule based chips, nanofluidics, chemical sensors, and fuel cells, require large arrays of nanochannels and nanowires. To commercialize such nanostructured devices, a high resolution and high throughput patterning method is essential. For this purpose, we developed the shadow edge lithography (SEL) as a wafer-scale, high-throughput nanomanufacturing method [1]. In the proposed method, the shadow effect in the high-vacuum evaporation was theoretically analyzed to predict the geometric distribution of the nanoscale patterns [2]. In experiment, nanoscale patterns were created by the shadow of aluminum (Al) edges that were prepatterned using a conventional microfabrication method.

Transport Properties of a Molybdenum Disulfide and Carbon Dot Nanohybrid Transistor and Its Applications as a Hg2+ Aptasensor

2020 ◽  
Vol 2 (3) ◽  
pp. 635-645 ◽  
Author(s):  
Samira Mansouri Majd ◽  
Foad Ghasemi ◽  
Abdollah Salimi ◽  
Tsun-Kong Sham
Keyword(s):  
Transport Properties ◽  
Molybdenum Disulfide ◽  
Carbon Dot

Shadow Edge Lithography for Wafer-Scale Nanofabrication

2007 ◽  
Author(s):  
John Guofeng Bai ◽  
Jae-Hyun Chung
Keyword(s):  
High Vacuum ◽  
High Yield ◽  
Robust Method ◽  
Virtual Source ◽  
Ultraviolet Lithography ◽  
Wafer Scale ◽  
Shadow Effect ◽  
Etching Mask ◽  
Nanoscale Patterns ◽  
20 Nm

We propose shadow edge lithography (SEL) as a wafer-scale nanofabrication method. The shadow effect of “line-ofsight” in high-vacuum evaporation is analyzed theoretically to predict the geometric distributions of the fabricated nanoscale gaps. In the experiment, nanoscale gap patterns are created by the shadow of Al edges which are prepatterned using e-beam evaporation and the conventional ultraviolet lithography. Feasibility of the SEL is demonstrated by the fabrication of nanogaps having the width ranging from 15 to 100 nm on 4-inch Si wafers. Furthermore, by using the height differences in the prepatterned Al edges to compensate the geometric distributions of the shadow effect, it is demonstrated that the uniformity tolerance in the nanogap width can be ±1 nm or ±5% across the 4-inch Si wafers at a resolution down to 20 nm. The experimental results agree well with the theoretical prediction considering the virtual source during the e-beam evaporation. Upon the nanogap fabrication, arrays of nanochannels are obtained by reactive ion etching (RIE) using the evaporated Al layers as the etching mask. Our results show that that the evaporated Al layers can be used as the RIE mask to transfer the nanoscale patterns with a high yield and throughput. Thus, the SEL provides a robust method for wafer-scale fabrication especially for sub 50-nm structures.

The behavior of molybdenum disulfide based solid film lubricants during friction tests under high vacuum

1969 ◽  
Vol 5 (5) ◽  
pp. 369-371
Author(s):  
I. M. Lyubarskii ◽  
L. N. Sentyurikhina ◽  
Z. S. Rubtsova ◽  
V. F. Udovenko ◽  
G. V. Kurilov
Keyword(s):  
Molybdenum Disulfide ◽  
High Vacuum ◽  
Solid Film

Electrical Transport Properties of Polycrystalline Monolayer Molybdenum Disulfide

ACS Nano ◽  
2014 ◽  
Vol 8 (8) ◽  
pp. 7930-7937 ◽  
Author(s):  
Sina Najmaei ◽  
Matin Amani ◽  
Matthew L. Chin ◽  
Zheng Liu ◽  
A. Glen Birdwell ◽  
...  
Keyword(s):  
Transport Properties ◽  
Molybdenum Disulfide ◽  
Electrical Transport ◽  
Electrical Transport Properties

Ambient Air Effects on Electrical Transport Properties of ZnO Nanorod Transistors

2008 ◽  
Vol 8 (11) ◽  
pp. 5929-5933 ◽  
Author(s):  
Jae Young Park ◽  
Ju-Jin Kim ◽  
Sang Sub Kim
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
High Vacuum ◽  
Ambient Air ◽  
Air Pressure ◽  
Zno Nanorod ◽  
Electrical Transport Properties ◽  
Large Shift ◽  
Oh Groups ◽  
Drain Electrode

ZnO nanorod (NR) transistors were fabricated in a back-gated structure, and their electrical transport properties were investigated as a function of air pressure. A large shift (19.4 V) of threshold voltage Vt, g toward negative gate bias is observed as the air pressure decreases to 9.06 × 10−4 Pa. The shift of Vt, g and the change in the flowing current between the source and drain electrode with changing the air pressure are fully reversible. The adsorption and desorption of oxygen molecules and/or OH groups in air are likely to be responsible for the reversibility. Most importantly, the electron concentration and the flowing current rapidly change only in a vacuum regime less than a certain pressure as likely as 1.33 × 10−1 Pa. In contrast, in the low vacuum regime (>1.33 × 10−1 Pa) ZnO NR transistors are insensitive to the change of air pressure. This observation indicates that nanosized vacuum sensors based on ZnO NR transistors will be effective only in the high vacuum regime.

Wafer-scale homogeneity of transport properties in epitaxial graphene on SiC

Carbon ◽  
2015 ◽  
Vol 87 ◽  
pp. 409-414 ◽  
Author(s):  
Tom Yager ◽  
Arseniy Lartsev ◽  
Rositsa Yakimova ◽  
Samuel Lara-Avila ◽  
Sergey Kubatkin
Keyword(s):  
Transport Properties ◽  
Epitaxial Graphene ◽  
Wafer Scale

Dual-gated field-effect transistors made from wafer-scale synthetic few-layer molybdenum disulfide

2014 ◽  
Author(s):  
A. Tarasov ◽  
P. M. Campbell ◽  
M.-Y. Tsai ◽  
Z. Hesabi ◽  
J. Feirer ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Wafer Scale
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