Phase-Separation-Induced Crystal Growth for Large-Grained Cu2ZnSn(S,Se)4 Thin Film

2018 ◽  
Vol 10 (41) ◽  
pp. 35069-35078 ◽  
Author(s):  
Lijian Huang ◽  
Song Wei ◽  
Daocheng Pan
Keyword(s):  
Thin Film ◽  
Phase Separation ◽  
Crystal Growth

scholarly journals Inside Back Cover: Monte Carlo Simulations of the Phase Separation of a Copolymer Blend in a Thin Film (ChemPhysChem 3/2015)

ChemPhysChem ◽  
2015 ◽  
Vol 16 (3) ◽  
pp. 691-691
Author(s):  
Zhexiao Wang ◽  
Jing Shao ◽  
Heng Pan ◽  
Xiaoshuang Feng ◽  
Peng Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Monte Carlo ◽  
Phase Separation ◽  
Monte Carlo Simulations ◽  
Back Cover ◽  
Copolymer Blend

Molecular Dynamics Studies of Surface Nucleation and Crystal Growth of Si on SiO2 Substrates

2005 ◽  
Vol 899 ◽  
Author(s):  
Byoung-Min Lee ◽  
Hong Koo Baik ◽  
Takahide Kuranaga ◽  
Shinji Munetoh ◽  
Teruaki Motooka
Keyword(s):  
Thin Film ◽  
Molecular Dynamics ◽  
Crystal Growth ◽  
Surface Energy ◽  
Md Simulations ◽  
Lower Surface ◽  
Surface Nucleation ◽  
Lower Surface Energy ◽  
Potential Parameters ◽  
Si Thin Film

AbstractMolecular dynamics (MD) simulations of atomistic processes of nucleation and crystal growth of silicon (Si) on SiO2 substrate have been performed using the Tersoff potential based on a combination of Langevin and Newton equations. A new set of potential parameters was used to calculate the interatomic forces of Si and oxygen (O) atoms. It was found that the (111) plane of the Si nuclei formed at the surface was predominantly parallel to the surface of MD cell. The values surface energy for (100), (110), and (111) planes of Si at 77 K were calculated to be 2.27, 1.52, and 1.20 J/m2, respectively. This result suggests that, the nucleation leads to a preferred (111) orientation in the poly-Si thin film at the surface, driven by the lower surface energy.

Phase separation in undercooled molten Pd80Si20: Part I

1999 ◽  
Vol 14 (9) ◽  
pp. 3653-3662 ◽  
Author(s):  
K. L. Lee ◽  
H. W. Kui
Keyword(s):  
Growth Rate ◽  
Phase Separation ◽  
Crystal Growth ◽  
Grain Refinement ◽  
Crystallization Temperature ◽  
Sharp Decrease ◽  
Nucleation And Growth ◽  
Crystal Growth Rate ◽  
Large Undercooling ◽  
Kinetic Crystallization

Three different kinds of morphology are found in undercooled Pd80Si20, and they dominate at different undercooling regimens ΔT, defined as ΔT = T1 – Tk, where T1 is the liquidus of Pd80Si20 and Tk is the kinetic crystallization temperature. In the small undercooling regimen, i.e., for ΔT ≤ 190 K, the microstructures are typically dendritic precipitation with a eutecticlike background. In the intermediate undercooling regimen, i.e., for 190 ≤ ΔT ≤ 220 K, spherical morphologies, which arise from nucleation and growth, are identified. In addition, Pd particles are found throughout an entire undercooled specimen. In the large undercooling regimen, i.e., for ΔT ≥ 220 K, a connected structure composed of two subnetworks is found. A sharp decrease in the dimension of the microstructures occurs from the intermediate to the large undercooling regimen. Although the crystalline phases in the intermediate and the large undercooling regimens are the same, the crystal growth rate is too slow to bring about the occurrence of grain refinement. Combining the morphologies observed in the three undercooling regimens and their crystallization behaviors, we conclude that phase separation takes place in undercooled molten Pd80Si20.

Organic thin film crystal growth for nonlinear optics: present methods and exploratory developments

2002 ◽  
Vol 3 (4) ◽  
pp. 449-462 ◽  
Author(s):  
Sabine Manetta ◽  
Marcel Ehrensperger ◽  
Christian Bosshard ◽  
Peter Günter
Keyword(s):  
Thin Film ◽  
Crystal Growth ◽  
Nonlinear Optics ◽  
Organic Thin Film

Mobile nanoparticles and their effect on phase separation dynamics in thin-film polymer blends

2004 ◽  
Vol 68 (2) ◽  
pp. 219-225 ◽  
Author(s):  
H.-J Chung ◽  
A Taubert ◽  
R. D Deshmukh ◽  
R. J Composto
Keyword(s):  
Thin Film ◽  
Phase Separation ◽  
Polymer Blends ◽  
Film Polymer

Crystal Growth of β-FeSi2 Thin Film on (100), (110) and (111) Plane of Si and Yittria-stabilized Zirconia Substrates

2006 ◽  
Vol 980 ◽  
Author(s):  
Kensuke Akiyama ◽  
Satoru Kaneko ◽  
Takanori Kiguchi ◽  
Takashi Suemasu ◽  
Takeshi Kimura ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Crystal Growth ◽  
Magnetron Sputtering ◽  
Iron Silicide ◽  
Rf Magnetron Sputtering ◽  
Single Element ◽  
Stabilized Zirconia ◽  
Crystalline Film ◽  
Anions And Cations

AbstractIron silicide thin films were prepared on silicon (Si) and yittria-stabilized zirconia (YSZ) substrates using RF magnetron sputtering and evaporation methods. Epitaxial b-FeSi2 thin films were grown on (100) and (111) planes of Si and YSZ substrates, while noncrystallized films were deposited on (110) plane of both Si and YSZ substrates. The epitaxial relationships between the b-FeSi2 and YSZ were the same as those between b-FeSi2 and Si, in the case of (100) and (111) planes. It is possible that epitaxial b-FeSi2 film can be grown when substrates and b-FeSi2 surfaces consist of either a single element or only cations, while the crystalline film was not shown when either substrate or b-FeSi2 surface consists of a mixture of anions and cations or iron and silicon.

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