Silicon/Perovskite Core–Shell Heterojunctions with Light-Trapping Effect for Sensitive Self-Driven Near-Infrared Photodetectors

2018 ◽  
Vol 10 (33) ◽  
pp. 27850-27857 ◽  
Author(s):  
Jia-Qin Liu ◽  
Yang Gao ◽  
Guo-An Wu ◽  
Xiao-Wei Tong ◽  
Chao Xie ◽  
...  
2018 ◽  
Vol 6 (26) ◽  
pp. 7077-7084 ◽  
Author(s):  
Ling Ning ◽  
Tianhao Jiang ◽  
Zhibin Shao ◽  
Ke Ding ◽  
Xiujuan Zhang ◽  
...  

High-performance ZnO–MoS2 core–shell nanopillar (NP) array-based photodetectors are fabricated by taking advantage of the light trapping effect of ZnO NP array.


Nano Energy ◽  
2019 ◽  
Vol 57 ◽  
pp. 57-65 ◽  
Author(s):  
Xinyuan Li ◽  
Muhammad Ahsan Iqbal ◽  
Meng Xu ◽  
Yi-Chi Wang ◽  
Hongzhi Wang ◽  
...  

2015 ◽  
Vol 40 (21) ◽  
pp. 4959 ◽  
Author(s):  
A-Ra Hong ◽  
Jungyoon Kim ◽  
Su Yeon Kim ◽  
Seong-Il Kim ◽  
Kwangyeol Lee ◽  
...  

RSC Advances ◽  
2015 ◽  
Vol 5 (51) ◽  
pp. 40989-40996 ◽  
Author(s):  
Ahmad Yazdani ◽  
Mahdi Ghazanfari ◽  
Fatemeh Johar

Spherical isotropic Fe3O4nanoparticles were coated with Ag-shell in order to investigate the possibility of trapping photons through plasmon or plasmonic energy transfer at the magnetic–plasmonic interface coupling structure of core/shell.


Nanoscale ◽  
2016 ◽  
Vol 8 (29) ◽  
pp. 14203-14212 ◽  
Author(s):  
N. Mishra ◽  
B. Mukherjee ◽  
G. Xing ◽  
S. Chakrabortty ◽  
A. Guchhait ◽  
...  

Nano Letters ◽  
2019 ◽  
Vol 19 (3) ◽  
pp. 2188-2188
Author(s):  
Chen Zhou ◽  
Xu-Tao Zhang ◽  
Kun Zheng ◽  
Ping-Ping Chen ◽  
Wei Lu ◽  
...  

Author(s):  
Yun Zhao ◽  
Xiaoqiang Feng ◽  
Menghan Zhao ◽  
Xiaohu Zheng ◽  
Zhiduo Liu ◽  
...  

Employing C3N QD-integrated single-crystal graphene, photodetectors exhibited a distinct photocurrent response at 1550 nm. The photocurrent map revealed that the fast response derive from C3N QDs that enhanced the local electric field near graphene.


2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Xiaomei Yao ◽  
Xutao Zhang ◽  
Tingting Kang ◽  
Zhiyong Song ◽  
Qiang Sun ◽  
...  

AbstractA simple fabrication of end-bonded contacts InAsSb NW (nanowire) array detector to weak light is demonstrated in this study. The detector is fabricated using InAsSb NW array grown by molecular beam epitaxy on GaAs substrate. The metal-induced gap states are induced by the end-bonded contact which suppresses the dark current at various temperatures. The existence of the interface dipole due to the interfacial gap states enhances the light excitation around the local field and thus upgrades the photoresponsivity and photodetectivity to the weak light. The light intensity of the infrared light source in this report is 14 nW/cm2 which is about 3 to 4 orders of magnitude less than the laser source. The responsivity of the detector has reached 28.57 A/W at room temperature with the light (945 nm) radiation, while the detectivity is 4.81 × 1011 cm·Hz1/2 W−1. Anomalous temperature-dependent performance emerges at the variable temperature experiments, and we discussed the detailed mechanism behind the nonlinear relationship between the photoresponse of the device and temperatures. Besides, the optoelectronic characteristics of the detector clarified that the light-trapping effect and photogating effect of the NWs can enhance the photoresponse to the weak light across ultraviolet to near-infrared. These results highlight the feasibility of the InAsSb NW array detector to the infrared weak light without a cooling system.


Sign in / Sign up

Export Citation Format

Share Document