Many-Body Effect and Device Performance Limit of Monolayer InSe

2018 ◽  
Vol 10 (27) ◽  
pp. 23344-23352 ◽  
Author(s):  
Yangyang Wang ◽  
Ruixiang Fei ◽  
Ruge Quhe ◽  
Jingzhen Li ◽  
Han Zhang ◽  
...  
Keyword(s):  
Device Performance ◽  
Many Body ◽  
Body Effect ◽  
Performance Limit

Many-body Effect, Carrier Mobility, and Device Performance of Hexagonal Arsenene and Antimonene

2017 ◽  
Vol 29 (5) ◽  
pp. 2191-2201 ◽  
Author(s):  
Yangyang Wang ◽  
Pu Huang ◽  
Meng Ye ◽  
Ruge Quhe ◽  
Yuanyuan Pan ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Device Performance ◽  
Many Body ◽  
Body Effect

Transport through several four-quantum-dot topological structures

2021 ◽  
pp. 2150393
Author(s):  
Qingshuang Zhi ◽  
Kongfa Chen ◽  
Zelong He
Keyword(s):  
Quantum Dot ◽  
Coupling Strength ◽  
Bound States ◽  
Resonance Peak ◽  
Coulomb Interactions ◽  
Many Body ◽  
Body Effect ◽  
Topological Structures ◽  
Resonance Band ◽  
Interdot Coupling

In this paper, several four-quantum-dot topological structures are designed. The influence of the interdot coupling strength and intradot Coulomb interactions on the conductance is discussed. The location of the anti-resonance band can be manipulated by tuning the interdot coupling strength, which suggests a physical scheme of an effective quantum switch. The Fano anti-resonance peak may evolve into a resonance peak. For the particular value of the interdot coupling strength, two Fano anti-resonances collapse and bound states in the continuum are formed. Moreover, many-body effect makes the number of anti-resonance bands increase. This study provides a theoretical basis for the design of quantum computing devices.

Device performance limit of monolayer SnSe2 MOSFET

Nano Research ◽  
2021 ◽  
Author(s):  
Hong Li ◽  
Jiakun Liang ◽  
Qida Wang ◽  
Fengbin Liu ◽  
Gang Zhou ◽  
...  
Keyword(s):  
Device Performance ◽  
Performance Limit

Gate-dependent spectral functions and many-body effect for a triple dot structure

2017 ◽  
Vol 109 ◽  
pp. 394-401 ◽  
Author(s):  
Yong-Chen Xiong ◽  
Wen-Lei Zhao ◽  
Shi-Jun Luo
Keyword(s):  
Many Body ◽  
Spectral Functions ◽  
Body Effect

Photoemission Study of K Doping on a Monolayer of C60 on Clean Si(001)-(2 × 1) Surface

1998 ◽  
Vol 05 (01) ◽  
pp. 101-104 ◽  
Author(s):  
Tun-Wen Pi ◽  
Le-Hong Hong ◽  
Rong-Tzong Wu ◽  
Chiu-Ping Cheng ◽  
May-Ho Ko
Keyword(s):  
Binding Energy ◽  
Work Function ◽  
Valence Band ◽  
Weak Interaction ◽  
Silicon Surface ◽  
Many Body ◽  
Body Effect ◽  
Charge Polarization ◽  
The Many ◽  
Photoemission Study

We present the first valence band photoemission study of a monolayer K x C 60 on a clean Si(001)-(2 × 1) surface. The monolayer C60 which shows weak interaction with the silicon surface reveals clear, but broadened, structures corresponding to bulk C 60. Upon K exposure, the work function drops rapidly due to charge polarization toward the Si surface, considerably affecting then the rate of the Lumo filling. Its centroid initially shown at 0.6 eV shifts to higher binding energy with higher concentration. Moreover, the LUMO always separates 1.5 ± 0.1 eV from the Homo. Features associated with the many-body effect do not appear in the spectra. The Fermi cutoff has never been observed, indicating the insulating nature of the K x C 60 surface.

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