Self-Healing Phase Change Salogels with Tunable Gelation Temperature

2018 ◽  
Vol 10 (17) ◽  
pp. 14786-14795 ◽  
Author(s):  
Parvin Karimineghlani ◽  
Anbazhagan Palanisamy ◽  
Svetlana A. Sukhishvili
Keyword(s):  
Phase Change ◽  
Self Healing ◽  
Gelation Temperature ◽  
Healing Phase

The Relationship between the Initial Gas Ratios and the Condensed Phase Composition in the CVD of BxC with BCl3-CH4-H2 Precursors

2011 ◽  
Vol 239-242 ◽  
pp. 1761-1765 ◽  
Author(s):  
Juan Li Deng ◽  
Lai Fei Cheng ◽  
Li Ning Gao ◽  
Ke He Su
Keyword(s):  
Condensed Phase ◽  
Molar Ratio ◽  
Ideal Condition ◽  
Deposition Condition ◽  
Self Healing ◽  
Rich Phase ◽  
Healing Phase ◽  
Temperature And Pressure ◽  
Rich Material ◽  
The Relationship

For the preparation of the self-healing phase BxC with BCl3-CH4-H2precursors, the production has been examined as a function of the initial gas ratios of BCl3/(BCl3+CH4) and H2/(BCl3+CH4) at given temperature and pressure. The results show that the composition of the condensed phase is quite sensitive to the molar ratio of BCl3/(BCl3+CH4) and H2/(BCl3+CH4). The ideal condition for the deposition of BxC is that the ratio of BCl3/(BCl3+CH4) is 0.8 and the H2/(BCl3+CH4) ratio ranges from 10 to 105.2. The carbon or boron-rich material is mainly controlled by the ratios of BCl3/(BCl3+CH4) and H2/(BCl3+CH4). The deposition condition of carbon-rich phase should be in low BCl3/(BCl3+CH4) (0.0~0.8) and H2/(BCl3+CH4) (10-2<102) ratios, whereas that of the boron-rich phase needs high BCl3/(BCl3+CH4) (0.8~1.0) and H2/(BCl3+CH4) (104~105) ratios.

Investigation of Phase Change Memory Confined Cell Endurance Using Transmission Electron Microscopy

2016 ◽  
Author(s):  
Yu Zhu ◽  
S. Kim ◽  
J. Gonsalves ◽  
M. Brightsky ◽  
N. Sosa ◽  
...  
Keyword(s):  
Phase Change ◽  
Healing Process ◽  
Phase Change Memory ◽  
Void Formation ◽  
Memory Cell ◽  
In Situ Tem ◽  
Self Healing ◽  
Tem Analysis ◽  
Transmission Electron ◽  
Change Memory

Abstract The endurance performance of a novel confined phase change memory cell with metallic nitride liner is investigated using a transmission electron microscope (TEM). Write endurance has been shown to be substantially improved by this new structure [1]. Memory cells that had been cycled up to 109 were cross-sectioned and studied using the TEM. A majority of the electrically observed endurance failure mechanisms were stuck-SET. Physical failure analysis showed the failed cell is always associated with large void formation and material segregation. In-situ TEM analysis was used to study the void formation, accumulation and movement, where the memory cell was simultaneously operated and imaged in the TEM. Also, an interesting self-healing process of the void was recorded during the set/reset operation.

scholarly journals Self-Healing of a Confined Phase Change Memory Device with a Metallic Surfactant Layer

2019 ◽  
Vol 25 (S2) ◽  
pp. 1870-1871
Author(s):  
Yujun Xie ◽  
W. Kim ◽  
Y. Kim ◽  
S. Kim ◽  
J. Gonsalves ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Device ◽  
Self Healing ◽  
Change Memory

scholarly journals Self-Healing of a Confined Phase Change Memory Device with a Metallic Surfactant Layer

2018 ◽  
Vol 30 (9) ◽  
pp. 1705587 ◽  
Author(s):  
Yujun Xie ◽  
Wanki Kim ◽  
Yerin Kim ◽  
Sangbum Kim ◽  
Jemima Gonsalves ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Device ◽  
Self Healing ◽  
Change Memory
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