Buried MoOx/Ag Electrode Enables High-Efficiency Organic/Silicon Heterojunction Solar Cells with a High Fill Factor

2018 ◽  
Vol 10 (16) ◽  
pp. 13767-13773 ◽  
Author(s):  
Zhouhui Xia ◽  
Peng Gao ◽  
Teng Sun ◽  
Haihua Wu ◽  
Yeshu Tan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
High Efficiency ◽  
Heterojunction Solar Cells ◽  
Organic Silicon ◽  
Ag Electrode ◽  
High Fill Factor ◽  
Silicon Heterojunction Solar Cells

Interface Engineering of High Efficiency Organic-Silicon Heterojunction Solar Cells

2015 ◽  
Vol 8 (1) ◽  
pp. 26-30 ◽  
Author(s):  
Lixia Yang ◽  
Yaoping Liu ◽  
Wei Chen ◽  
Yan Wang ◽  
Huili Liang ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Interface Engineering ◽  
Heterojunction Solar Cells ◽  
Organic Silicon ◽  
Silicon Heterojunction Solar Cells

scholarly journals Transparent-Conductive-Oxide-Free Front Contacts for High Efficiency Silicon Heterojunction Solar Cells

2020 ◽  
Author(s):  
Shenghao Li ◽  
Manuel Pomaska ◽  
Andreas Lambertz ◽  
Weiyuan Duan ◽  
Karsten Bittkau ◽  
...  
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Transparent Conductive Oxide ◽  
Ozone Treatment ◽  
Metal Interface ◽  
Heterojunction Solar Cells ◽  
Metal Diffusion ◽  
Silicon Heterojunction Solar Cells

Abstract In order to compensate the insufficient conductance of heterojunction thin films, transparent conductive oxides (TCO) have been used for decades in both-sides contacted crystalline silicon heterojunction (SHJ) solar cells to provide lateral conduction for efficient carrier collection. In this work, we substitute the TCO layers by utilizing the lateral conduction of c-Si absorber, thereby enabling a TCO-free design. A series resistance of 0.32 Ωcm2 and a fill factor of 80.7% were measured for a TCO-free back-junction SHJ solar cell with a conventional finger pitch of 1.8 mm, thereby proving that relying on lateral conduction in the c-Si bulk is compatible with low series resistances. Achieving high efficiencies in SHJ solar cells with TCO-free front contacts requires suppressing deterioration of the passivation quality induced by direct metal-a-Si:H contacts and in-diffusion of metal into the a-Si:H layer. We show that an ozone treatment at the a-Si:H/metal interface suppresses the metal diffusion and improves the passivation without increasing the contact resistivity. SHJ solar cells with TCO-free front contacts and ozone treatment achieve efficiencies of > 22%.

scholarly journals High-efficiency Silicon Heterojunction Solar Cells: A Review

ENERGYO ◽  
2018 ◽  
Author(s):  
Stefaan De Wolf ◽  
Antoine Descoeudres ◽  
Zachary C. Holman ◽  
Christophe Ballif
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Heterojunction Solar Cells ◽  
Silicon Heterojunction Solar Cells

Simulation of InAIN/Si Single-Heterojunction Solar Cells Using wxAMPS

2014 ◽  
Vol 665 ◽  
pp. 111-114 ◽  
Author(s):  
Ying Huang ◽  
Xiao Ming Shen ◽  
Xiao Feng Wei
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Indium Content ◽  
Open Circuit ◽  
Heterojunction Solar Cells ◽  
Si Solar Cells

In this paper, InAlN/Si single-heterojunction solar cells have been theoretically simulated based on wxAMPS software. The photovoltaic parameters, such as open circuit voltage, short circuit current, fill factor and conversion efficiency were investigated with changing the indium content and thickness of n-InAlN layer. Simulation results show that the optimum efficiency of InAlN/Si solar cells is 23.1% under AM 1.5G spectral illuminations, with the indium content and thickness of n-InAlN layer are 0.65 and 600nm, respectively. The simulation would contribute to design and fabricate high efficiency InAlN/Si solar cells in experiment.

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