Direct Effect of Dielectric Surface Energy on Carrier Transport in Organic Field-Effect Transistors

2018 ◽  
Vol 10 (18) ◽  
pp. 15943-15951 ◽  
Author(s):  
Shujun Zhou ◽  
Qingxin Tang ◽  
Hongkun Tian ◽  
Xiaoli Zhao ◽  
Yanhong Tong ◽  
...  
Keyword(s):  
Surface Energy ◽  
Direct Effect ◽  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistors ◽  
Dielectric Surface ◽  
Organic Field Effect Transistors

Heterogeneous Nucleation Promotes Carrier Transport in Solution-Processed Organic Field-Effect Transistors

2012 ◽  
Vol 23 (3) ◽  
pp. 291-297 ◽  
Author(s):  
Ruipeng Li ◽  
Hadayat Ullah Khan ◽  
Marcia M. Payne ◽  
Detlef-M. Smilgies ◽  
John E. Anthony ◽  
...  
Keyword(s):  
Heterogeneous Nucleation ◽  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Solution Processed

Extrinsic limiting factors of carrier transport in organic field-effect transistors

2008 ◽  
Vol 95 (1) ◽  
pp. 73-80 ◽  
Author(s):  
Masakazu Nakamura ◽  
Hirokazu Ohguri ◽  
Naoyuki Goto ◽  
Hiroshi Tomii ◽  
Mingsheng Xu ◽  
...  
Keyword(s):  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistors ◽  
Limiting Factors ◽  
Organic Field Effect Transistors

Interfacial Heterogeneity of Surface Energy in Organic Field-Effect Transistors

2011 ◽  
Vol 23 (8) ◽  
pp. 1009-1014 ◽  
Author(s):  
Xiangnan Sun ◽  
Yunqi Liu ◽  
Chong-an Di ◽  
Yugeng Wen ◽  
Yunlong Guo ◽  
...  
Keyword(s):  
Surface Energy ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

Organic field-effect transistors using liquid crystalline compound synthesized to enhance carrier-transport ability

2010 ◽  
Vol 160 (13-14) ◽  
pp. 1474-1478
Author(s):  
Norio Onojima ◽  
Iki Shintani ◽  
Shin-ichi Kitahara ◽  
Tsutomu Takahashi ◽  
Takamasa Kato ◽  
...  
Keyword(s):  
Field Effect ◽  
Liquid Crystalline ◽  
Carrier Transport ◽  
Field Effect Transistors ◽  
Crystalline Compound ◽  
Organic Field Effect Transistors ◽  
Liquid Crystalline Compound

Effect of dielectric surface passivation on organic field-effect transistors: spectral analysis of the density of trap-states

2021 ◽  
Vol 37 (1) ◽  
pp. 015015
Author(s):  
Yogesh Yadav ◽  
Samarendra Pratap Singh
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
Surface Passivation ◽  
Field Effect Transistors ◽  
Contact Potential Difference ◽  
Dielectric Surface ◽  
Trap States ◽  
Organic Field Effect Transistors ◽  
The Impact ◽  
Lower Contact

Abstract The semiconductor/dielectric interface is arguably the most important region in field-effect transistors. This article investigates the performance-enhancing effects of passivation of the dielectric surface by a self-assembled layer (SAM) of silanes on organic field-effect transistors. Apart from conventional figures of merit for the devices, the energetic distribution of the density of the in-gap trap-states (trap-DOS) and the contact resistance are evaluated using numerical methods. The investigation reveals that the surface passivation of the dielectric SiO2 has a dual effect on device operation. Firstly, it establishes quantitatively that the surface passivation leads to a significant reduction in the density of both shallow and deep traps in the organic semiconductor PBTTT-C14. This effect outweighs the impact of the SAM dipoles on the device turn-on. Secondly, the contact resistance gets lowered by a factor of more than 10 due to the improved top-surface morphology of the PBTTT-C14 thin film. The lower contact resistance in devices is corroborated by lower contact potential difference between PBTTT-C14 and gold, measured using scanning kelvin probe microscopy.

Sign in / Sign up

Export Citation Format

Share Document