High-Sensitivity and Low-Power Flexible Schottky Hydrogen Sensor Based on Silicon Nanomembrane

2018 ◽  
Vol 10 (15) ◽  
pp. 12870-12877 ◽  
Author(s):  
Minkyu Cho ◽  
Jeonghoon Yun ◽  
Donguk Kwon ◽  
Kyuyoung Kim ◽  
Inkyu Park
Keyword(s):  
Low Power ◽  
High Sensitivity ◽  
Hydrogen Sensor ◽  
Silicon Nanomembrane

Low Power and High Sensitivity MOSFET-Based Pressure Sensor

2012 ◽  
Vol 29 (8) ◽  
pp. 088501 ◽  
Author(s):  
Zhao-Hua Zhang ◽  
Tian-Ling Ren ◽  
Yan-Hong Zhang ◽  
Rui-Rui Han ◽  
Li-Tian Liu
Keyword(s):  
Low Power ◽  
Pressure Sensor ◽  
High Sensitivity

B- and P-Doped Si0.8Ge0.2 Thin Film Deposited by Helicon Sputtering for the Micro-Thermoelectric Gas Sensor

2006 ◽  
Vol 320 ◽  
pp. 99-102 ◽  
Author(s):  
Kazuki Tajima ◽  
Woosuck Shin ◽  
Maiko Nishibori ◽  
Norimitsu Murayama ◽  
Toshio Itoh ◽  
...  
Keyword(s):  
Thin Film ◽  
Hydrogen Oxidation ◽  
Exothermic Reaction ◽  
High Sensitivity ◽  
Hydrogen Sensor ◽  
Thermoelectric Effect ◽  
Boron Doped ◽  
Reliable Monitoring ◽  
Ppm Level ◽  
Pt Catalyzed

Micro-thermoelectric hydrogen sensor (micro-THS) with the combination of the thermoelectric effect of Si0.8Ge0.2 thin film and the Pt-catalyzed exothermic reaction of hydrogen oxidation was prepared by microfabrication process. In the viewpoint of high sensitivity of micro-THS, the thermoelectric properties of the Si0.8Ge0.2 thin film could be improved by optimizing carrier concentration using helicon sputtering with an advantage of easy doping control, and sensitivity of the device with this thin film was investigated. As the result, the boron-doped Si0.8Ge0.2 thin film is considered to be the better choice ensuring the reliable monitoring of hydrogen concentration down to ppm level.

5.9 GHz High Sensitivity Rectenna for Low Power Wireless Transmission Application

2017 ◽  
Author(s):  
Mariem Kanoun ◽  
David Cordeau ◽  
Jean-Marie Paillotl ◽  
Hassene Mnif ◽  
Mourad Loulou
Keyword(s):  
Low Power ◽  
High Sensitivity ◽  
Wireless Transmission

High-speed high-sensitivity low power photodetector with electron and hole charge plasma

2016 ◽  
pp. 21-46 ◽  
Author(s):  
Bahram Nabet ◽  
Pouya Dianat ◽  
Xia Zhao ◽  
Amro Anwar Seddik ◽  
Francisco Castro ◽  
...  
Keyword(s):  
Low Power ◽  
High Speed ◽  
High Sensitivity ◽  
Charge Plasma ◽  
Hole Charge

scholarly journals Highly Sensitive Diode-Based Micro-Pirani Vacuum Sensor with Low Power Consumption

Sensors ◽  
2019 ◽  
Vol 19 (1) ◽  
pp. 188 ◽  
Author(s):  
Debo Wei ◽  
Jianyu Fu ◽  
Ruiwen Liu ◽  
Ying Hou ◽  
Chao Liu ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Forward Bias ◽  
High Sensitivity ◽  
Bias Current ◽  
Low Power Consumption ◽  
Sensor Performance ◽  
Sensor Structure ◽  
Vacuum Sensor ◽  
The One

Micro-Pirani vacuum sensors usually operate at hundreds of microwatts, which limits their application in battery-powered sensor systems. This paper reports a diode-based, low power consumption micro-Pirani vacuum sensor that has high sensitivity. Optimizations to the micro-Pirani vacuum sensor were made regarding two aspects. On the one hand, a greater temperature coefficient was obtained without increasing power consumption by taking advantage of series diodes; on the other hand, the sensor structure and geometries were redesigned to enlarge temperature variation. After that, the sensor was fabricated and tested. Test results indicated that the dynamic vacuum pressure range of the sensor was from 10−1 to 104 Pa when the forward bias current was as low as 10 μA with a power consumption of 50 μW. Average sensitivity was up to 90 μV/Pa and the sensitivity of unit power consumption increased to 1.8 V/W/Pa. In addition, the sensor could also work at a greater forward bias current for better sensor performance.

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