Improving Charge Injection via a Blade-Coating Molybdenum Oxide Layer: Toward High-Performance Large-Area Quantum-Dot Light-Emitting Diodes

2018 ◽  
Vol 10 (9) ◽  
pp. 8258-8264 ◽  
Author(s):  
Qunying Zeng ◽  
Zhongwei Xu ◽  
Congxiu Zheng ◽  
Yang Liu ◽  
Wei Chen ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Oxide Layer ◽  
Molybdenum Oxide ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Charge Injection ◽  
Large Area ◽  
Light Emitting ◽  
Blade Coating

High‐Performance Blue Quantum Dot Light‐Emitting Diodes with Balanced Charge Injection

2019 ◽  
Vol 5 (4) ◽  
pp. 1800794 ◽  
Author(s):  
Tai Cheng ◽  
Fuzhi Wang ◽  
Wenda Sun ◽  
Zhibin Wang ◽  
Jin Zhang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Charge Injection ◽  
Light Emitting

scholarly journals Optimization of Quantum Dot Thin Films using Electrohydrodynamic Jet Spraying for Solution-Processed Quantum Dot Light-Emitting Diodes

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Tuan Canh Nguyen ◽  
Thi Thu Thuy Can ◽  
Woon-Seop Choi
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Large Scale ◽  
Light Emitting Diodes ◽  
Good Method ◽  
Large Area ◽  
Solution Processed ◽  
Light Emitting ◽  
Line Method ◽  
Straight Line

Abstract The electrohydrodynamic (EHD) jet spraying process is a good method for making quantum dot (QD) layers in light-emitting diodes (LEDs). However, controlling the morphology and large-scale fabrication of the QD layers are critical for realizing all-solution-processed QD-LEDs with high performance. Three spraying techniques were used with the EHD jet spraying technique: a big circular film method, a spiral-line method, and a straight-line method. These techniques were used to obtain QD films with good uniformity. The straight-line spray showed the most promise to obtain a uniform QD layer with large area, and QD-LEDs made with this method showed better performance with a low turn-on voltage of 3.0 V, a luminance of 7801 cd/m2, and a maximum current efficiency of 2.93 cd/A.

High Performance Inkjet‐Printed Quantum‐Dot Light‐Emitting Diodes with High Operational Stability

2021 ◽  
pp. 2101069
Author(s):  
Siqi Jia ◽  
Haodong Tang ◽  
Jingrui Ma ◽  
Shihao Ding ◽  
Xiangwei Qu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Operational Stability ◽  
Light Emitting

P-93: High Performance of Quantum Dot Based Light Emitting Diodes Optimized by Graphene Sheets

2016 ◽  
Vol 47 (1) ◽  
pp. 1472-1475 ◽  
Author(s):  
Wei Chen ◽  
Junjie Hao ◽  
Rui Lu ◽  
Lei Yang ◽  
Yiwen Li ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Graphene Sheets ◽  
Light Emitting

scholarly journals High-performance large-area quasi-2D perovskite light-emitting diodes

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Changjiu Sun ◽  
Yuanzhi Jiang ◽  
Minghuan Cui ◽  
Lu Qiao ◽  
Junli Wei ◽  
...  
Keyword(s):  
High Performance ◽  
Light Emitting Diodes ◽  
Intermediate Phase ◽  
Formation Enthalpy ◽  
Phase Segregation ◽  
Phase Changes ◽  
Large Area ◽  
High Brightness ◽  
Light Emitting ◽  
Performance Decline

AbstractSerious performance decline arose for perovskite light-emitting diodes (PeLEDs) once the active area was enlarged. Here we investigate the failure mechanism of the widespread active film fabrication method; and ascribe severe phase-segregation to be the reason. We thereby introduce L-Norvaline to construct a COO−-coordinated intermediate phase with low formation enthalpy. The new intermediate phase changes the crystallization pathway, thereby suppressing the phase-segregation. Accordingly, high-quality large-area quasi-2D films with desirable properties are obtained. Based on this, we further rationally adjusted films’ recombination kinetics. We reported a series of highly-efficient green quasi-2D PeLEDs with active areas of 9.0 cm2. The peak EQE of 16.4% is achieved in <n > = 3, represent the most efficient large-area PeLEDs yet. Meanwhile, high brightness device with luminance up to 9.1 × 104 cd m−2 has achieved in <n> = 10 film.

High performance, top-emitting, quantum dot light-emitting diodes with all solution-processed functional layers

2017 ◽  
Vol 5 (35) ◽  
pp. 9138-9145 ◽  
Author(s):  
Zhaobing Tang ◽  
Jie Lin ◽  
Lishuang Wang ◽  
Ying Lv ◽  
Yongsheng Hu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Solution Process ◽  
Solution Processed ◽  
Light Emitting

High performance top-emitting green quantum dot light-emitting diodes have been developed based on an all-solution process and with a bottom Al anode.

Fabrication of Large‐Area Uniform Nanometer‐Thick Functional Layers and Their Stacks for Flexible Quantum Dot Light‐Emitting Diodes

Small Methods ◽  
2021 ◽  
pp. 2101030
Author(s):  
Weimin Zhang ◽  
Jinhong Du ◽  
Qinwei Wei ◽  
Dingdong Zhang ◽  
Songfeng Pei ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Large Area ◽  
Light Emitting

Structure optimization of perovskite quantum dot light-emitting diodes

Nanoscale ◽  
2019 ◽  
Vol 11 (11) ◽  
pp. 5021-5029 ◽  
Author(s):  
Qasim Khan ◽  
Alagesan Subramanian ◽  
Guannan Yu ◽  
Khan Maaz ◽  
Delong Li ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Structure Optimization ◽  
Ambient Atmosphere ◽  
Light Emitting ◽  
Inorganic Perovskite

Although all-inorganic perovskite light emitting diodes (PeLED) have satisfactory stability under an ambient atmosphere, producing devices with high performance is challenging.

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