Heat-Treatment-Induced Compositional Evolution and Magnetic State Transition in Magnetic Chalcogenide Semiconductor GeFeTe without Structural Phase Change

2017 ◽  
Vol 9 (44) ◽  
pp. 38651-38661 ◽  
Author(s):  
Jindong Liu ◽  
Daning Shi ◽  
Caixia Kan ◽  
Hao Yang
Keyword(s):  
Heat Treatment ◽  
Phase Change ◽  
State Transition ◽  
Magnetic State ◽  
Structural Phase ◽  
Chalcogenide Semiconductor ◽  
Compositional Evolution ◽  
Structural Phase Change

Novel semi-interpenetrating network structural phase change composites with high phase change enthalpy

AIChE Journal ◽  
2017 ◽  
Vol 64 (2) ◽  
pp. 688-696 ◽  
Author(s):  
Yuang Zhang ◽  
Jinghai Xiu ◽  
Bingtao Tang ◽  
Rongwen Lu ◽  
Shufen Zhang
Keyword(s):  
Phase Change ◽  
Structural Phase ◽  
Interpenetrating Network ◽  
Phase Change Composites ◽  
High Phase ◽  
Structural Phase Change

Paramagnetic probes for structural phase change in diamagnetic AMF3 compounds

1976 ◽  
Vol 12 (1) ◽  
pp. 201-202 ◽  
Author(s):  
J. J. Rousseau ◽  
A. Leble ◽  
J. Y. Buzare ◽  
J. C. Fayet ◽  
M. Rousseau
Keyword(s):  
Phase Change ◽  
Structural Phase ◽  
Paramagnetic Probes ◽  
Structural Phase Change

Chemical states of GeTe thin-film during structural phase-change by annealing in ultra-high vacuum

2008 ◽  
Vol 66 (2) ◽  
pp. 171-174 ◽  
Author(s):  
C. Ko ◽  
Y. M. Lee ◽  
H. J. Shin ◽  
M.-C. Jung ◽  
M. Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Structural Phase ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Chemical States ◽  
Structural Phase Change

Adhesion of Crystalline GeSbTe/TiN Interface Characterized by Four Point Bend, Nanoindentation, and Nanoscratch

2007 ◽  
Vol 997 ◽  
Author(s):  
guohua Wei ◽  
Jun Liu ◽  
David Fillmore ◽  
Mike Violette ◽  
Shifeng Lu
Keyword(s):  
Phase Change ◽  
Process Development ◽  
Structural Phase ◽  
The Past ◽  
Two Samples ◽  
Application Potential ◽  
Point Bend ◽  
Chalcogenide Materials ◽  
Poor Adhesion ◽  
Structural Phase Change

AbstractReversible structural phase change phenomenon of certain chalcogenide materials has been investigated extensively in the past decades. Among various phase change chalcogenide materials, Ge2Sb2Te5 (GST) is the most studied material due to its superior optical, electrical and mechanical properties. One of the challenges in using GST is the poor adhesion between crystalline GeSbTe (c-GST) and the substrate, such as TiN. In this work, the adhesion of the c-GST/TiN interface of two samples deposited by different techniques was characterized using four-point bend, nanoindentation and nanoscratch techniques. The nanoindentation and nanoscratch data agree well with the four point bend data. The paper also discusses the application potential of nanoindentation and nanoscratch techniques as qualitative methods for adhesion evaluation in semiconductor process development.

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