scholarly journals Determination of the True Lateral Grain Size in Organic–Inorganic Halide Perovskite Thin Films

2017 ◽  
Vol 9 (39) ◽  
pp. 33565-33570 ◽  
Author(s):  
Gordon A. MacDonald ◽  
Chelsea M. Heveran ◽  
Mengjin Yang ◽  
David Moore ◽  
Kai Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Halide Perovskite

A thiourea additive-based quadruple cation lead halide perovskite with an ultra-large grain size for efficient perovskite solar cells

Nanoscale ◽  
2019 ◽  
Vol 11 (45) ◽  
pp. 21824-21833 ◽  
Author(s):  
Jyoti V. Patil ◽  
Sawanta S. Mali ◽  
Chang Kook Hong
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Solar Cells ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
Power Conversion ◽  
Perovskite Solar Cells ◽  
Inorganic Perovskite ◽  
Halide Perovskite ◽  
Lead Halide

Controlling the grain size of the organic–inorganic perovskite thin films using thiourea additives now crossing 2 μm size with >20% power conversion efficiency.

scholarly journals Effect of Grain Size on the Fracture Behavior of Organic-Inorganic Halide Perovskite Thin Films for Solar Cells

2020 ◽  
Vol 185 ◽  
pp. 47-50
Author(s):  
Zhenghong Dai ◽  
Srinivas K. Yadavalli ◽  
Mingyu Hu ◽  
Min Chen ◽  
Yuanyuan Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Solar Cells ◽  
Fracture Behavior ◽  
Halide Perovskite

Compact layer free mixed-cation lead mixed-halide perovskite solar cells

2018 ◽  
Vol 54 (21) ◽  
pp. 2623-2626 ◽  
Author(s):  
Zhelu Hu ◽  
Hengyang Xiang ◽  
Mathilde Schoenauer Sebag ◽  
Laurent Billot ◽  
Lionel Aigouy ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Solar Cells ◽  
Electron Transport ◽  
Perovskite Solar Cells ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Compact Layer ◽  
Halide Perovskite ◽  
Planar Electron

Thickness-tunable and compact FA0.83Cs0.17Pb(I0.6Br0.4)3 perovskite thin films are achieved with a large grain size up to 12 microns. They are then employed to fabricate planar electron-transport-layer-free solar cells.

scholarly journals Elucidating the long-range charge carrier mobility in metal halide perovskite thin films

2019 ◽  
Vol 12 (1) ◽  
pp. 169-176 ◽  
Author(s):  
Jongchul Lim ◽  
Maximilian T. Hörantner ◽  
Nobuya Sakai ◽  
James M. Ball ◽  
Suhas Mahesh ◽  
...  
Keyword(s):  
Thin Films ◽  
Charge Carrier ◽  
Long Range ◽  
Carrier Mobility ◽  
Accurate Determination ◽  
Charge Carrier Mobility ◽  
Metal Halide ◽  
Metal Halide Perovskite ◽  
Halide Perovskite

A new optoelectronic technique which enables the accurate determination of the long-range lateral charge carrier mobility of metal halide perovskite films.

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

The crystallization of thin-film ceramics

1992 ◽  
Vol 50 (1) ◽  
pp. 338-339
Author(s):  
J.M. Schwartz ◽  
L.F. Francis ◽  
L.D. Schmidt ◽  
P.S. Schabes-Retchkiman
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Sol Gel ◽  
Processing Route ◽  
Small Areas ◽  
Ceramic Thin Films ◽  
Complex Shapes ◽  
Sol Gel Process ◽  
Ceramic Precursors ◽  
Crystalline Ceramic

Ceramic thin films and coatings are of interest for electrical, optical, magnetic and thermal barrier applications. Critical for improved properties in thin films is the development of specific microstructures during processing. To this end, the sol-gel method is advantageous as a versatile processing route. The sol-gel process involves depositing a solution containing metalorganic or colloidal ceramic precursors onto a substrate and heating the deposited layer to form a crystalline or non-crystalline ceramic coating. This route has several advantages, including the ability to create tailored microstructures and properties, to coat large or small areas, simple or complex shapes, and to more easily prepare multicomponent ceramics. Sol-gel derived coatings are amorphous in the as-deposited state and develop their crystalline structure and microstructure during heat-treatment. We are particularly interested in studying the amorphous to crystalline transformation, because many key features of the microstructure such as grain size and grain size distribution may be linked to this transformation.

Scanning-probe microscope analysis of optical thin films: A new analytical tool in a manufacturing environment

1994 ◽  
Vol 52 ◽  
pp. 1068-1069
Author(s):  
S. P. Sapers ◽  
R. Clark ◽  
P. Somerville
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Control ◽  
Scanning Probe Microscope ◽  
Scanning Probe ◽  
List Type ◽  
Manufacturing Environment ◽  
Physical Measurements ◽  
Probe Microscope

OCLI is a leading manufacturer of thin films for optical and thermal control applications. The determination of thin film and substrate topography can be a powerful way to obtain information for deposition process design and control, and about the final thin film device properties. At OCLI we use a scanning probe microscope (SPM) in the analytical lab to obtain qualitative and quantitative data about thin film and substrate surfaces for applications in production and research and development. This manufacturing environment requires a rapid response, and a large degree of flexibility, which poses special challenges for this emerging technology. The types of information the SPM provides can be broken into three categories:(1)Imaging of surface topography for visualization purposes, especially for samples that are not SEM compatible due to size or material constraints;(2)Examination of sample surface features to make physical measurements such as surface roughness, lateral feature spacing, grain size, and surface area;(3)Determination of physical properties such as surface compliance, i.e. “hardness”, surface frictional forces, surface electrical properties.

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