High-Mobility and Hysteresis-Free Flexible Oxide Thin-Film Transistors and Circuits by Using Bilayer Sol–Gel Gate Dielectrics

2018 ◽  
Vol 10 (3) ◽  
pp. 2679-2687 ◽  
Author(s):  
Jeong-Wan Jo ◽  
Kwang-Ho Kim ◽  
Jaeyoung Kim ◽  
Seok Gyu Ban ◽  
Yong-Hoon Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Sol Gel ◽  
High Mobility ◽  
Oxide Thin Film

scholarly journals Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors

Materials ◽  
2017 ◽  
Vol 10 (6) ◽  
pp. 612 ◽  
Author(s):  
Jae Heo ◽  
Seungbeom Choi ◽  
Jeong-Wan Jo ◽  
Jingu Kang ◽  
Ho-Hyun Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film ◽  
Mobility Solution

Solution-processed lanthanum-doped Al2O3 gate dielectrics for high-mobility metal-oxide thin-film transistors

2018 ◽  
Vol 660 ◽  
pp. 814-818 ◽  
Author(s):  
Jaeyoung Kim ◽  
Seungbeom Choi ◽  
Jeong-Wan Jo ◽  
Sung Kyu Park ◽  
Yong-Hoon Kim
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film

scholarly journals Influence of Hydrogen Ions on the Performance of Thin-Film Transistors with Solution-Processed AlOx Gate Dielectrics

2021 ◽  
Vol 11 (10) ◽  
pp. 4393
Author(s):  
Yongbo Wu ◽  
Linfeng Lan ◽  
Penghui He ◽  
Yilong Lin ◽  
Caihao Deng ◽  
...  
Keyword(s):  
Thin Film ◽  
Water Treatment ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Low Frequency ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Weakly Bound ◽  
Solution Processed ◽  
Frequency Dependent

Over the past decade, there have been many reports on solution-processed oxide thin-film transistors (TFTs) with high mobility (even >100 cm2 V−1s−1). However, the capacitance uncertainty of the solution-processed oxide gate dielectrics leads to serious overestimation of the mobility. Here, solution-processed AlOx dielectrics are investigated systematically, and the effect of mobile ions on the frequency-dependent capacitance of the solution-processed AlOx dielectrics is also studied. It was found that the capacitance of the AlOx depends on the frequency seriously when the annealing temperature is lower than 300 °C, and the water treatment causes more seriously frequency-dependent capacitance. The strong frequency-dependent capacitance of the AlOx annealed at 250 or 300 °C is attributed to relaxation polarization of the weakly bound ions in the incompletely decomposed AlOx films. The water treatment introduces a large number of protons (H+) that would migrate to the ITO/AlOx interface under a certain electric field and form an electric double layer (EDL) that has ultrahigh capacitance at low frequency.

29.1: Invited Paper: Degradation Mechanism of High Mobility Oxide Thin Film Transistors for Next Generation Display

2021 ◽  
Vol 52 (S2) ◽  
pp. 395-398
Author(s):  
Yukiharu Uraoka ◽  
Takanori Takahashi ◽  
Mami Fujii ◽  
J.P. Bermundo ◽  
Ryoko Miyanaga ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Degradation Mechanism ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Next Generation ◽  
Paper Degradation

Stability characteristics of gallium-doped zinc-tin-oxide thin-film transistors fabricated using a sol-gel method

2013 ◽  
Vol 62 (8) ◽  
pp. 1176-1182 ◽  
Author(s):  
Jong Hoon Lee ◽  
Chang Hoi Kim ◽  
Hong Seung Kim ◽  
Jae Hoon Park ◽  
Jin Hwa Ryu ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Gel Method ◽  
Sol Gel Method ◽  
Zinc Tin Oxide

scholarly journals High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al2O3 Gate Dielectric

Materials ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 852 ◽  
Author(s):  
Seungbeom Choi ◽  
Kyung-Tae Kim ◽  
Sung Park ◽  
Yong-Hoon Kim
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Linear Type ◽  
Channel Layer ◽  
Indium Gallium

In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al2O3 (SAO) gate dielectric. Particularly, to enhance to the electrical properties of inkjet-printed IGZO TFTs, a linear-type printing pattern was adopted for printing the IGZO channel layer. Compared to dot array printing patterns (4 × 4 and 5 × 5 dot arrays), the linear-type pattern resulted in the formation of a relatively thin and uniform IGZO channel layer. Also, to improve the subthreshold characteristics and low-voltage operation of the device, a high-k and thin (~10 nm) SAO film was used as the gate dielectric layer. Compared to the devices with SiO2 gate dielectric, the inkjet-printed IGZO TFTs with SAO gate dielectric exhibited substantially high field-effect mobility (30.7 cm2/Vs). Moreover, the subthreshold slope and total trap density of states were also significantly reduced to 0.14 V/decade and 8.4 × 1011/cm2·eV, respectively.

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