Engineering Silver Nanowire Networks: From Transparent Electrodes to Resistive Switching Devices

2017 ◽  
Vol 9 (24) ◽  
pp. 20762-20770 ◽  
Author(s):  
Haiwei Du ◽  
Tao Wan ◽  
Bo Qu ◽  
Fuyang Cao ◽  
Qianru Lin ◽  
...  
2019 ◽  
Vol 6 (11) ◽  
pp. 116316 ◽  
Author(s):  
Xingzhen Yan ◽  
Xu Li ◽  
Lu Zhou ◽  
Xuefeng Chu ◽  
Fan Yang ◽  
...  

2018 ◽  
Vol 29 (42) ◽  
pp. 425201 ◽  
Author(s):  
K Elen ◽  
H Penxten ◽  
S Nagels ◽  
W Deferme ◽  
L Lutsen ◽  
...  

Nanoscale ◽  
2015 ◽  
Vol 7 (41) ◽  
pp. 17410-17423 ◽  
Author(s):  
M. Lagrange ◽  
D. P. Langley ◽  
G. Giusti ◽  
C. Jiménez ◽  
Y. Bréchet ◽  
...  

This article demonstrates a method to calculate the opto-electrical properties of silver nanowire networks used as transparent electrodes. The electical properties can be adjusted by choosing suitable nanowire dimensions and network density for their use in several flexible applications.


Nano Energy ◽  
2015 ◽  
Vol 16 ◽  
pp. 196-206 ◽  
Author(s):  
Manuela Göbelt ◽  
Ralf Keding ◽  
Sebastian W. Schmitt ◽  
Björn Hoffmann ◽  
Sara Jäckle ◽  
...  

2021 ◽  
Author(s):  
Zhengjin Weng ◽  
Zhiwei Zhao ◽  
Helong Jiang ◽  
Yong Fang ◽  
Wei Lei ◽  
...  

Abstract Random nanowire networks (NWNs) are regarded as promising memristive materials for applications in information storage, selectors, and neuromorphic computing. The further insight to understand their resistive switching properties and conduction mechanisms is crucial to realize the full potential of random NWNs. Here, a novel planar memristive device based on necklace-like structure Ag@TiO2 NWN is reported, in which a strategy only using water to tailor the TiO2 shell on Ag core for necklace-like core-shell structure is developed to achieve uniform topology connectivity. With analyzing the influence of compliance current on resistive switching characteristics and further tracing evolution trends of resistance state during the repetitive switching cycles, two distinctive evolution trends of low resistance state failure and high resistance state failure are revealed, which bear resemblance to memory loss and consolidation in biological systems. The underlying conduction mechanisms are related to the modulation of the Ag accumulation dynamics inside the filaments at cross-point junctions within conductive paths of NWNs. An optimizing principle is then proposed to design reproducible and reliable threshold switching devices by tuning the NWN density and electrical stimulation. The optimized threshold switching devices have a high ON/OFF ratio of ~107 with threshold voltage as low as 0.35 V. This work will provide insights into engineering random NWNs for diverse functions by modulating external excitation and optimizing NWN parameters to satisfy specific applications, transforming from neuromorphic systems to threshold switching devices as selectors.


Nanoscale ◽  
2019 ◽  
Vol 11 (42) ◽  
pp. 19969-19979 ◽  
Author(s):  
Sara Aghazadehchors ◽  
Viet Huong Nguyen ◽  
David Muñoz-Rojas ◽  
Carmen Jiménez ◽  
Laetitia Rapenne ◽  
...  

Silver nanowire (AgNW) networks have been lately much investigated thanks to their physical properties and are therefore foreseen to play a key role in many industrial devices as transparent electrodes, but their stability can be an issue.


Materials ◽  
2017 ◽  
Vol 10 (6) ◽  
pp. 570 ◽  
Author(s):  
Daniel Bellet ◽  
Mélanie Lagrange ◽  
Thomas Sannicolo ◽  
Sara Aghazadehchors ◽  
Viet Nguyen ◽  
...  

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