Directional Solvent Vapor Annealing for Crystal Alignment in Solution-Processed Organic Semiconductors

2017 ◽  
Vol 9 (31) ◽  
pp. 26226-26233 ◽  
Author(s):  
Deepak Bharti ◽  
Vivek Raghuwanshi ◽  
Ishan Varun ◽  
Ajay Kumar Mahato ◽  
Shree Prakash Tiwari
Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 113
Author(s):  
Ming-Yi Lin ◽  
Chun-Yu Lee

Inverted solution-processed SMPV1:PC71BM small molecule organic photovoltaic solar cells (SM-OPVs) were fabricated. The power conversion efficiency (PCE) of halogen-free SM-OPVs reached around 5.07%. The absorption spectra at different device thicknesses were simulated by software Fluxim SETFOS 5.0, and compared with the experimental results. To further enhance the performance of halogen-free SM-OPVs, the interface between the active layer and the electrode of the optimized device was treated with the solvent vapor annealing (SVA) process, improving the PCE of the inverted halogen-free SM-OPV to 7.21%.


2019 ◽  
Vol 123 (47) ◽  
pp. 28948-28957 ◽  
Author(s):  
Sarah Rose-Marie Marques ◽  
Ryan C. Selhorst ◽  
Dhandapani Venkataraman ◽  
Michael D. Barnes

2015 ◽  
Vol 106 (18) ◽  
pp. 183302 ◽  
Author(s):  
Jingsheng Miao ◽  
Hui Chen ◽  
Feng Liu ◽  
Baofeng Zhao ◽  
Lingyu Hu ◽  
...  

2018 ◽  
Vol 6 (20) ◽  
pp. 9445-9450 ◽  
Author(s):  
Muhammad T. Sajjad ◽  
Oskar Blaszczyk ◽  
Lethy Krishnan Jagadamma ◽  
Thomas J. Roland ◽  
Mithun Chowdhury ◽  
...  

A post processing method of solvent vapor annealing (SVA) enhances the diffusion length (LD) and domain size in small molecule organic semiconductors which leads to an enhancement in device performance in bulk heterojunction organic photovoltaics.


2016 ◽  
Vol 6 (10) ◽  
pp. 1502579 ◽  
Author(s):  
Jie Min ◽  
Xuechen Jiao ◽  
Ibrahim Ata ◽  
Andres Osvet ◽  
Tayebeh Ameri ◽  
...  

Sensors ◽  
2021 ◽  
Vol 21 (1) ◽  
pp. 226
Author(s):  
Sihui Hou ◽  
Xinming Zhuang ◽  
Huidong Fan ◽  
Junsheng Yu

The microstructure of the organic semiconductor (OSC) active layer is one of the crucial topics to improve the sensing performance of gas sensors. Herein, we introduce a simple solvent vapor annealing (SVA) process to control 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) OSC films morphology and thus yields high-sensitivity nitrogen organic thin-film transistor (OTFT)-based nitrogen dioxide (NO2) sensors. Compared to pristine devices, the toluene SVA-treated devices exhibit an order of magnitude responsivity enhancement to 10 ppm NO2, further with a limit of detection of 148 ppb. Systematic studies on the microstructure of the TIPS-pentacene films reveal the large density grain boundaries formed by the SVA process, improving the capability for the adsorption of gas molecules, thus causing high-sensitivity to NO2. This simple SVA processing strategy provides an effective and reliable access for realizing high-sensitivity OTFT NO2 sensors.


2015 ◽  
Vol 6 (3) ◽  
pp. 1967-1972 ◽  
Author(s):  
Xia Kong ◽  
Xia Zhang ◽  
Dameng Gao ◽  
Dongdong Qi ◽  
Yanli Chen ◽  
...  

Simple solvent vapor annealing over QLS film-based OFET devices fabricated from (Pc)Eu[Pc(ONh)8]Eu[Pc(ONh)8] led to a high and balanced ambipolar performance.


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