Molecular Dynamics Insights into Water–Parylene C Interface: Relevance of Oxygen Plasma Treatment for Biocompatibility

2017 ◽  
Vol 9 (19) ◽  
pp. 16685-16693 ◽  
Author(s):  
Monika Golda-Cepa ◽  
Waldemar Kulig ◽  
Lukasz Cwiklik ◽  
Andrzej Kotarba
Keyword(s):  
Molecular Dynamics ◽  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Parylene C

LDI-MS examination of oxygen plasma modified polymer for designing tailored implant biointerfaces

RSC Advances ◽  
2014 ◽  
Vol 4 (50) ◽  
pp. 26240-26243 ◽  
Author(s):  
M. Gołda-Cępa ◽  
N. Aminlashgari ◽  
M. Hakkarainen ◽  
K. Engvall ◽  
A. Kotarba
Keyword(s):  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Parylene C ◽  
Modified Polymer

A versatile parylene C coating for biomaterials was fabricated by the mild oxygen plasma treatment and examined by the use of LDI-MS..

Development of crystalline–amorphous parylene C structure in micro- and nano-range towards enhanced biocompatibility: the importance of oxygen plasma treatment time

RSC Advances ◽  
2015 ◽  
Vol 5 (60) ◽  
pp. 48816-48821 ◽  
Author(s):  
M. Golda-Cepa ◽  
K. Engvall ◽  
A. Kotarba
Keyword(s):  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Treatment Time ◽  
Chemical Vapour ◽  
Oxygen Plasma Treatment ◽  
Parylene C ◽  
Plasma Treatment Time

The crystalline–amorphous parylene C structure was fabricated by Chemical Vapour Deposited (CVD) and functionalised in the micro- and nano-range with the oxygen plasma treatment.

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Breakdown Voltage ◽  
Oxygen Plasma ◽  
Cutoff Frequency ◽  
Chemical Vapor ◽  
Current Gain ◽  
Organic Chemical ◽  
Oxygen Plasma Treatment ◽  
Gan Hemt ◽  
High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

Fermi-level depinning in metal/Ge interface using oxygen plasma treatment

2019 ◽  
Vol 463 ◽  
pp. 91-95 ◽  
Author(s):  
Vallivedu Janardhanam ◽  
Hyung-Joong Yun ◽  
Inapagundla Jyothi ◽  
Shim-Hoon Yuk ◽  
Sung-Nam Lee ◽  
...  
Keyword(s):  
Fermi Level ◽  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment

Oxygen plasma treatment of HKUST-1 for porosity retention upon exposure to moisture

2017 ◽  
Vol 53 (89) ◽  
pp. 12100-12103 ◽  
Author(s):  
Jaeyeon Bae ◽  
Jin-Woo Jung ◽  
Hyo Yul Park ◽  
Chang-Hee Cho ◽  
Jinhee Park
Keyword(s):  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment

HKUST-1, a representative MOF, can be both regenerated and protected against moisture deactivation by treatment with O2 plasma.

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