Epitaxial Growth of MOF Thin Film for Modifying the Dielectric Layer in Organic Field-Effect Transistors

2017 ◽  
Vol 9 (8) ◽  
pp. 7259-7264 ◽  
Author(s):  
Zhi-Gang Gu ◽  
Shan-Ci Chen ◽  
Wen-Qiang Fu ◽  
Qingdong Zheng ◽  
Jian Zhang
Keyword(s):  
Thin Film ◽  
Epitaxial Growth ◽  
Dielectric Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

scholarly journals DNA adsorption measured with ultra-thin film organic field effect transistors

2009 ◽  
Vol 24 (9) ◽  
pp. 2935-2938 ◽  
Author(s):  
P. Stoliar ◽  
E. Bystrenova ◽  
S.D. Quiroga ◽  
P. Annibale ◽  
M. Facchini ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Dna Adsorption ◽  
Ultra Thin Film

Flexible organic field-effect transistors fabricated by the electrode-peeling transfer

2003 ◽  
Vol 769 ◽  
Author(s):  
Takeshi Yasuda ◽  
Katsuhiko Fujita ◽  
Tetsuo Tsutsui
Keyword(s):  
Dielectric Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Flexible Substrate ◽  
Chemical Vapor ◽  
Solid Substrate ◽  
Semiconductor Material ◽  
Organic Field Effect Transistors ◽  
Gate Electrode ◽  
Micro Patterning

AbstractWe report a simple and mild fabrication of flexible organic field-effect transistors (OFETs) by an electrode-peeling transfer method. Firstly, fine patterns of source-drain metal electrodes were formed on a solid substrate, where a micro-patterning process such as photolithography is applicable. An organic dielectric layer (poly-chloro-p-xylylene) was deposited by a chemical vapor deposition. Then patterned gate electrode was deposited using a shadow mask. On the top surface of the gate electrode, another adhesive flexible substrate was fixed and the stack of the flexible substrate/gate electrode /dielectric layer /source-drain electrode was peeled away from the solid substrate. The peeling-transfer was completed with a help of a self-assembled monolayer of n-decyl mercaptan as a connecting buffer layer between the gold electrodes and the dielectric layer. Then an organic semiconductor material was deposited on the fresh peeled-off surface on the flexible substrate. When pentacene was used as the semiconductor material, the OFETs exhibited a hole mobility of 0.1 cm2/Vs and a current on/off ratio of 105.

Enhanced Mobility of Organic Field-Effect Transistors with Epitaxially Grown C60 Film by in-situ Heat Treatment of the Organic Dielectric

2005 ◽  
Vol 871 ◽  
Author(s):  
Th. B. Singh ◽  
N. Marjanovic ◽  
G. J. Matt ◽  
S. Günes ◽  
N. S. Sariciftci ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Fields ◽  
Field Effect ◽  
Film Growth ◽  
Field Effect Transistors ◽  
Growth Conditions ◽  
Initial Growth ◽  
Organic Field Effect Transistors ◽  
Enhanced Mobility ◽  
High Electric Fields

AbstractElectron mobilities were studied as a function of thin-film growth conditions in hot wall epitaxially grown C60 based field-effect transistors. Mobilities in the range of ∼ 0.5 to 6 cm2/Vs are obtained depending on the thin-film morphology arising from the initial growth conditions. Moreover, the field-effect transistor current is determined by the morphology of the film at the interface with the dielectric, while the upper layers are less relevant to the transport. At high electric fields, a non-linear transport has been observed. This effect is assigned to be either because of the dominance of the contact resistance over the channel resistance or because of the gradual move of the Fermi level towards the band edge as more and more empty traps are filled due to charge injection.

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