Thermoelectric Properties of Indium and Gallium Dually Doped ZnO Thin Films

2016 ◽  
Vol 8 (49) ◽  
pp. 33916-33923 ◽  
Author(s):  
Nhat Hong Tran Nguyen ◽  
Truong Huu Nguyen ◽  
Yi-ren Liu ◽  
Masoud Aminzare ◽  
Anh Tuan Thanh Pham ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Zno Thin Films ◽  
Doped Zno

Structural, optical and thermoelectric properties of Al-doped ZnO thin films prepared by spray pyrolysis

2020 ◽  
Vol 19 ◽  
pp. 100504 ◽  
Author(s):  
Anit K. Ambedkar ◽  
Manohar Singh ◽  
Vipin Kumar ◽  
Virendra Kumar ◽  
Beer Pal Singh ◽  
...  
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Thermoelectric Properties ◽  
Zno Thin Films ◽  
Doped Zno

Study of the effect of stress/strain of mesoporous Al-doped ZnO thin films on thermoelectric properties

2018 ◽  
Vol 82 ◽  
pp. 84-91 ◽  
Author(s):  
Min-Hee Hong ◽  
Haryeong Choi ◽  
Dong Il Shim ◽  
Hyung Hee Cho ◽  
Jiwan Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Zno Thin Films ◽  
Stress Strain ◽  
Doped Zno

Enhanced thermoelectric properties of Al-doped ZnO thin films

2013 ◽  
Vol 1543 ◽  
Author(s):  
P. Mele ◽  
S. Saini ◽  
H. Abe ◽  
H. Honda ◽  
K. Matsumoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Low Temperature ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Superior Performance ◽  
Zno Thin Films ◽  
Doped Zno

ABSTRACTWe have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 and Al2O3 substrates by Pulsed Laser Deposition (PLD) technique at various deposition temperatures (Tdep = 300 °C – 600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K - 600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, with electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K and power factor 0.13 × 10-3 Wm-1K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to × 10-3 Wm-1K-2 at 600 K, surpassing the best AZO film previously reported in literature.

Thermoelectric Properties of Al Doped ZnO Thin Films Fabricated through Inkjet Printing

2019 ◽  
Vol 298 ◽  
pp. 214-219 ◽  
Author(s):  
J.H. Lim
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Thermoelectric Properties ◽  
Zno Thin Films ◽  
Al Doping ◽  
Wurtzite Phase ◽  
Ink Jet Printing ◽  
Ink Jet ◽  
Jet Printing ◽  
Doped Zno

The effects of Al doping to the thermoelectric properties of ZnO thin films fabricated through ink-jet printing were studied in this paper. Ink-jet printing was used to deposit the Al doped ZnO thin films. A minimum of 50 print cycles was required to obtain continuous film with approximately 9 μm thick thin films. It was possible to obtain high thermoelectric properties of ZnO by controlling the ratios of dopant added and the temperature of the heat treatments.The XRD traces of Al doped ZnO exhibit a polycrystalline hexagonal structure for the wurtzite phase of ZnO. There were no additional phase detected for Al doped ZnO thin films with increasing amount of Al dopants and heat treatment temperature. The results show Al doping had improved the thermoelectric properties of ZnO with an increased in electrical conductivity. The electrical conductivity of pure ZnO thin film (5 S/cm) was enhanced with increasing the dopant to 4wt% Al doped ZnO (114 S/cm). Negative Seebeck values were observed for all the samples that indicated n-type semiconductor. Pure ZnO samples have a measured Seebeck coefficient-17.63 μV/K decreased to-14.35 μV/K with 4 wt% Al doped.

Thermoelectric Properties of Al-Doped ZnO Thin Films

2014 ◽  
Vol 43 (6) ◽  
pp. 2145-2150 ◽  
Author(s):  
S. Saini ◽  
P. Mele ◽  
H. Honda ◽  
K. Matsumoto ◽  
K. Miyazaki ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Zno Thin Films ◽  
Doped Zno

Thermoelectric properties optimization of Al-doped ZnO thin films prepared by reactive sputtering Zn–Al alloy target

2013 ◽  
Vol 284 ◽  
pp. 145-149 ◽  
Author(s):  
Ping Fan ◽  
Ying-zhen Li ◽  
Zhuang-hao Zheng ◽  
Qing-yun Lin ◽  
Jing-ting Luo ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Reactive Sputtering ◽  
Zno Thin Films ◽  
Al Alloy ◽  
Alloy Target ◽  
Doped Zno
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