Tuning the Band Bending and Controlling the Surface Reactivity at Polar and Nonpolar Surfaces of ZnO through Phosphonic Acid Binding

2016 ◽  
Vol 8 (45) ◽  
pp. 31392-31402 ◽  
Author(s):  
Alexandra R. McNeill ◽  
Adam R. Hyndman ◽  
Roger J. Reeves ◽  
Alison J. Downard ◽  
Martin W. Allen
Keyword(s):  
Phosphonic Acid ◽  
Surface Reactivity ◽  
Band Bending

Bidirectional Control of the Band Bending at the (2̅01) and (010) Surfaces of β-Ga2O3 Using Aryldiazonium Ion and Phosphonic Acid Grafting

2021 ◽  
Author(s):  
Liam R. Carroll ◽  
Rodrigo F. Martinez-Gazoni ◽  
Nicola Gaston ◽  
Roger J. Reeves ◽  
Alison J. Downard ◽  
...  
Keyword(s):  
Phosphonic Acid ◽  
Band Bending

Tire Treadwear — A Comprehensive Evaluation of the Factors: Generic Type, Aspect Ratio, Tread Pattern, and Tread Composition Part IV: Laboratory Measurement of Mechanical Properties and Mechanical Actions of Tires Relating to Treadwear

1986 ◽  
Vol 14 (4) ◽  
pp. 264-291
Author(s):  
K. L. Oblizajek ◽  
A. G. Veith
Keyword(s):  
Mechanical Properties ◽  
Shear Stress ◽  
Contact Zone ◽  
Flexural Rigidity ◽  
Comprehensive Evaluation ◽  
Shear Stiffness ◽  
Shear Stresses ◽  
Lateral Shear ◽  
Band Bending ◽  
Tread Rubber

Abstract Treadwear is explained by specific mechanical properties and actions of tires. Rubber shear stresses in the contact zone between the tire and the road become large at large slip angles. When normal stresses are insufficient to prevent sliding at the rear of the footprint, wear occurs at a rate that depends on test severity. Two experimental approaches are described to relate treadwear to tire characteristics. The first uses transducers imbedded in a simulated road surface to obtain direct measurements of contact stresses on the loaded, freely-rolling, steered tires. The second approach is developed with the aid of a simple carcass, tread-band, tread-rubber tire model. Various tire structural configurations; characterized by carcass spring rate, edgewise flexural band stiffness, and tread rubber shear stiffness; are simulated and lateral shear stress response in the contact zone is determined. Tires featuring high band stiffness and low carcass stiffness generate lower lateral shear stress levels. Furthermore, coupling of tread-rubber stiffness and band flexural rigidity are important in determining level of shear stresses. Laboratory measurements with the described apparatus produced values of tread-band bending and carcass lateral stiffness for several tire constructions. Good correlation is shown between treadwear and a broad range of tire stiffness and test course severities.

Thermally-Induced Dehydrogenative Coupling of Organosilanes and H-Terminated Silicon Quantum Dots onto Germanane Surfaces

2020 ◽  
Author(s):  
Haoyang Yu ◽  
Alyxandra Thiessen ◽  
Md Asjad Hossain ◽  
Marc Julian Kloberg ◽  
Bernhard Rieger ◽  
...  
Keyword(s):  
2D Materials ◽  
Future Generation ◽  
Optical Devices ◽  
Surface Reactivity ◽  
Organic Monolayers ◽  
Present Contribution ◽  
Thermally Induced ◽  
Dehydrogenative Coupling ◽  
Silicon Quantum Dot ◽  
Covalently Bonded

<div><div><div><p>Covalently bonded organic monolayers play important roles in defining the solution processability, ambient stability, and electronic properties of two-dimensional (2D) materials such as Ge nanosheets (GeNSs); they also hold promise of providing avenues for the fabrication of future generation electronic and optical devices. Functionalization of GeNS normally involves surface moieties linked through covalent Ge−C bonds. In the present contribution we extend the scope of surface linkages to include Si−Ge bonding and present the first demonstration of heteronuclear dehydrocoupling of organosilanes to hydride-terminated GeNSs obtained from the deintercalation and exfoliation of CaGe2. We further exploit this new surface reactivity and demonstrated the preparation of directly bonded silicon quantum dot-Ge nanosheet hybrids.</p></div></div></div>

Dendritic Growth Failure of a Mesa Diode

1997 ◽  
Author(s):  
P. Singh ◽  
V. Cozzolino ◽  
G. Galyon ◽  
R. Logan ◽  
K. Troccia ◽  
...  
Keyword(s):  
Electric Fields ◽  
Dendritic Growth ◽  
Silicon Oxide ◽  
Impact Ionization ◽  
Electron Tunneling ◽  
Growth Failure ◽  
Side Wall ◽  
Oxide Interface ◽  
Band Bending ◽  
Cross Section Area

Abstract The time delayed failure of a mesa diode is explained on the basis of dendritic growth on the oxide passivated diode side walls. Lead dendrites nucleated at the p+ side Pb-Sn solder metallization and grew towards the n side metallization. The infinitesimal cross section area of the dendrites was not sufficient to allow them to directly affect the electrical behavior of the high voltage power diodes. However, the electric fields associated with the dendrites caused sharp band bending near the silicon-oxide interface leading to electron tunneling across the band gap at velocities high enough to cause impact ionization and ultimately the avalanche breakdown of the diode. Damage was confined to a narrow path on the diode side wall because of the limited influence of the electric field associated with the dendrite. The paper presents experimental details that led to the discovery of the dendrites. The observed failures are explained in the context of classical semiconductor physics and electrochemistry.

Sign in / Sign up

Export Citation Format

Share Document