Nondestructive Encapsulation of CdSe/CdS Quantum Dots in an Inorganic Matrix by Pulsed Laser Deposition

2016 ◽  
Vol 8 (34) ◽  
pp. 22361-22368 ◽  
Author(s):  
Antoine Aubret ◽  
Julien Houel ◽  
Antonio Pereira ◽  
Justine Baronnier ◽  
Emmanuel Lhuillier ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Cds Quantum Dots ◽  
Inorganic Matrix

Nonlinear optical properties of self-organized complex oxide Ce:BaTiO3 quantum dots grown by pulsed laser deposition

1999 ◽  
Vol 75 (11) ◽  
pp. 1547-1549 ◽  
Author(s):  
Wensheng Shi ◽  
Zhenghao Chen ◽  
Ningning Liu ◽  
Huibin Lu ◽  
Yueliang Zhou ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Nonlinear Optical ◽  
Pulsed Laser ◽  
Complex Oxide ◽  
Nonlinear Optical Properties ◽  
Laser Deposition ◽  
Self Organized

Germanium-Silicon Quantum Dots Produced by Pulsed Laser Deposition for Photovoltaic Applications

2011 ◽  
Vol 383-390 ◽  
pp. 6270-6276 ◽  
Author(s):  
Li Hao Han ◽  
Jing Wang ◽  
Ren Rong Liang
Keyword(s):  
Quantum Dots ◽  
Pulsed Laser Deposition ◽  
Quartz Substrate ◽  
Low Cost ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Silicon Quantum Dots ◽  
Photovoltaic Application ◽  
Photovoltaic Applications ◽  
Germanium Silicon

Quantum dots applied in solar cells will be of great importance to enhance the quantum tunneling efficiency and improve the photogenerated current transport. In this study, a new easy-to-operate technology was developed to fabricate germanium-silicon quantum dots in a SiOx matrix. The quantum dots were formed by first deposited germanium-rich SiO on quartz substrate using pulsed laser deposition technique and then annealed under a comparatively high temperature. We have demonstrated a stable and low-cost fabrication process which is much cheaper than the epitaxy method to provide for the fabrication of high density germanium-silicon quantum dots. Quantum dots with diameters of 3~4 nm embedded in the amorphous SiOx layer were clearly observed. The morphological features of the thin film were characterized. The optical properties were performed by Raman spectroscopy, photoluminescence spectrum and XRD test respectively to verify the crystallization of quantum dots in the SiOx matrix. Reflectance spectrum displayed a high light absorption rate in a spectra region from 300 nm to 1200 nm, evidencing that germanium-silicon quantum dots have promising features to be used as absorber for photovoltaic application.

Photoelectric Properties of Heterostructures with Oxide Films Containing Si(Ge) Quantum Dots Formed by Pulsed Laser Deposition

2011 ◽  
Vol 6 (4) ◽  
pp. 420-426
Author(s):  
A. V. Sachenko ◽  
D. V. Korbutyak ◽  
Yu. V. Kryuchenko ◽  
E. B. Kaganovich ◽  
E. G. Manoilov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Pulsed Laser Deposition ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Photoelectric Properties ◽  
Ge Quantum Dots
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