Highly Sensitive Thin-Film Field-Effect Transistor Sensor for Ammonia with the DPP-Bithiophene Conjugated Polymer Entailing Thermally Cleavable tert-Butoxy Groups in the Side Chains

2015 ◽  
Vol 8 (6) ◽  
pp. 3635-3643 ◽  
Author(s):  
Yang Yang ◽  
Guanxin Zhang ◽  
Hewei Luo ◽  
Jingjing Yao ◽  
Zitong Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Conjugated Polymer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Side Chains ◽  
Highly Sensitive ◽  
Effect Transistor

scholarly journals Multi-Stimuli-Responsive Field-Effect Transistor with Conjugated Polymer Entailing Spiropyran in the Side Chains

CCS Chemistry ◽  
2020 ◽  
Vol 2 (2) ◽  
pp. 632-641 ◽  
Author(s):  
Jing Ma ◽  
Jianwu Tian ◽  
Zitong Liu ◽  
Dandan Shi ◽  
Xisha Zhang ◽  
...  
Keyword(s):  
Conjugated Polymer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Side Chains ◽  
Stimuli Responsive ◽  
Effect Transistor

scholarly journals Multi-Stimuli-Responsive Field-Effect Transistor with Conjugated Polymer Entailing Spiropyran in the Side Chains

CCS Chemistry ◽  
2020 ◽  
Vol 2 (2) ◽  
pp. 632-641
Author(s):  
Jing Ma ◽  
Jianwu Tian ◽  
Zitong Liu ◽  
Dandan Shi ◽  
Xisha Zhang ◽  
...  
Keyword(s):  
Conjugated Polymer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Side Chains ◽  
Stimuli Responsive ◽  
Effect Transistor

scholarly journals Highly Sensitive and Transparent Urea-EnFET Based Point-of-Care Diagnostic Test Sensor with a Triple-Gate a-IGZO TFT

Sensors ◽  
2021 ◽  
Vol 21 (14) ◽  
pp. 4748
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Thin Film ◽  
Diagnostic Test ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Reliability ◽  
Point Of Care ◽  
Capacitive Coupling ◽  
Highly Sensitive ◽  
Effect Transistor ◽  
Igzo Tft

In this study, we propose a highly sensitive transparent urea enzymatic field-effect transistor (EnFET) point-of-care (POC) diagnostic test sensor using a triple-gate amorphous indium gallium zinc oxide (a-IGZO) thin-film pH ion-sensitive field-effect transistor (ISFET). The EnFET sensor consists of a urease-immobilized tin-dioxide (SnO2) sensing membrane extended gate (EG) and an a-IGZO thin film transistor (TFT), which acts as the detector and transducer, respectively. To enhance the urea sensitivity, we designed a triple-gate a-IGZO TFT transducer with a top gate (TG) at the top of the channel, a bottom gate (BG) at the bottom of the channel, and a side gate (SG) on the side of the channel. By using capacitive coupling between these gates, an extremely high urea sensitivity of 3632.1 mV/pUrea was accomplished in the range of pUrea 2 to 3.5; this is 50 times greater than the sensitivities observed in prior works. High urea sensitivity and reliability were even obtained in the low pUrea (0.5 to 2) and high pUrea (3.5 to 5) ranges. The proposed urea-EnFET sensor with a triple-gate a-IGZO TFT is therefore expected to be useful for POC diagnostic tests that require high sensitivity and high reliability.

scholarly journals Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4213
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Silicon On Insulator ◽  
Sodium Ion ◽  
Ion Sensor ◽  
Highly Sensitive ◽  
Selective Membrane ◽  
Dual Gate ◽  
Effect Transistor

In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl2, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.

Sign in / Sign up

Export Citation Format

Share Document