Multifunctional Mechanical Sensing Electronic Device Based on Triboelectric Anisotropic Crumpled Nanofibrous Mats

2021 ◽  
Author(s):  
Yinben Guo ◽  
Zixi Chen ◽  
Weifeng Yang ◽  
Kerui Li ◽  
Dongye Yang ◽  
...  
Keyword(s):  
Electronic Device ◽  
Mechanical Sensing

Electronic Cone Illumination with the Conventional Transmission Electron Microscope

1977 ◽  
Vol 35 ◽  
pp. 72-73
Author(s):  
William Krakow
Keyword(s):  
Electronic Device ◽  
Chromatic Aberration ◽  
Objective Lens ◽  
Hollow Cone ◽  
Transmission Electron ◽  
Lissajous Figures ◽  
High Resolution Images ◽  
Imaging Mode ◽  
Diffraction Patterns ◽  
Transmission Microscope

An electronic device has been constructed which manipulates the primary beam in the conventional transmission microscope to illuminate a specimen under a variety of virtual condenser aperture conditions. The device uses the existing tilt coils of the microscope, and modulates the D.C. signals to both x and y tilt directions simultaneously with various waveforms to produce Lissajous figures in the back-focal plane of the objective lens. Electron diffraction patterns can be recorded which reflect the manner in which the direct beam is tilted during exposure of a micrograph. The device has been utilized mainly for the hollow cone imaging mode where the device provides a microscope transfer function without zeros in all spatial directions and has produced high resolution images which are also free from the effect of chromatic aberration. A standard second condenser aperture is employed and the width of the cone annulus is readily controlled by defocusing the second condenser lens.

Resistance Monitor and Control for Vacuum Evaporation of Metals and Carbon

1976 ◽  
Vol 34 ◽  
pp. 572-573
Author(s):  
Russell L. Steere ◽  
Eric F. Erbe ◽  
J. Michael Moseley
Keyword(s):  
Electronic Device ◽  
Point Sources ◽  
High Contrast ◽  
Variable Resistor ◽  
Quality Of Results ◽  
Low Contrast ◽  
Evaporation Source ◽  
And Control ◽  
At Will

We have designed and built an electronic device which compares the resistance of a defined area of vacuum evaporated material with a variable resistor. When the two resistances are matched, the device automatically disconnects the primary side of the substrate transformer and stops further evaporation.This approach to controlled evaporation in conjunction with the modified guns and evaporation source permits reliably reproducible multiple Pt shadow films from a single Pt wrapped carbon point source. The reproducibility from consecutive C point sources is also reliable. Furthermore, the device we have developed permits us to select a predetermined resistance so that low contrast high-resolution shadows, heavy high contrast shadows, or any grade in between can be selected at will. The reproducibility and quality of results are demonstrated in Figures 1-4 which represent evaporations at various settings of the variable resistor.

Digital image processing methods applied to the study of annealing time on semiconductor-metal eutectic composites

1988 ◽  
Vol 46 ◽  
pp. 848-849
Author(s):  
J. Hefter
Keyword(s):  
Image Processing ◽  
Digital Image Processing ◽  
Digital Image ◽  
Electronic Device ◽  
Processing System ◽  
Average Diameter ◽  
Eutectic Solidification ◽  
Metal Silicide ◽  
The Matrix ◽  
Microscopic Studies

Semiconductor-metal composites, formed by the eutectic solidification of silicon and a metal silicide have been under investigation for some time for a number of electronic device applications. This composite system is comprised of a silicon matrix containing extended metal-silicide rod-shaped structures aligned in parallel throughout the material. The average diameter of such a rod in a typical system is about 1 μm. Thus, characterization of the rod morphology by electron microscope methods is necessitated.The types of morphometric information that may be obtained from such microscopic studies coupled with image processing are (i) the area fraction of rods in the matrix, (ii) the average rod diameter, (iii) an average circularity (roundness), and (iv) the number density (Nd;rods/cm2). To acquire electron images of these materials, a digital image processing system (Tracor Northern 5500/5600) attached to a JEOL JXA-840 analytical SEM has been used.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

GYROTON – A NEW TYPE OF ELECTRONIC DEVICE ON THE BASIS OF CORRUGATED RESONATOR

2017 ◽  
Vol 76 (20) ◽  
pp. 1777-1795
Author(s):  
S. V. Kolosov ◽  
А. А. Kuraev ◽  
I. Ye. Zaytseva
Keyword(s):  
Electronic Device ◽  
New Type

Quantitative Image Analysis of Fractal-like Thin Films of Organic Semiconductors

2018 ◽  
Author(s):  
Weikun Zhu ◽  
Erfan Mohammadi ◽  
Ying Diao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Image Analysis ◽  
Fractal Dimension ◽  
Organic Semiconductors ◽  
Film Growth ◽  
Electronic Device ◽  
Significant Control ◽  
Semiconductor Thin Films ◽  
Two Parameters

Morphology modulation offers significant control over organic electronic device performance. However, morphology quantification has been rarely carried out via image analysis. In this work, we designed a MATLAB program to evaluate two key parameters describing morphology of small molecule semiconductor thin films: fractal dimension and film coverage. We then employ this program in a case study of meniscus-guided coating of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C<sub>8</sub>-BTBT) under various conditions to analyze a diverse and complex morphology set. The evolution of morphology in terms of fractal dimension and film coverage was studied as a function of coating speed. We discovered that combined fractal dimension and film coverage can quantitatively capture the key characteristics of C<sub>8</sub>-BTBT thin film morphology; change of these two parameters further inform morphology transition. Furthermore, fractal dimension could potentially shed light on thin film growth mechanisms.

Fault Localization and Functional Testing of ICs by Lock-in Thermography

2002 ◽  
Author(s):  
O. Breitenstein ◽  
J.P. Rakotoniaina ◽  
F. Altmann ◽  
J. Schulz ◽  
G. Linse
Keyword(s):  
Spatial Resolution ◽  
Electronic Device ◽  
Imaging Techniques ◽  
Heat Diffusion ◽  
Acquisition Time ◽  
Temperature Modulation ◽  
Heat Sources ◽  
Ir Camera ◽  
Free Running ◽  
Lock In

Abstract In this paper new thermographic techniques with significant improved temperature and/or spatial resolution are presented and compared with existing techniques. In infrared (IR) lock-in thermography heat sources in an electronic device are periodically activated electrically, and the surface is imaged by a free-running IR camera. By computer processing and averaging the images over a certain acquisition time, a surface temperature modulation below 100 µK can be resolved. Moreover, the effective spatial resolution is considerably improved compared to stead-state thermal imaging techniques, since the lateral heat diffusion is suppressed in this a.c. technique. However, a serious limitation is that the spatial resolution is limited to about 5 microns due to the IR wavelength range of 3 -5 µm used by the IR camera. Nevertheless, we demonstrate that lock-in thermography reliably allows the detection of defects in ICs if their power exceeds some 10 µW. The imaging can be performed also through the silicon substrate from the backside of the chip. Also the well-known fluorescent microthermal imaging (FMI) technique can be be used in lock-in mode, leading to a temperature resolution in the mK range, but a spatial resolution below 1 micron.

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