Effective Breaking of the Fluorocarbon Chain by the Interface Bi2O2X···PFOA Complex Strategy via Coordinated Se on Construction of the Internal Photogenerated Carrier Pathway

2021 ◽  
Author(s):  
Mengbin Gu ◽  
Shangyi Li ◽  
Xueqi Fan ◽  
Jun Huang ◽  
Gang Yu
Keyword(s):  
Photogenerated Carrier ◽  
Fluorocarbon Chain

scholarly journals Flower-like MoS2 microspheres compounded with irregular CdS pyramid heterojunctions: highly efficient and stable photocatalysts for hydrogen production from water

RSC Advances ◽  
2021 ◽  
Vol 11 (37) ◽  
pp. 23064-23072
Author(s):  
Kai He ◽  
Liejin Guo
Keyword(s):  
Hydrogen Production ◽  
Photogenerated Carrier ◽  
Schematic Diagram ◽  
Highly Efficient

Schematic diagram of the photogenerated carrier migration between CdS and MoS2.

scholarly journals Investigation of the Carrier Movement through the Tunneling Junction in the InGaP/GaAs Dual Junction Solar Cell Using the Electrically and Optically Biased Photoreflectance Spectroscopy

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 638
Author(s):  
Sanam SaeidNahaei ◽  
Hyun-Jun Jo ◽  
Sang Jo Lee ◽  
Jong Su Kim ◽  
Sang Jun Lee ◽  
...  
Keyword(s):  
Solar Cell ◽  
Electric Field ◽  
Electric Fields ◽  
Bias Voltage ◽  
Tunnel Junction ◽  
Photogenerated Carrier ◽  
Internal Electric Field ◽  
Junction Solar Cell ◽  
Photoreflectance Spectroscopy ◽  
Dc Bias

For examining the carrier movements through tunnel junction, electrically and optically-biased photoreflectance spectroscopy (EBPR and OBPR) were used to investigate the internal electric field in the InGaP/GaAs dual junction solar cell at room temperature. At InGaP and GaAs, the strength of p-n junction electric fields (Fpn) was perturbed by the external DC bias voltage and CW light intensity for EBPR and OBPR experiments, respectively. Moreover, the Fpn was evaluated using the Fast Fourier Transform (FFT) of the Franz—Keldysh oscillation from PR spectra. In the EBPR, the electric field decreased by increasing the DC bias voltage, which also decreased the potential barrier. In OBPR, when incident CW light is absorbed by the top cell, the decrement of the Fpn in the GaAs cell indicates that the photogenerated carriers are accumulated near the p-n junction. Photogenerated carriers in InGaP can pass through the tunnel junction, and the PR results show the contribution of the modification of the electric field by the photogenerated carriers in each cell. We suggest that PR spectroscopy with optical-bias and electrical-bias could be analyzed using the information of the photogenerated carrier passed through the tunnel junction.

Crystal plane selective adsorption and photogenerated carrier transfer between the SnS2 nanoparticles and AuNCs

2021 ◽  
Vol 44 ◽  
pp. 100499
Author(s):  
Rongpeng Fu ◽  
Bingsheng Li ◽  
Changlu Shao ◽  
Li Li ◽  
Zhiguo Liu ◽  
...  
Keyword(s):  
Selective Adsorption ◽  
Crystal Plane ◽  
Photogenerated Carrier ◽  
Carrier Transfer

High-sensitivity hybrid PbSe/ITZO thin film-based phototransistor detecting from 2100 nm to 2500 nm near-infrared illumination

2022 ◽  
Author(s):  
Ali Sehpar Shikoh ◽  
Gi Sang Choi ◽  
Sungmin Hong ◽  
Kwang Seob Jeong ◽  
Jaekyun Kim
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
High Performance ◽  
Near Infrared ◽  
Effective Diffusion ◽  
Band Alignment ◽  
Oxide Thin Film ◽  
Photogenerated Carrier ◽  
Channel Layer ◽  
Metal Oxide Thin Film

Abstract We report that high absorption PbSe colloidal quantum dots (QDs) having a peak absorbance beyond 2100 nm were synthesized and incorporated into InSnZnO (ITZO) channel layer-based thin film transistors (TFTs). It was intended that PbSe QDs with proportionally less photocurrent modulation can be remedied by semiconducting and low off-current ITZO-based TFT configuration. Multiple deposition scheme of PbSe QDs on ITZO metal oxide thin film gave rise to nearly linear increase of film thickness with acceptably uniform and smooth surface (less than 10 nm). Hybrid PbSe/ITZO thin film-based phototransistor exhibited the best performance of near infrared (NIR) detection in terms of response time, sensitivity and detectivity as high as 0.38 s, 3.91 and 4.55 × 107 Jones at room temperature, respectively. This is indebted mainly from the effective diffusion of photogenerated carrier from the PbSe surface to ITZO channel layer as well as from the conduction band alignment between them. Therefore, we believe that our hybrid PbSe/ITZO material platform can be widely used to be in favour of incorporation of solution-processed colloidal light absorbing material into the high-performance metal oxide thin film transistor configuration.

Enhanced photogenerated carrier collection in hybrid films of bio-templated gold nanowires and nanocrystalline CdSe

2009 ◽  
Vol 20 (41) ◽  
pp. 415206 ◽  
Author(s):  
Elaine D Haberer ◽  
John H Joo ◽  
Juan F Hodelin ◽  
Evelyn L Hu
Keyword(s):  
Photogenerated Carrier ◽  
Gold Nanowires ◽  
Hybrid Films ◽  
Carrier Collection

Photogenerated-carrier separation along edge dislocation of WO3single-crystal nanoflower photoanode

2018 ◽  
Vol 6 (18) ◽  
pp. 8604-8611 ◽  
Author(s):  
Yuyu Bu ◽  
Jun Ren ◽  
Huawei Zhang ◽  
Dongjiang Yang ◽  
Zhuoyuan Chen ◽  
...  
Keyword(s):  
Edge Dislocation ◽  
Separation Efficiency ◽  
Photogenerated Carrier ◽  
Crystal Face ◽  
Carrier Separation

Edge dislocation on WO3nanosheet can induce a crystal face heterojunction system to promote the separation efficiency of photogenerated carrier.

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