scholarly journals Deconvolution of Phonon Scattering by Ferroelectric Domain Walls and Point Defects in a PbTiO3 Thin Film Deposited in a Composition-Spread Geometry

2021 ◽  
Author(s):  
David Bugallo ◽  
Eric Langenberg ◽  
Elias Ferreiro-Vila ◽  
Eva H. Smith ◽  
Christina Stefani ◽  
...  
Keyword(s):  
Thin Film ◽  
Point Defects ◽  
Domain Walls ◽  
Phonon Scattering ◽  
Ferroelectric Domain ◽  
Pbtio3 Thin Film

scholarly journals Doping induced dielectric anomaly below the Curie temperature in molecular ferroelectric diisopropylammonium bromide

2018 ◽  
Vol 5 (11) ◽  
pp. 181397 ◽  
Author(s):  
Kaige Gao ◽  
Binbin Zhang ◽  
Yunqing Cao ◽  
Xiaobing Chen
Keyword(s):  
Point Defects ◽  
Domain Walls ◽  
Ferroelectric Domain ◽  
Dielectric Anomaly ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Potential Applications ◽  
Structure Phase Transition

A dielectric anomaly induced by doping has been observed at about 340 K in chlorine-doped diisopropylammonium bromide. The dielectric anomaly has a switchable behaviour, which indicates potential applications on switches and sensors. Temperature-dependent Raman spectrum, X-ray diffraction and differential scanning calorimetry do not show any anomaly around the dielectric anomaly temperature, which prove that the dielectric anomaly does not come from structure phase transition and has no specific heat variety. It is assumed that this dielectric anomaly can be attributed to the freezing of ferroelectric domain walls induced by the pinning of point defects.

scholarly journals Surface deformation and ferroelectric domain switching induced by a force microscope tip on a La-modified PbTiO3 thin film

2003 ◽  
Vol 83 (10) ◽  
pp. 2028-2030 ◽  
Author(s):  
M. Labardi ◽  
C. Polop ◽  
V. Likodimos ◽  
L. Pardi ◽  
M. Allegrini ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Deformation ◽  
Domain Switching ◽  
Ferroelectric Domain ◽  
Pbtio3 Thin Film

scholarly journals Tunable Non-Volatile Memory by Conductive Ferroelectric Domain Walls in Lithium Niobate Thin Films

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 804
Author(s):  
Thomas Kämpfe ◽  
Bo Wang ◽  
Alexander Haußmann ◽  
Long-Qing Chen ◽  
Lukas M. Eng
Keyword(s):  
Thin Film ◽  
Domain Wall ◽  
Lithium Niobate ◽  
Applied Voltage ◽  
Room Temperature ◽  
Domain Walls ◽  
Ferroelectric Domain ◽  
Stable Set ◽  
Non Volatile Memory ◽  
Binary Information

Ferroelectric domain wall conductance is a rapidly growing field. Thin-film lithium niobate, as in lithium niobate on insulators (LNOI), appears to be an ideal template, which is tuned by the inclination of the domain wall. Thus, the precise tuning of domain wall inclination with the applied voltage can be used in non-volatile memories, which store more than binary information. In this study, we present the realization of this concept for non-volatile memories. We obtain remarkably stable set voltages by the ferroelectric nature of the device as well as a very large increase in the conduction, by at least five orders of magnitude at room temperature. Furthermore, the device conductance can be reproducibly tuned over at least two orders of magnitude. The observed domain wall (DW) conductance tunability by the applied voltage can be correlated with phase-field simulated DW inclination evolution upon poling. Furthermore, evidence for polaron-based conduction is given.

Phonon scattering from ferroelectric domain walls: Phonon imaging in KDP

1993 ◽  
Vol 71 (5) ◽  
pp. 735-738 ◽  
Author(s):  
M. A. Weilert ◽  
M. E. Msall ◽  
A. C. Anderson ◽  
J. P. Wolfe
Keyword(s):  
Domain Walls ◽  
Phonon Scattering ◽  
Ferroelectric Domain

Imaging of ferroelectric domain walls by electron holography

1992 ◽  
Vol 50 (1) ◽  
pp. 246-247
Author(s):  
Xiao Zhang
Keyword(s):  
Magnetic Field ◽  
High Resolution ◽  
Domain Walls ◽  
Ferroelectric Domain ◽  
Object Wave ◽  
Electron Holography ◽  
High Resolution Imaging ◽  
Quantitative Measurements ◽  
Resolution Imaging ◽  
Electron Microscopes

Electron holography has recently been available to modern electron microscopy labs with the development of field emission electron microscopes. The unique advantage of recording both amplitude and phase of the object wave makes electron holography a effective tool to study electron optical phase objects. The visibility of the phase shifts of the object wave makes it possible to directly image the distributions of an electric or a magnetic field at high resolution. This work presents preliminary results of first high resolution imaging of ferroelectric domain walls by electron holography in BaTiO3 and quantitative measurements of electrostatic field distribution across domain walls.

scholarly journals Charged Exciton Kinetics in Monolayer MoSe2 near Ferroelectric Domain Walls in Periodically Poled LiNbO3

Nano Letters ◽  
2021 ◽  
Vol 21 (2) ◽  
pp. 959-966
Author(s):  
Pedro Soubelet ◽  
Julian Klein ◽  
Jakob Wierzbowski ◽  
Riccardo Silvioli ◽  
Florian Sigger ◽  
...  
Keyword(s):  
Domain Walls ◽  
Ferroelectric Domain ◽  
Periodically Poled ◽  
Charged Exciton

Long-range strains and the effects of applied field at 180° ferroelectric domain walls in lithium niobate

2004 ◽  
Vol 69 (6) ◽  
Author(s):  
Terrence Jach ◽  
Sungwon Kim ◽  
Venkatraman Gopalan ◽  
Stephen Durbin ◽  
David Bright
Keyword(s):  
Lithium Niobate ◽  
Long Range ◽  
Applied Field ◽  
Domain Walls ◽  
Ferroelectric Domain

scholarly journals Linear Cherenkov radiation in ferroelectric domain walls

2017 ◽  
Vol 25 (22) ◽  
pp. 27818 ◽  
Author(s):  
Ji Yang ◽  
Xiaohui Zhao ◽  
Haigang Liu ◽  
Xianfeng Chen
Keyword(s):  
Cherenkov Radiation ◽  
Domain Walls ◽  
Ferroelectric Domain
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