The Rise of Silicon Phthalocyanine: From Organic Photovoltaics to Organic Thin Film Transistors

Author(s):  
Benoît H. Lessard
RSC Advances ◽  
2020 ◽  
Vol 10 (22) ◽  
pp. 12876-12882
Author(s):  
Guanlin Wang ◽  
Pankaj Kumar ◽  
Zhifang Zhang ◽  
Arthur D. Hendsbee ◽  
Haitao Liu ◽  
...  

A new azine polymer poly(4,4′-didodecyl-2,2′-bithiophene-azine) (PDDBTA) is synthesized by a simple condensation reaction, which is a promising semiconductor for printed electronics.


Author(s):  
Rosemary Cranston ◽  
Benjamin King ◽  
Chloé Dindault ◽  
Trevor M. Grant ◽  
Nicole Rice ◽  
...  

Silicon phthalocyanine (SiPc) derivatives have recently emerged as promising materials for n-type organic thin-film transistors (OTFTs) with the ability to be fabricated either by solid state or solution processes through...


2019 ◽  
Vol 5 (8) ◽  
pp. 1900087 ◽  
Author(s):  
Owen A. Melville ◽  
Trevor M. Grant ◽  
Brendan Mirka ◽  
Nicholas T. Boileau ◽  
Jeongwon Park ◽  
...  

2019 ◽  
Vol 5 (8) ◽  
pp. 1970041
Author(s):  
Owen A. Melville ◽  
Trevor M. Grant ◽  
Brendan Mirka ◽  
Nicholas T. Boileau ◽  
Jeongwon Park ◽  
...  

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.


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