Mitigating Dark Current for High-Performance Near-Infrared Organic Photodiodes via Charge Blocking and Defect Passivation

2021 ◽  
Vol 13 (14) ◽  
pp. 16766-16774
Author(s):  
Weitao Yang ◽  
Weiming Qiu ◽  
Epimitheas Georgitzikis ◽  
Eddy Simoen ◽  
Jill Serron ◽  
...  
Keyword(s):  
Dark Current ◽  
High Performance ◽  
Near Infrared ◽  
Defect Passivation

scholarly journals Low Dark Current and Performance Enhanced Perovskite Photodetector by Graphene Oxide as an Interfacial Layer

Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 190
Author(s):  
Ali Hassan ◽  
Muhammad Azam ◽  
Yeong Hwan Ahn ◽  
Muhammad Zubair ◽  
Yu Cao ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Dark Current ◽  
High Performance ◽  
Carrier Transport ◽  
Defect Density ◽  
Low Cost ◽  
Degradation Process ◽  
Device Performance ◽  
Interface Engineering ◽  
Defect Passivation

Organic–inorganic hybrid perovskite photodetectors are gaining much interest recently for their high performance in photodetection, due to excellent light absorption, low cost, and ease of fabrication. Lower defect density and large grain size are always favorable for efficient and stable devices. Herein, we applied the interface engineering technique for hybrid trilayer (TiO2/graphene oxide/perovskite) photodetector to attain better crystallinity and defect passivation. The graphene oxide (GO) sandwich layer has been introduced in the perovskite photodetector for improved crystallization, better charge extraction, low dark current, and enhanced carrier lifetime. Moreover, the trilayer photodetector exhibits improved device performance with a high on/off ratio of 1.3 × 104, high responsivity of 3.38 AW−1, and low dark current of 1.55 × 10−11 A. The insertion of the GO layer also suppressed the perovskite degradation process and consequently improved the device stability. The current study focuses on the significance of interface engineering to boost device performance by improving interfacial defect passivation and better carrier transport.

High-performance WO3−x-WSe2/SiO2/n-Si heterojunction near-infrared photodetector via a homo-doping strategy

2018 ◽  
Vol 6 (21) ◽  
pp. 5821-5829 ◽  
Author(s):  
Tianchao Guo ◽  
Cuicui Ling ◽  
Teng Zhang ◽  
Hui Li ◽  
Xiaofang Li ◽  
...  
Keyword(s):  
Barrier Height ◽  
Dark Current ◽  
High Performance ◽  
Near Infrared ◽  
Infrared Photodetector ◽  
Interface Barrier

The enhanced performance of WO3−x-WSe2/SiO2/n-Si can be mainly attributed to the down-shift of the EF of WO3−x-WSe2, which results in a larger interface barrier height and a greatly reduced dark current.

Hybrid nano-scale Au with ITO structure for a high-performance near-infrared silicon-based photodetector with ultralow dark current

2020 ◽  
Vol 8 (11) ◽  
pp. 1662
Author(s):  
Xinxin Li ◽  
Zhen Deng ◽  
Jun Li ◽  
Yangfeng Li ◽  
Linbao Guo ◽  
...  
Keyword(s):  
Dark Current ◽  
High Performance ◽  
Near Infrared ◽  
Nano Scale ◽  
Silicon Based

scholarly journals High-performance photodetector based on an interface engineering-assisted graphene/silicon Schottky junction

2022 ◽  
Vol 8 (1) ◽  
Author(s):  
Peirui Ji ◽  
Shuming Yang ◽  
Yu Wang ◽  
Kaili Li ◽  
Yiming Wang ◽  
...  
Keyword(s):  
Dark Current ◽  
High Performance ◽  
Near Infrared ◽  
Environmental Stability ◽  
Infrared Light ◽  
Broadband Absorption ◽  
Operation Speed ◽  
Novel Structure ◽  
Wide Range ◽  
Iron Garnet

AbstractGraphene/silicon Schottky junctions have been proven efficient for photodetection, but the existing high dark current seriously restricts applications such as weak signal detection. In this paper, a thin layer of gadolinium iron garnet (Gd3Fe5O12, GdIG) film is introduced to engineer the interface of a graphene/silicon Schottky photodetector. The novel structure shows a significant decrease in dark current by 54 times at a −2 V bias. It also exhibits high performance in a self-powered mode in terms of an Ilight/Idark ratio up to 8.2 × 106 and a specific detectivity of 1.35 × 1013 Jones at 633 nm, showing appealing potential for weak-light detection. Practical suitability characterizations reveal a broadband absorption covering ultraviolet to near-infrared light and a large linear response with a wide range of light intensities. The device holds an operation speed of 0.15 ms, a stable response for 500 continuous working cycles, and long-term environmental stability after several months. Theoretical analysis shows that the interlayer increases the barrier height and passivates the contact surface so that the dark current is suppressed. This work demonstrates the good capacity of GdIG thin films as interlayer materials and provides a new solution for high-performance photodetectors.

scholarly journals High-performance near-infrared photodetectors based on gate-controlled graphene–germanium Schottky junction with split active junction

Nanophotonics ◽  
2022 ◽  
Vol 0 (0) ◽  
Author(s):  
Cihyun Kim ◽  
Tae Jin Yoo ◽  
Min Gyu Kwon ◽  
Kyoung Eun Chang ◽  
Hyeon Jun Hwang ◽  
...  
Keyword(s):  
Dark Current ◽  
Interfacial Layer ◽  
High Performance ◽  
Near Infrared ◽  
Infrared Detection ◽  
Schottky Junction ◽  
Internal Electric Field ◽  
Detection Capability ◽  
Junction Device ◽  
Highly Sensitive

Abstract The structure of a gate-controlled graphene/germanium hybrid photodetector was optimized by splitting the active region to achieve highly sensitive infrared detection capability. The strengthened internal electric field in the split active junctions enabled efficient collection of photocarriers, resulting in a responsivity of 2.02 A W−1 and a specific detectivity of 5.28 × 1010 Jones with reduced dark current and improved external quantum efficiency; these results are more than doubled compared with the responsivity of 0.85 A W−1 and detectivity of 1.69 × 1010 Jones for a single active junction device. The responsivity of the optimized structure is 1.7, 2.7, and 39 times higher than that of previously reported graphene/Ge with Al2O3 interfacial layer, gate-controlled graphene/Ge, and simple graphene/Ge heterostructure photodetectors, respectively.

Efficient Defect Passivation with Niacin for High-Performance and Stable Perovskite Solar Cells

2021 ◽  
Author(s):  
Jing Ren ◽  
Shurong Wang ◽  
Jianxing Xia ◽  
Chengbo Li ◽  
Lisha Xie ◽  
...  
Keyword(s):  
Solar Cells ◽  
Charge Carrier ◽  
High Performance ◽  
Perovskite Solar Cells ◽  
Trap States ◽  
Carrier Recombination ◽  
Defect Passivation ◽  
Recombination Centers ◽  
Charge Carrier Recombination ◽  
Halide Perovskite

Defects, inevitably produced in the solution-processed halide perovskite films, can act as charge carrier recombination centers to induce severe energy loss in perovskite solar cells (PSCs). Suppressing these trap states...

High-performance near-infrared photodetectors based on C3N quantum dots integrated with single-crystal graphene

2021 ◽  
Author(s):  
Yun Zhao ◽  
Xiaoqiang Feng ◽  
Menghan Zhao ◽  
Xiaohu Zheng ◽  
Zhiduo Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Single Crystal ◽  
High Performance ◽  
Near Infrared ◽  
Fast Response ◽  
Local Electric Field ◽  
Infrared Photodetectors ◽  
Photocurrent Response

Employing C3N QD-integrated single-crystal graphene, photodetectors exhibited a distinct photocurrent response at 1550 nm. The photocurrent map revealed that the fast response derive from C3N QDs that enhanced the local electric field near graphene.

Sign in / Sign up

Export Citation Format

Share Document