Enhancing Dielectric Strength of Epoxy Polymers by Constructing Interface Charge Traps

2021 ◽  
Author(s):  
Kerong Yang ◽  
Weijiang Chen ◽  
Yushun Zhao ◽  
Yu He ◽  
Xin Chen ◽  
...  
Keyword(s):  
Dielectric Strength ◽  
Epoxy Polymers ◽  
Interface Charge

Characterization of silicon oxide films deposited using tetraethylorthosilicate

1989 ◽  
Vol 67 (4) ◽  
pp. 199-206 ◽  
Author(s):  
M. Simard Normandin ◽  
I. Emesh ◽  
G. D'asti ◽  
A. C. de Wilton ◽  
N. Pearce
Keyword(s):  
Electrical Properties ◽  
Charge Density ◽  
Oxide Films ◽  
Chemical Vapour ◽  
Dielectric Strength ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Interface Charge

Silicon dioxide films prepared by plasma enhanced chemical vapour deposition (PECVD) from tetraethylorthosilicate (TEOS) are known to exhibit better step coverage than films prepared from silane chemistry. We have prepared TEOS oxide films under various processing conditions to investigate their electrical properties in view of their applicability to the fabrication of silicon devices. Films deposited using TEOS only and in the presence of an oxidant such as O2 or N2O were prepared. In each case we have submitted some of the samples to a rapid thermal densification cycle in N2. Metal oxide semiconductor (MOS) capacitors with oxide thickness of 50 nm were prepared for the measurements of dielectric strength, leakage current, flat-band voltage, and interface charge density. Several devices were measured to obtain significant statistical data regarding dielectric strength and uniformity of the film properties over the wafer. Thermal SiO2 films of the same thickness were used for comparison. Thicker films (~500 nm) were also prepared for FTIR (Fourier transform infrared) spectroscopy and ERD (elastic recoil detection), for the characterization of the material properties of the films. We have found that rapid thermal annealing (RTA) does not modify the electrical properties of films deposited with O2 or N2O. For the films deposited without oxidant that did not receive RTA, the flat-band voltage is less than −10 V and the interface charge density cannot be calculated reliably. Films deposited in the absence of oxidant that received RTA and films deposited with N2O with and without RTA have Vfb around −5 V and Qf/q of the order of 2E12 cm−2. Films deposited with O2 have Vfb near −0.6 V and Qf/q near 1E11 cm−2; this compares favorably with thermal oxides that have Vfb of −0.3 V and Qf/q near 1E10 cm−2. These oxides can withstand up to 5 MV/cm of electric field. The material analysis reveals that the oxide films prepared in the presence of either oxygen or nitrous oxide have a more ordered structure and contain fewer impurities that the oxide film prepared with TEOS in a nitrogen only ambient.

Epoxy polymers. V. Dielectric strength

1972 ◽  
Vol 16 (8) ◽  
pp. 1983-1996 ◽  
Author(s):  
R. E. Cuthrell
Keyword(s):  
Dielectric Strength ◽  
Epoxy Polymers

Interface-charge-coupled polarization response of Pt-ZnO-BaTiO3-ZnO-Pt heterostructures: Three-layer model expansion

2008 ◽  
Author(s):  
Venkata M. Voora ◽  
Tino Hofmann ◽  
Matthias Brandt ◽  
Michael Lorenz ◽  
Marius Grundmann ◽  
...  
Keyword(s):  
Layer Model ◽  
Interface Charge ◽  
Polarization Response ◽  
Model Expansion

Assessment of Reliability of cap layers used in Cu-Black DiamondTM Interconnects

2003 ◽  
Vol 766 ◽  
Author(s):  
Ahila Krishnamoorthy ◽  
N.Y. Huang ◽  
Shu-Yunn Chong
Keyword(s):  
Dielectric Layer ◽  
Dielectric Breakdown ◽  
Copper Ions ◽  
Dielectric Strength ◽  
Time Dependent ◽  
Breakdown Field ◽  
Field Range ◽  
Time Dependent Dielectric Breakdown ◽  
Voltage Ramp ◽  
Low K

AbstractBlack DiamondTM. (BD) is one of the primary candidates for use in copper-low k integration. Although BD is SiO2 based, it is vastly different from oxide in terms of dielectric strength and reliability. One of the main reliability concerns is the drift of copper ions under electric field to the surrounding dielectric layer and this is evaluated by voltage ramp (V-ramp) and time dependent dielectric breakdown (TDDB). Metal 1 and Metal 2 intralevel comb structures with different metal widths and spaces were chosen for dielectric breakdown studies. Breakdown field of individual test structures were obtained from V-ramp tests in the temperature range of 30 to 150°C. TDDB was performed in the field range 0.5 – 2 MV/cm. From the leakage between combs at the same level (either metal 1 or metal 2) Cu drift through SiC/BD or SiN/BD interface was characterized. It was found that Cu/barrier and barrier/low k interfaces functioned as easy paths for copper drift thereby shorting the lines. Cu/SiC was found to provide a better interface than Cu/SiN.

A Study of Some Mechanical and Physical Properties for Palm Fiber/Polyester Composite

2020 ◽  
Vol 38 (3B) ◽  
pp. 104-114
Author(s):  
Samah M. Hussein
Keyword(s):  
Mechanical Properties ◽  
Thermal Conductivity ◽  
Dielectric Constant ◽  
Date Palm ◽  
Volume Fraction ◽  
Unsaturated Polyester ◽  
Dielectric Strength ◽  
Palm Fiber ◽  
Mechanical And Physical Properties ◽  
Polyester Composite

This research has been done by reinforcing the matrix (unsaturated polyester) resin with natural material (date palm fiber (DPF)). The fibers were exposure to alkali treatment before reinforcement. The samples have been prepared by using hand lay-up technique with fiber volume fraction of (10%, 20% and 30%). After preparation of the mechanical and physical properties have been studied such as, compression, flexural, impact strength, thermal conductivity, Dielectric constant and dielectric strength. The polyester composite reinforced with date palm fiber at volume fraction (10% and 20%) has good mechanical properties rather than pure unsaturated polyester material, while the composite reinforced with 30% Vf present poor mechanical properties. Thermal conductivity results indicated insulator composite behavior. The effect of present fiber polar group induces of decreasing in dielectric strength, and increasing dielectric constant. The reinforcement composite 20% Vf showed the best results in mechanical, thermal and electrical properties.

Crystallization effect on the dielectric strength of fluorinated parylene at high temperature

2012 ◽  
Vol 15 (2-3) ◽  
pp. 157-168 ◽  
Author(s):  
Mireille Bechara ◽  
Rabih Khazaka ◽  
Sombel Diaham ◽  
Marie-Laure Locatelli ◽  
Pierre Bidan
Keyword(s):  
High Temperature ◽  
Dielectric Strength ◽  
Crystallization Effect
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