Interface Engineering of Cu(In,Ga)Se2 Solar Cells by Optimizing Cd- and Zn-Chalcogenide Alloys as the Buffer Layer

2021 ◽  
Author(s):  
Rong Wang ◽  
Mu Lan ◽  
Yifeng Zheng ◽  
Jingxiu Yang ◽  
Boyan Li ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Interface Engineering ◽  
Chalcogenide Alloys

scholarly journals Deep insights into interface engineering by buffer layer for efficient perovskite solar cells: a first-principles study

2020 ◽  
Vol 63 (8) ◽  
pp. 1588-1596 ◽  
Author(s):  
Le Huang ◽  
Huafeng Dong ◽  
Nengjie Huo ◽  
Zhaoqiang Zheng ◽  
Hui-Xiong Deng ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
First Principles ◽  
Perovskite Solar Cells ◽  
Interface Engineering ◽  
First Principles Study

Efficiency improvement of flexible Sb2Se3 solar cells with non-toxic buffer layer via interface engineering

Nano Energy ◽  
2020 ◽  
Vol 71 ◽  
pp. 104577 ◽  
Author(s):  
Chong Wang ◽  
Shuaicheng Lu ◽  
Sen Li ◽  
Siyu Wang ◽  
Xuetian Lin ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Efficiency Improvement ◽  
Interface Engineering

scholarly journals Optimizing the Performance of CsPbI3-Based Perovskite Solar Cells via Doping a ZnO Electron Transport Layer Coupled with Interface Engineering

2019 ◽  
Vol 11 (1) ◽  
Author(s):  
Man Yue ◽  
Jie Su ◽  
Peng Zhao ◽  
Zhenhua Lin ◽  
Jincheng Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electron Transport ◽  
Buffer Layer ◽  
Doping Concentration ◽  
Perovskite Solar Cells ◽  
Open Circuit ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Interface Engineering ◽  
High Concentration

Abstract Interface engineering has been regarded as an effective and noninvasive means to optimize the performance of perovskite solar cells (PSCs). Here, doping engineering of a ZnO electron transport layer (ETL) and CsPbI3/ZnO interface engineering via introduction of an interfacial layer are employed to improve the performances of CsPbI3-based PSCs. The results show that when introducing a TiO2 buffer layer while increasing the ZnO layer doping concentration, the open-circuit voltage, power conversion efficiency, and fill factor of the CsPbI3-based PSCs can be improved to 1.31 V, 21.06%, and 74.07%, respectively, which are superior to those of PSCs only modified by the TiO2 buffer layer or high-concentration doping of ZnO layer. On the one hand, the buffer layer relieves the band bending and structural disorder of CsPbI3. On the other hand, the increased doping concentration of the ZnO layer improves the conductivity of the TiO2/ZnO bilayer ETL because of the strong interaction between the TiO2 and ZnO layers. However, such phenomena are not observed for those of a PCBM/ZnO bilayer ETL because of the weak interlayer interaction of the PCBM/ZnO interface. These results provide a comprehensive understanding of the CsPbI3/ZnO interface and suggest a guideline to design high-performance PSCs.

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

Nanostructured CdS Buffer Layer Fabricated with a Simple Spin Coating Method for Sb 2 S 3 Solar Cells

2021 ◽  
Author(s):  
Xingyun Liu ◽  
Zitong Feng ◽  
Yuxia Sun ◽  
Mingzhu Su ◽  
Ying Liu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Spin Coating ◽  
Spin Coating Method ◽  
Coating Method
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