One-Step Fabrication Method of GaN Films for Internal Quantum Efficiency Enhancement and Their Ultrafast Mechanism Investigation

2021 ◽  
Vol 13 (6) ◽  
pp. 7688-7697
Author(s):  
Feifei Wang ◽  
Lan Jiang ◽  
Jingya Sun ◽  
Changji Pan ◽  
Yiling Lian ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Fabrication Method ◽  
Efficiency Enhancement ◽  
One Step

scholarly journals Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles

AIP Advances ◽  
2015 ◽  
Vol 5 (9) ◽  
pp. 097169 ◽  
Author(s):  
Daisuke Iida ◽  
Ahmed Fadil ◽  
Yuntian Chen ◽  
Yiyu Ou ◽  
Oleksii Kopylov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Ag Nanoparticles ◽  
Internal Quantum Efficiency ◽  
Efficiency Enhancement ◽  
Quantum Well Structures

Internal quantum efficiency enhancement of silicon nanocrystals using double layer Au-rich cermet films

2010 ◽  
Vol 283 (13) ◽  
pp. 2754-2757 ◽  
Author(s):  
Xuan Tang ◽  
Yuxuan Wang ◽  
Weiwei Ke ◽  
Xue Feng ◽  
Yidong Huang ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Double Layer ◽  
Silicon Nanocrystals ◽  
Internal Quantum Efficiency ◽  
Efficiency Enhancement

scholarly journals Internal Quantum Efficiency Enhancement by Relieving Compressive Stress of GaN-Based LED

2014 ◽  
Vol 26 (18) ◽  
pp. 1793-1796 ◽  
Author(s):  
Yi Chin Lin ◽  
Wei Chih Liu ◽  
Chia Lun Chang ◽  
Chao Chi Chung ◽  
Yan Hao Chen ◽  
...  
Keyword(s):  
Compressive Stress ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Efficiency Enhancement

Emission rate and internal quantum efficiency enhancement in different geometrical shapes of GaN LED

2017 ◽  
Author(s):  
S. Rashid ◽  
M. H. A. Wahid ◽  
N. A. M. Ahmad Hambali ◽  
N. S. A. Abdul Halim ◽  
M. M. Ramli ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Emission Rate ◽  
Internal Quantum Efficiency ◽  
Efficiency Enhancement ◽  
Gan Led ◽  
Geometrical Shapes

scholarly journals Perspectives on UVC LED: Its Progress and Application

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 196
Author(s):  
Tsung-Chi Hsu ◽  
Yu-Tsai Teng ◽  
Yen-Wei Yeh ◽  
Xiaotong Fan ◽  
Kuo-Hsiung Chu ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Flip Chip ◽  
Layer Structure ◽  
Light Emitting Diode ◽  
Internal Quantum Efficiency ◽  
Reverse Current ◽  
Light Extraction ◽  
Epitaxial Layers ◽  
High Electron ◽  
Recombination Rates

High-quality epitaxial layers are directly related to internal quantum efficiency. The methods used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light-emitting diode (LED) epitaxial layer structure exhibits electron leakage; therefore, many research groups have proposed the design of blocking layers and carrier transportation to generate high electron–hole recombination rates. This also aids in increasing the internal quantum efficiency. The cap layer, p-GaN, exhibits high absorption in deep UV radiation; thus, a small thickness is usually chosen. Flip chip design is more popular for such devices in the UV band, and the main factors for consideration are light extraction and heat transportation. However, the choice of encapsulation materials is important, because unsuitable encapsulation materials will be degraded by ultraviolet light irradiation. A suitable package design can account for light extraction and heat transportation. Finally, an atomic layer deposition Al2O3 film has been proposed as a mesa passivation layer. It can provide a low reverse current leakage. Moreover, it can help increase the quantum efficiency, enhance the moisture resistance, and improve reliability. UVC LED applications can be used in sterilization, water purification, air purification, and medical and military fields.

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