scholarly journals On the Correlation between Light-Induced Degradation and Minority Carrier Traps in Boron-Doped Czochralski Silicon

2021 ◽  
Vol 13 (5) ◽  
pp. 6140-6146
Author(s):  
Saman Jafari ◽  
Yan Zhu ◽  
Fiacre Rougieux ◽  
Joyce Ann T. De Guzman ◽  
Vladimir P. Markevich ◽  
...  
Keyword(s):  
Minority Carrier ◽  
Czochralski Silicon ◽  
Boron Doped ◽  
Carrier Traps

Minority carrier lifetime degradation in boron-doped Czochralski silicon

2001 ◽  
Vol 90 (5) ◽  
pp. 2397-2404 ◽  
Author(s):  
S. W. Glunz ◽  
S. Rein ◽  
J. Y. Lee ◽  
W. Warta
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Czochralski Silicon ◽  
Boron Doped

Atomic Structure of Light-Induced Efficiency-Degrading Defect in Boron-doped Czochralski Silicon Solar Cells

2021 ◽  
Author(s):  
Abigail Rose Meyer ◽  
Craig P Taylor ◽  
Michael Venuti ◽  
Serena Eley ◽  
Vincenzo LaSalvia ◽  
...  
Keyword(s):  
Solar Cells ◽  
Atomic Structure ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Light Exposure ◽  
Minority Carrier Lifetime ◽  
Silicon Solar Cells ◽  
Czochralski Silicon ◽  
Boron Doped

Boron-doped Czochralski (Cz) Si is the most commonly used semiconductor in the fabrication of solar cells. The minority carrier lifetime in boron-doped Cz Si decreases upon light exposure due to...

Semi-Insulating Silicon for Microwave Devices

2009 ◽  
Vol 156-158 ◽  
pp. 101-106 ◽  
Author(s):  
Douglas M. Jordan ◽  
Kanad Mallik ◽  
Robert J. Falster ◽  
Peter R. Wilshaw
Keyword(s):  
Room Temperature ◽  
Energy Levels ◽  
Silicon On Insulator ◽  
Microwave Devices ◽  
Insulating Material ◽  
Czochralski Silicon ◽  
Boron Doped ◽  
Microwave Applications ◽  
Soi Substrates ◽  
Phosphorus Doped

The concept of fully encapsulated, semi-insulating silicon (SI-Si), Czochralski-silicon-on-insulator (CZ-SOI) substrates for silicon microwave devices is presented. Experimental results show that, using gold as a compensating impurity, a Si resistivity of order 400 kΩcm can be achieved at room temperature using lightly phosphorus doped substrates. This compares favourably with the maximum of ~180kΩcm previously achieved using lightly boron doped wafers and is due to a small asymmetry of the position of the two gold energy levels introduced into the band gap. Measurements of the temperature dependence of the resistivity of the semi-insulating material show that a resistivity ~5kΩcm can be achieved at 100°C. Thus the substrates are suitable for microwave devices working at normal operating temperatures and should allow Si to be used for much higher frequency microwave applications than currently possible.

Minority Carrier Diffusion Length Improvement in Czochralski Silicon by Aluminum Gettering

1995 ◽  
Vol 378 ◽  
Author(s):  
Subhash M. Joshi ◽  
Ylrich M. GÖsele ◽  
Teh Y. Tan
Keyword(s):  
Solar Cell ◽  
Integrated Circuits ◽  
Minority Carrier ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion ◽  
Solar Cell Efficiency ◽  
Czochralski Silicon ◽  
Si Substrates ◽  
Cell Efficiency ◽  
Si Wafer

AbstractGettering is widely used for fabricating integrated circuits using Si substrates, and has great potential for solar cell fabrications as well. Recently available solar cell efficiency studies have shown the benefits of the wafer backside Al, attributable to effects of gettering, a wafer backside field, and passivation of grain boundaries and dislocations. In this paper, we report experimental results which showed unambiguously that Czochralski Si wafer bulk minority carrier diffusion lengths can be significantly improved due to gettering of impurities by wafer backside Al, which also provided a protection from environmental contamination.

Minority Carrier Lifetime in Czochralski Silicon Containing Oxide Precipitates

2019 ◽  
Vol 33 (11) ◽  
pp. 121-132 ◽  
Author(s):  
John D. Murphy ◽  
Karsten Bothe ◽  
Massimiliano Olmo ◽  
Vladimir V. Voronkov ◽  
Robert J. Falster
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Czochralski Silicon

Reassessments of Minority Carrier Traps in Silicon With Photoconductance Decay Measurements

2019 ◽  
Vol 9 (3) ◽  
pp. 652-659 ◽  
Author(s):  
Yan Zhu ◽  
Mattias Klaus Juhl ◽  
Gianluca Coletti ◽  
Ziv Hameiri
Keyword(s):  
Minority Carrier ◽  
Carrier Traps
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