scholarly journals Additive Lithography–Organic Monolayer Patterning Coupled with an Area-Selective Deposition

2021 ◽  
Vol 13 (7) ◽  
pp. 9081-9090
Author(s):  
Rudy Wojtecki ◽  
Jonathan Ma ◽  
Isvar Cordova ◽  
Noel Arellano ◽  
Krystelle Lionti ◽  
...  
Keyword(s):  
Selective Deposition ◽  
Organic Monolayer

Selective deposition and luminescence characterization of Eu-doped Y[sub 2]O[sub 3] nanoparticles by microwave plasma synthesis

1998 ◽  
Vol 6 (3) ◽  
pp. 143 ◽  
Author(s):  
P. D. Milewski ◽  
S. K. Streiffer ◽  
A. I. Kingon ◽  
I. K. Shmagin ◽  
R. M. Kolbas ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Plasma Synthesis ◽  
Selective Deposition ◽  
Microwave Plasma Synthesis

Laser selective deposition of III–V compounds on GaAs and Si substrates

1986 ◽  
Vol 77 (1-3) ◽  
pp. 229-234 ◽  
Author(s):  
S.M. Bedair ◽  
J.K. Whisnant ◽  
N.H. Karam ◽  
D. Griffis ◽  
N.A. El-Masry ◽  
...  
Keyword(s):  
Selective Deposition ◽  
Si Substrates

scholarly journals Potential‐Selective Deposition of Copper from Chloride Solutions Containing Iron

1977 ◽  
Vol 124 (5) ◽  
pp. 669-676 ◽  
Author(s):  
Ralph White ◽  
James A. Trainham ◽  
John Newman ◽  
Thomas W. Chapman
Keyword(s):  
Selective Deposition ◽  
Chloride Solutions

Resistive Switching Characteristics in TiO2 ReRAM with Top Electrode of Co Selectively Formed on SAMs Printed Patterns

2007 ◽  
Vol 124-126 ◽  
pp. 603-606
Author(s):  
Sang Hee Won ◽  
Seung Hee Go ◽  
Jae Gab Lee
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Atomic Layer ◽  
High Resistance State ◽  
Resistive Random Access Memory ◽  
Tio2 Thin Films ◽  
Selective Deposition ◽  
Precise Control ◽  
Resistance State ◽  
Switching Characteristics

Simple process for the fabrication of Co/TiO2/Pt resistive random access memory, called ReRAM, has been developed by selective deposition of Co on micro-contact printed (μ-CP) self assembled monolayers (SAMs) patterns. Atomic Layer Deposition (ALD) was used to deposit TiO2 thin films, showing its ability of precise control over the thickness of TiO2, which is crucial to obtain proper resistive switching properties of TiO2 ReRAM. The fabrication process for Co/TiO2/Pt ReRAM involves the ALD of TiO2 on sputter-deposited Pt bottom electrode, followed by μ-CP with SAMs and then selective deposition of Co. This results in the Co/TiO2/Pt structure ReRAM. For comparison, Pt/TiO2/Pt ReRAM was produced and revealing the similar switching characteristics as that of Co/TiO2/Pt, thus indicating the feasibility of Co replacement with Pt top electrode. The ratios between the high-resistance state (Off state) and the low-resistance state (On state) were larger than 102. Consequently, the selective deposition of Co with μ-CP, newly developed in this study, can simplify the process and thus implemented into the fabrication of ReRAM.

scholarly journals Electrochemical Metal Deposition on Top of an Organic Monolayer

2006 ◽  
Vol 110 (35) ◽  
pp. 17570-17577 ◽  
Author(s):  
Deyu Qu ◽  
Kohei Uosaki
Keyword(s):  
Metal Deposition ◽  
Organic Monolayer

scholarly journals Selective deposition of polycrystalline diamond films using photolithography with addition of nanodiamonds as nucleation centers

2016 ◽  
Vol 116 ◽  
pp. 012001 ◽  
Author(s):  
V V Okhotnikov ◽  
S A Linnik ◽  
A V Gaidaichuk ◽  
D V Shashev ◽  
G Yu Nazarova ◽  
...  
Keyword(s):  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Selective Deposition

Facile rearrangement of molecular layer deposited metalcone thin films by electron beam irradiation for area selective atomic layer deposition

2021 ◽  
Author(s):  
Seunghwan Lee ◽  
GeonHo Baek ◽  
Hye-mi Kim ◽  
Yong-Hwan Kim ◽  
Jin-Seong Park
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Atomic Layer Deposition ◽  
Electron Beam Irradiation ◽  
Molecular Layer ◽  
Atomic Layer ◽  
Beam Irradiation ◽  
Selective Deposition ◽  
Layer Deposition ◽  
Amorphous Structures

Metalcone films can be rearranged from amorphous structures to 2D-like carbon by electron beam irradiation. The irradiated indicone (HQ) film can be used as an inhibitor for selective deposition delaying 20 cycles of ALD of ZnO.

Advanced Damascene integration using selective deposition of barrier metal with Self Assemble Monolayer

2021 ◽  
Author(s):  
H. Kawasaki ◽  
M. Iwashita ◽  
H. Warashina ◽  
H. Nagai ◽  
K. Iwai ◽  
...  
Keyword(s):  
Selective Deposition ◽  
Barrier Metal ◽  
Self Assemble Monolayer
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