Modulating Magnetism in Ferroelectric Polymer-Gated Perovskite Manganite Films with Moderate Gate Pulse Chains

2020 ◽  
Vol 12 (50) ◽  
pp. 56541-56548
Author(s):  
Hon Fai Wong ◽  
Sheung Mei Ng ◽  
Wen Zhang ◽  
Yu Kuai Liu ◽  
Ping Kwan Johnny Wong ◽  
...  
2021 ◽  
Author(s):  
S. S. Kulkarni ◽  
Arundhati H. Patil ◽  
U. V. Khadke

2021 ◽  
Vol 96 ◽  
pp. 107093
Author(s):  
Vera P. Pavlović ◽  
Dragana Tošić ◽  
Radovan Dojčilović ◽  
Duško Dudić ◽  
Miroslav D. Dramićanin ◽  
...  

2021 ◽  
Author(s):  
Sungjun Kim ◽  
Keun Heo ◽  
Sunghun Lee ◽  
Seunghwan Seo ◽  
Hyeongjun Kim ◽  
...  

Recently, various efforts have been made to implement synaptic characteristics with a ferroelectric field-effect transistor (FeFET), but in-depth physical analyses have not been reported thus far.


2021 ◽  
Vol 103 (13) ◽  
Author(s):  
R. D. Johnson ◽  
D. D. Khalyavin ◽  
P. Manuel ◽  
A. A. Belik
Keyword(s):  

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Mingzhi Dai ◽  
Karim Khan ◽  
Shengnan Zhang ◽  
Kemin Jiang ◽  
Xingye Zhang ◽  
...  

Abstract Sub-gap density of states (DOS) is a key parameter to impact the electrical characteristics of semiconductor materials-based transistors in integrated circuits. Previously, spectroscopy methodologies for DOS extractions include the static methods, temperature dependent spectroscopy and photonic spectroscopy. However, they might involve lots of assumptions, calculations, temperature or optical impacts into the intrinsic distribution of DOS along the bandgap of the materials. A direct and simpler method is developed to extract the DOS distribution from amorphous oxide-based thin-film transistors (TFTs) based on Dual gate pulse spectroscopy (GPS), introducing less extrinsic factors such as temperature and laborious numerical mathematical analysis than conventional methods. From this direct measurement, the sub-gap DOS distribution shows a peak value on the band-gap edge and in the order of 1017–1021/(cm3·eV), which is consistent with the previous results. The results could be described with the model involving both Gaussian and exponential components. This tool is useful as a diagnostics for the electrical properties of oxide materials and this study will benefit their modeling and improvement of the electrical properties and thus broaden their applications.


2013 ◽  
Vol 19 (9) ◽  
pp. 3591-3602 ◽  
Author(s):  
Vladimir S. Bystrov ◽  
Ekaterina V. Paramonova ◽  
Igor K. Bdikin ◽  
Anna V. Bystrova ◽  
Robert C. Pullar ◽  
...  

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