Magnetoimpedance of Epitaxial Y3Fe5O12 (001) Thin Film in Low-Frequency Regime

2020 ◽  
Vol 12 (37) ◽  
pp. 41802-41809
Author(s):  
Rohit Medwal ◽  
Ushnish Chaudhuri ◽  
Joseph Vimal Vas ◽  
Angshuman Deka ◽  
Surbhi Gupta ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Frequency ◽  
Frequency Regime

scholarly journals Influence of Li2CO3 addition on electrical and magnetic properties of Ni0.6Mg0.4Fe2O4

2020 ◽  
Vol 10 (03) ◽  
pp. 2050003
Author(s):  
M. R. Hassan ◽  
M. T. Islam ◽  
M. N. I. Khan
Keyword(s):  
Magnetic Properties ◽  
Single Phase ◽  
Low Frequency ◽  
Solid State Reaction Method ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrical And Magnetic Properties ◽  
Frequency Regime ◽  
Xrd Patterns

In this research, influence of adding Li2CO3 (at 0%, 2%, 4%, 6%) on electrical and magnetic properties of [Formula: see text][Formula: see text]Fe2O4 (with 60% Ni and 40% Mg) ferrite has been studied. The samples are prepared by solid state reaction method and sintered at 1300∘C for 6[Formula: see text]h. X-ray diffraction (XRD) patterns show the samples belong to single-phase cubic structure without any impurity phase. The magnetic properties (saturation magnetization and coercivity) of the samples have been investigated by VSM and found that the higher concentration of Li2CO3 reduces the hysteresis loss. DC resistivity increases with Li2CO3 contents whereas it decreases initially and then becomes constant at lower value with temperature which indicates that the studied samples are semiconductor. The dielectric dispersion occurs at a low-frequency regime and the loss peaks are formed in a higher frequency regime, which are due to the presence of resonance between applied frequency and hopping frequency of charge carriers. Notably, the loss peaks are shifted to the lower frequency with Li2CO3 additions.

Low frequency noise in amorphous silicon thin film transistors with SiNx gate dielectric

2009 ◽  
Vol 105 (12) ◽  
pp. 124504 ◽  
Author(s):  
S. L. Rumyantsev ◽  
Sung Hun Jin ◽  
M. S. Shur ◽  
Mun-Soo Park
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Film

Onset of size effects in lattice thermal conductivity and lifetime of low-frequency thermal phonons

2012 ◽  
Vol 1404 ◽  
Author(s):  
A.A. Maznev
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Size Effects ◽  
Lattice Thermal Conductivity ◽  
Low Frequency ◽  
Square Root ◽  
Relaxation Rates ◽  
Frequency Limit ◽  
Conductivity Of Thin Films ◽  
Closed Form Formula

ABSTRACTThe onset of size effects in phonon-mediated thermal transport along a thin film at temperatures comparable or greater than the Debye temperature is analyzed theoretically. Assuming a quadratic frequency dependence of phonon relaxation rates in the low-frequency limit, a simple closed-form formula for the reduction of the in-plane thermal conductivity of thin films is derived. The effect scales as the square root of the film thickness, which leads to the prediction of measurable size-effects even at “macroscopic” distances ~100 μm. However, this prediction needs to be corrected to account for the deviation from the ω−2 dependence of phonon lifetimes at sub-THz frequencies due to the transition from Landau-Rumer to Akhiezer mechanism of phonon dissipation.

Design and optimization of acoustic liners with a shear grazing flow: OPAL software platform applications

2021 ◽  
Vol 263 (6) ◽  
pp. 152-163
Author(s):  
Remi Roncen ◽  
Pierre Vuillemin ◽  
Patricia Klotz ◽  
Frank Simon ◽  
Fabien Méry ◽  
...  
Keyword(s):  
Noise Reduction ◽  
Low Frequency ◽  
Small Scale ◽  
Software Platform ◽  
Total Size ◽  
Linearized Euler Equations ◽  
Design And Optimization ◽  
Acoustic Liners ◽  
Frequency Regime ◽  
Grazing Flow

In the context of noise reduction in diverse applications where a shear grazing flow is present (i.e., engine nacelle, jet pump, landing gear), improved acoustic liner solutions are being sought. This is particularly true in the low-frequency regime, where space constraints currently limit the efficiency of classic liner technology. To perform the required multi-objective optimization of complex meta-surface liner candidates, a software platform called OPAL was developed. Its first goal is to allow the user to assemble a large panel of parallel/serial assembly of unit acoustic elements, including the recent concept of LEONAR materials. Then, the physical properties of this liner can be optimized, relatively to given weighted objectives (noise reduction, total size of the sample, weight), for a given configuration. Alternatively, properties such as the different impedances of liner unit surfaces can be optimized. To accelerate the process, different nested levels of optimization are considered, from 0D analytical coarse designs in order to reduce the parameter space, up to 2D plan or axisymmetric high-order Discontinuous Galerkin resolution of the Linearized Euler Equations. The presentation will focus on the different aspects of liner design considered in OPAL, and present an application on different samples made for a small scale aeroacoustic bench.

1/f Noise Behavior in Pentacene Organic Thin Film Transistors

1999 ◽  
Vol 598 ◽  
Author(s):  
P. V. Necliudov ◽  
D. J. Gundlach ◽  
T. N. Jackson ◽  
S. L. Rumyantsev ◽  
M. S. Shur
Keyword(s):  
Thin Film ◽  
Conducting Polymers ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Drain Current ◽  
Frequency Noise ◽  
Organic Thin Film ◽  
Amorphous Si ◽  
Parameter Values ◽  
Device Noise

ABSTRACTWe studied the low frequency noise in top-contact pentacene Thin Film Transistors (TFTs). The relative spectral noise density of the drain current fluctuations SI/I2 had a form of 1/f noise in the measured frequency range 1Hz - 3.5kHz.Our studies of the noise dependencies on the gate-source VGS and drain-source VDS voltages showed that the dependencies differed from those observed for conducting polymers and resembled those reported for crystalline Si n-MOSFETs.To compare the device noise level with those of other devices and materials, we extracted the Hooge parameter α. In order to calculate the total number of carriers we used a model simulating the device DC characteristics, similar to that for amorphous Si TFTs. The extracted Hooge parameter was 0.04. For an organic material this is an extremely small value, which is three orders of magnitude smaller that the Hooge parameter values reported for conducting polymers and only several times higher than the values for amorphous Si TFTs.

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