Significantly Improving the Crystal Growth of a Cu2ZnSn(S,Se)4 Absorber Layer by Air-Annealing a Cu2ZnSnS4 Precursor Thin Film

2020 ◽  
Vol 12 (37) ◽  
pp. 41590-41595
Author(s):  
Xinan Shi ◽  
Yuxiang Wang ◽  
Hui Yu ◽  
Gang Wang ◽  
Lijian Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Crystal Growth ◽  
Absorber Layer ◽  
Precursor Thin Film

Molecular Dynamics Studies of Surface Nucleation and Crystal Growth of Si on SiO2 Substrates

2005 ◽  
Vol 899 ◽  
Author(s):  
Byoung-Min Lee ◽  
Hong Koo Baik ◽  
Takahide Kuranaga ◽  
Shinji Munetoh ◽  
Teruaki Motooka
Keyword(s):  
Thin Film ◽  
Molecular Dynamics ◽  
Crystal Growth ◽  
Surface Energy ◽  
Md Simulations ◽  
Lower Surface ◽  
Surface Nucleation ◽  
Lower Surface Energy ◽  
Potential Parameters ◽  
Si Thin Film

AbstractMolecular dynamics (MD) simulations of atomistic processes of nucleation and crystal growth of silicon (Si) on SiO2 substrate have been performed using the Tersoff potential based on a combination of Langevin and Newton equations. A new set of potential parameters was used to calculate the interatomic forces of Si and oxygen (O) atoms. It was found that the (111) plane of the Si nuclei formed at the surface was predominantly parallel to the surface of MD cell. The values surface energy for (100), (110), and (111) planes of Si at 77 K were calculated to be 2.27, 1.52, and 1.20 J/m2, respectively. This result suggests that, the nucleation leads to a preferred (111) orientation in the poly-Si thin film at the surface, driven by the lower surface energy.

Organic thin film crystal growth for nonlinear optics: present methods and exploratory developments

2002 ◽  
Vol 3 (4) ◽  
pp. 449-462 ◽  
Author(s):  
Sabine Manetta ◽  
Marcel Ehrensperger ◽  
Christian Bosshard ◽  
Peter Günter
Keyword(s):  
Thin Film ◽  
Crystal Growth ◽  
Nonlinear Optics ◽  
Organic Thin Film

Crystal Growth of β-FeSi2 Thin Film on (100), (110) and (111) Plane of Si and Yittria-stabilized Zirconia Substrates

2006 ◽  
Vol 980 ◽  
Author(s):  
Kensuke Akiyama ◽  
Satoru Kaneko ◽  
Takanori Kiguchi ◽  
Takashi Suemasu ◽  
Takeshi Kimura ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Crystal Growth ◽  
Magnetron Sputtering ◽  
Iron Silicide ◽  
Rf Magnetron Sputtering ◽  
Single Element ◽  
Stabilized Zirconia ◽  
Crystalline Film ◽  
Anions And Cations

AbstractIron silicide thin films were prepared on silicon (Si) and yittria-stabilized zirconia (YSZ) substrates using RF magnetron sputtering and evaporation methods. Epitaxial b-FeSi2 thin films were grown on (100) and (111) planes of Si and YSZ substrates, while noncrystallized films were deposited on (110) plane of both Si and YSZ substrates. The epitaxial relationships between the b-FeSi2 and YSZ were the same as those between b-FeSi2 and Si, in the case of (100) and (111) planes. It is possible that epitaxial b-FeSi2 film can be grown when substrates and b-FeSi2 surfaces consist of either a single element or only cations, while the crystalline film was not shown when either substrate or b-FeSi2 surface consists of a mixture of anions and cations or iron and silicon.

Sign in / Sign up

Export Citation Format

Share Document