Back-Channel Defect Termination by Sulfur for p-Channel Cu2O Thin-Film Transistors

2020 ◽  
Vol 12 (46) ◽  
pp. 51581-51588
Author(s):  
Hsuan Chang ◽  
Chi-Hsin Huang ◽  
Kosuke Matsuzaki ◽  
Kenji Nomura
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Cu2o Thin Film

scholarly journals Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors

2021 ◽  
Vol 13 (3) ◽  
pp. 4156-4164
Author(s):  
Mari Napari ◽  
Tahmida N. Huq ◽  
David J. Meeth ◽  
Mikko J. Heikkilä ◽  
Kham M. Niang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Surface Passivation ◽  
Cu2o Thin Film ◽  
P Type

scholarly journals The Origin of the High Off-State Current in p-Type Cu2O Thin Film Transistors

2017 ◽  
Vol 38 (10) ◽  
pp. 1394-1397 ◽  
Author(s):  
Sanggil Han ◽  
Andrew J. Flewitt
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Cu2o Thin Film ◽  
P Type

Room temperature fabrication of p-channel Cu2O thin-film transistors on flexible polyethylene terephthalate substrates

2012 ◽  
Vol 101 (4) ◽  
pp. 042114 ◽  
Author(s):  
Z. Q. Yao ◽  
S. L. Liu ◽  
L. Zhang ◽  
B. He ◽  
A. Kumar ◽  
...  
Keyword(s):  
Thin Film ◽  
Polyethylene Terephthalate ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Cu2o Thin Film

Investigation of the charge transport mechanism and subgap density of states in p-type Cu2O thin-film transistors

2013 ◽  
Vol 102 (8) ◽  
pp. 082103 ◽  
Author(s):  
Chan-Yong Jeong ◽  
Joonsung Sohn ◽  
Sang-Hun Song ◽  
In-Tak Cho ◽  
Jong-Ho Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Charge Transport ◽  
Density Of States ◽  
Thin Film Transistors ◽  
Transport Mechanism ◽  
Charge Transport Mechanism ◽  
Cu2o Thin Film ◽  
P Type

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

A Proposal of High Performance Organic Thin Film Transistors

2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film
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