Visualization of Charge Transfer from Bacteria to a Self-Doped Conjugated Polymer Electrode Surface Using Conductive Atomic Force Microscopy

2020 ◽  
Vol 12 (36) ◽  
pp. 40778-40785
Author(s):  
David Xi Cao ◽  
Hengjing Yan ◽  
Viktor V. Brus ◽  
Matthew S. Wong ◽  
Guillermo C. Bazan ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Charge Transfer ◽  
Electrode Surface ◽  
Conjugated Polymer ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

In Operando Detection of the Physical Properties Change of the Interfacial Electrolyte during Li-Metal Electrode Reaction by Atomic Force Microscopy

2020 ◽  
Author(s):  
Mitsunori Kitta
Keyword(s):  
Atomic Force Microscopy ◽  
Energy Dissipation ◽  
Physical Properties ◽  
Electrode Surface ◽  
Electrode Reaction ◽  
Metal Electrode ◽  
Ion Concentration ◽  
Force Microscopy ◽  
Atomic Force ◽  
Discharge Reaction

This manuscript propose the operando detection technique of the physical properties change of electrolyte during Li-metal battery operation.The physical properties of electrolyte solution such as viscosity (η) and mass densities (ρ) highly affect the feature of electrochemical Li-metal deposition on the Li-metal electrode surface. Therefore, the operando technique for detection these properties change near the electrode surface is highly needed to investigate the true reaction of Li-metal electrode. Here, this study proved that one of the atomic force microscopy based analysis, energy dissipation analysis of cantilever during force curve motion, was really promising for the direct investigation of that. The solution drag of electrolyte, which is controlled by the physical properties, is directly concern the energy dissipation of cantilever motion. In the experiment, increasing the energy dissipation was really observed during the Li-metal dissolution (discharge) reaction, understanding as the increment of η and ρ of electrolyte via increasing of Li-ion concentration. Further, the dissipation energy change was well synchronized to the charge-discharge reaction of Li-metal electrode.This study is the first report for direct observation of the physical properties change of electrolyte on Li-metal electrode reaction, and proposed technique should be widely interesting to the basic interfacial electrochemistry, fundamental researches of solid-liquid interface, as well as the battery researches.

Fault Isolation of MOL and FEOL Buried Defects Using Conductive Atomic Force Microscopy as a Complement to Passive Voltage Contrast Imaging

2017 ◽  
Author(s):  
Lucile C. Teague Sheridan ◽  
Linda Conohan ◽  
Chong Khiam Oh
Keyword(s):  
Atomic Force Microscopy ◽  
Cmos Technology ◽  
Fault Isolation ◽  
Contrast Imaging ◽  
Conductive Atomic Force Microscopy ◽  
Isolation Technique ◽  
Conductive Afm ◽  
Force Microscopy ◽  
Atomic Force ◽  
Voltage Contrast

Abstract Atomic force microscopy (AFM) methods have provided a wealth of knowledge into the topographic, electrical, mechanical, magnetic, and electrochemical properties of surfaces and materials at the micro- and nanoscale over the last several decades. More specifically, the application of conductive AFM (CAFM) techniques for failure analysis can provide a simultaneous view of the conductivity and topographic properties of the patterned features. As CMOS technology progresses to smaller and smaller devices, the benefits of CAFM techniques have become apparent [1-3]. Herein, we review several cases in which CAFM has been utilized as a fault-isolation technique to detect middle of line (MOL) and front end of line (FEOL) buried defects in 20nm technologies and beyond.

Fault Localization in Contact Level by Using Conductive Atomic Force Microscopy

2003 ◽  
Author(s):  
Jon C. Lee ◽  
J. H. Chuang
Keyword(s):  
Atomic Force Microscopy ◽  
Integrated Circuits ◽  
Fault Localization ◽  
Electrical Characterization ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Optical Electron ◽  
Defect Isolation ◽  
Voltage Contrast

Abstract As integrated circuits (IC) have become more complicated with device features shrinking into the deep sub-micron range, so the challenge of defect isolation has become more difficult. Many failure analysis (FA) techniques using optical/electron beam and scanning probe microscopy (SPM) have been developed to improve the capability of defect isolation. SPM provides topographic imaging coupled with a variety of material characterization information such as thermal, magnetic, electric, capacitance, resistance and current with nano-meter scale resolution. Conductive atomic force microscopy (C-AFM) has been widely used for electrical characterization of dielectric film and gate oxide integrity (GOI). In this work, C-AFM has been successfully employed to isolate defects in the contact level and to discriminate various contact types. The current mapping of C-AFM has the potential to identify micro-leaky contacts better than voltage contrast (VC) imaging in SEM. It also provides I/V information that is helpful to diagnose the failure mechanism by comparing I/V curves of different contact types. C-AFM is able to localize faulty contacts with pico-amp current range and to characterize failure with nano-meter scale lateral resolution. C-AFM should become an important technique for IC fault localization. FA examples of this technique will be discussed in the article.

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