Hierarchical Structuring to Break the Amorphous Limit of Lattice Thermal Conductivity in High-Performance SnTe-Based Thermoelectrics

2020 ◽  
Vol 12 (32) ◽  
pp. 36370-36379
Author(s):  
Lijun Wang ◽  
Min Hong ◽  
Qiang Sun ◽  
Yuan Wang ◽  
Luo Yue ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
High Performance ◽  
Lattice Thermal Conductivity ◽  
Hierarchical Structuring

Thermal Conductivity of Zn4−xCdxSb3 Solid Solutions

1997 ◽  
Vol 478 ◽  
Author(s):  
T. Caillat ◽  
A. Borshchevsky ◽  
J. -P. Fleurial
Keyword(s):  
Thermal Conductivity ◽  
High Performance ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
State Of The Art ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Jet Propulsion ◽  
P Type ◽  
Electrical Conductors

Abstractβ-Zn4Sb3 was recently identified at the Jet Propulsion Laboratory as a new high performance p-type thermoelectric material with a maximum dimensionless thermoelectric figure of merit ZT of 1.4 at a temperature of 673K. A usual approach, used for many state-of-the-art thermoelectric materials, to further improve ZT values is to alloy β-Zn4Sb3 with isostructural compounds because of the expected decrease in lattice thermal conductivity. We have grown Zn4−xCdxSb3 crystals with 0.2≤x<1.2 and measured their thermal conductivity from 10 to 500K. The thermal conductivity values of Zn4−xCdxSb3 alloys are significantly lower than those measured for β-Zn4Sb3 and are comparable to its calculated minimum thermal conductivity. A strong atomic disorder is believed to be primarily at the origin of the very low thermal conductivity of these materials which are also fairly good electrical conductors and are therefore excellent candidates for thermoelectric applications.

scholarly journals Efficient interlayer charge release for high-performance layered thermoelectrics

2020 ◽  
Author(s):  
Hao Zhu ◽  
Zhou Li ◽  
Chenxi Zhao ◽  
Xingxing Li ◽  
Jinlong Yang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
High Performance ◽  
Lattice Thermal Conductivity ◽  
Transport Barrier ◽  
High Seebeck Coefficient ◽  
Valence Bands ◽  
Increase Carrier Concentration

Abstract Many layered superlattice materials intrinsically possess large Seebeck coefficient and low lattice thermal conductivity, but poor electrical conductivity because of the interlayer transport barrier for charges, which has become a stumbling block for achieving high thermoelectric performance. Herein, taking BiCuSeO superlattice as an example, it is demonstrated that efficient interlayer charge release can increase carrier concentration, thereby activating multiple Fermi pockets through Bi/Cu dual vacancies and Pb codoping. Experimental results reveal that the extrinsic charges, which are introduced by Pb and initially trapped in the charge-reservoir [Bi2O2]2+ sublayers, are effectively released into [Cu2Se2]2− sublayers via the channels bridged by Bi/Cu dual vacancies. This efficient interlayer charge release endows dual-vacancy- and Pb-codoped BiCuSeO with increased carrier concentration and electrical conductivity. Moreover, with increasing carrier concentration, the Fermi level is pushed down, activating multiple converged valence bands, which helps to maintain a relatively high Seebeck coefficient and yield an enhanced power factor. As a result, a high ZT value of ∼1.4 is achieved at 823 K in codoped Bi0.90Pb0.06Cu0.96SeO, which is superior to that of pristine BiCuSeO and solely doped samples. The present findings provide prospective insights into the exploration of high-performance thermoelectric materials and the underlying transport physics.

scholarly journals Ternary selenides A2Sb4Se8 (A = K, Rb and Cs) as an n-type thermoelectric material with high power factor and low lattice thermal conductivity: importance of the conformationally flexible Sb–Se–Se–Sb bridges

RSC Advances ◽  
2020 ◽  
Vol 10 (24) ◽  
pp. 14415-14421
Author(s):  
Changhoon Lee ◽  
Sujee Kim ◽  
Won-Joon Son ◽  
Ji-Hoon Shim ◽  
Myung-Hwan Whangbo
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Thermoelectric Material ◽  
Power Factor ◽  
High Power ◽  
High Performance ◽  
Lattice Thermal Conductivity ◽  
High Power Factor

The ternary selenides A2Sb4Se8 (A = K, Rb, Cs) are predicted to be a high-performance n-type thermoelectric material, and the conformationally-flexible Sb–Se(2)–Se(2)–Sb bridges are crucial in determining the thermoelectric properties of A2Sb4Se8.

scholarly journals Bonding Heterogeneity in Mixed-Anion Compounds Realizes Ultralow Lattice Thermal Conductivity

2021 ◽  
Author(s):  
Naoki Sato ◽  
Norihide Kuroda ◽  
Shun Nakamura ◽  
Yukari Katsura ◽  
Ikuzo Kanazawa ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
High Performance ◽  
Lattice Thermal Conductivity ◽  
Phonon Density ◽  
Phonon Density Of States ◽  
Crystalline Materials ◽  
Peak Splitting ◽  
Energy Applications ◽  
Scattering Phase ◽  
Similar Crystal Structure

<p><a>Crystalline materials with intrinsically low lattice thermal conductivity (</a><i>κ</i><sub>lat</sub>) pave the way towards high performance in various energy applications, including thermoelectrics. Here we demonstrate a strategy to realize ultralow <i>κ</i><sub>lat</sub> using mixed-anion compounds. Our calculations reveal that locally distorted structures in chalcohalides MnPnS<sub>2</sub>Cl (Pn = Sb, Bi) derives a bonding heterogeneity, which in turn causes a peak splitting of the phonon density of states. This splitting induces a large amount of scattering phase space. Consequently, <i>κ</i><sub>lat</sub> of MnPnS<sub>2</sub>Cl is significantly lower than that of a single-anion sulfide CuTaS<sub>3</sub> with a similar crystal structure. Experimental <i>κ</i><sub>lat</sub> of MnPnS<sub>2</sub>Cl takes an ultralow value of about 0.5 W m<sup>−1</sup> K<sup>−1</sup> at 300 K. Our findings will encourage the exploration of thermal transport in mixed-anion compounds, which remain a vast unexplored space, especially regarding unexpectedly low <i>κ</i><sub>lat</sub> in lightweight materials derived from the bonding heterogeneity.</p>

Highly Converged Valence Bands and Ultralow Lattice Thermal Conductivity for High‐Performance SnTe Thermoelectrics

2020 ◽  
Vol 132 (27) ◽  
pp. 11208-11215 ◽  
Author(s):  
Debattam Sarkar ◽  
Tanmoy Ghosh ◽  
Ananya Banik ◽  
Subhajit Roychowdhury ◽  
Dirtha Sanyal ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
High Performance ◽  
Lattice Thermal Conductivity ◽  
Valence Bands

Promising thermoelectric materials of Cu3VX4 (X=S, Se, Te): A Cu-V-X framework plus void tunnels

2019 ◽  
Vol 30 (08) ◽  
pp. 1950045
Author(s):  
Xiao-Peng Liu ◽  
Zhen-Zhen Feng ◽  
Shu-Ping Guo ◽  
Yi Xia ◽  
Yongsheng Zhang
Keyword(s):  
Crystal Structure ◽  
Thermal Conductivity ◽  
First Principles ◽  
High Performance ◽  
Lattice Thermal Conductivity ◽  
Lone Pair ◽  
Heusler Compounds ◽  
Filled Skutterudites ◽  
Structure Result ◽  
Lone Pair Electrons

Skutterudites and half-Heusler compounds are well-studied promising thermoelectric (TE) materials due to favorable electrical properties. However, their intrinsic lattice thermal conductivities are so high that various methodologies have been developed to decrease them. Based on our first-principles phonon calculations, we find that thermodynamically stable Cu3VX4 ([Formula: see text], Se, Te) compounds exhibit good thermoelectric properties due to their special crystal structure (a Cu-V-X framework plus large void tunnels). The mechanically stable framework is the favorite pathway for the carrier conduction, which induces high electrical conductivity and power factor (comparative to those of filled-skutterudites and half-Heusler systems). Moreover, the void tunnels in the crystal structure result in unsaturated coordinations at the X sites and corresponding lone-pair electrons, which lower the lattice thermal conductivity. The calculated intrinsic lattice thermal conductivity of Cu3VX4 is much lower than those of the well-studied skutterudites and half-Heusler compounds. Thus, the maximum ZT values approach 1.6 (at 900[Formula: see text]K, [Formula: see text][Formula: see text][Formula: see text]) and 1.2 (at 1000[Formula: see text]K, [Formula: see text][Formula: see text][Formula: see text]) for the p- and n-type Cu3VTe4 compounds, respectively. Our work provides not only distinctive high-performance TE materials (Cu3VX4), but also a guideline for future promising thermoelectric discoveries.

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