Enhanced Average Thermoelectric Figure of Merit of p-Type Zintl Phase Mg2ZnSb2 via Zn Vacancy Tuning and Hole Doping

2020 ◽  
Vol 12 (33) ◽  
pp. 37330-37337
Author(s):  
Yi Niu ◽  
Chengcheng Yang ◽  
Ting Zhou ◽  
Yan Pan ◽  
Jie Song ◽  
...  
2015 ◽  
Vol 3 (20) ◽  
pp. 10777-10786 ◽  
Author(s):  
A. Bhardwaj ◽  
N. S. Chauhan ◽  
D. K. Misra

Several nanostructuring methods have been demonstrated to produce a variety of nanostructured materials, and these methods are well recognized as effective paradigms for improving the performance of thermoelectric materials.


2007 ◽  
Vol 46 (No. 27) ◽  
pp. L673-L675 ◽  
Author(s):  
Takeyuki Sekimoto ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka

RSC Advances ◽  
2016 ◽  
Vol 6 (115) ◽  
pp. 114825-114829 ◽  
Author(s):  
Tessera Alemneh Wubieneh ◽  
Cheng-Lung Chen ◽  
Pai Chun Wei ◽  
Szu-Yuan Chen ◽  
Yang-Yuan Chen

Ge doping enables to enhance the thermoelectric figure of merit of SnSe..


Author(s):  
А.А. Шабалдин ◽  
П.П. Константинов ◽  
Д.А. Курдюков ◽  
Л.Н. Лукьянова ◽  
А.Ю. Самунин ◽  
...  

AbstractNanocomposite thermoelectrics based on Bi_0.45Sb_1.55Te_2.985 solid solution of p -type conductivity are fabricated by the hot pressing of nanopowders of this solid solution with the addition of SiO_2 microparticles. Investigations of the thermoelectric properties show that the thermoelectric power of the nanocomposites increases in a wide temperature range of 80–420 K, while the thermal conductivity considerably decreases at 80–320 K, which, despite a decrease in the electrical conductivity, leads to an increase in the thermoelectric efficiency in the nanostructured material without the SiO_2 addition by almost 50% (at 300 K). When adding SiO_2, the efficiency decreases. The initial thermoelectric fabricated without nanostructuring, in which the maximal thermoelectric figure of merit ZT = 1 at 390 K, is most efficient at temperatures above 350 K.


2013 ◽  
Vol 69 (5) ◽  
pp. 397-400 ◽  
Author(s):  
Ding-Bang Xiong ◽  
Norihiko L. Okamoto ◽  
Haruyuki Inui

2020 ◽  
Vol 12 (11) ◽  
pp. 12901-12909 ◽  
Author(s):  
Xiaolong Du ◽  
Pengfei Qiu ◽  
Jun Chai ◽  
Tao Mao ◽  
Ping Hu ◽  
...  

2014 ◽  
Vol 2 (22) ◽  
pp. 8512 ◽  
Author(s):  
Yukun Xiao ◽  
Guoxin Chen ◽  
Haiming Qin ◽  
Menglei Wu ◽  
Zhepeng Xiao ◽  
...  

1997 ◽  
Vol 478 ◽  
Author(s):  
T. Caillat ◽  
A. Borshchevsky ◽  
J. -P. Fleurial

Abstractβ-Zn4Sb3 was recently identified at the Jet Propulsion Laboratory as a new high performance p-type thermoelectric material with a maximum dimensionless thermoelectric figure of merit ZT of 1.4 at a temperature of 673K. A usual approach, used for many state-of-the-art thermoelectric materials, to further improve ZT values is to alloy β-Zn4Sb3 with isostructural compounds because of the expected decrease in lattice thermal conductivity. We have grown Zn4−xCdxSb3 crystals with 0.2≤x<1.2 and measured their thermal conductivity from 10 to 500K. The thermal conductivity values of Zn4−xCdxSb3 alloys are significantly lower than those measured for β-Zn4Sb3 and are comparable to its calculated minimum thermal conductivity. A strong atomic disorder is believed to be primarily at the origin of the very low thermal conductivity of these materials which are also fairly good electrical conductors and are therefore excellent candidates for thermoelectric applications.


2013 ◽  
Vol 1 (3) ◽  
pp. 966-969 ◽  
Author(s):  
Ting Zhang ◽  
Jun Jiang ◽  
Yukun Xiao ◽  
Yongbiao Zhai ◽  
Shenghui Yang ◽  
...  

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