scholarly journals Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics

2020 ◽  
Vol 12 (36) ◽  
pp. 40443-40452
Author(s):  
M. C. Giordano ◽  
K. Baumgaertl ◽  
S. Escobar Steinvall ◽  
J. Gay ◽  
M. Vuichard ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Magnetization Dynamics ◽  
Low Resistivity ◽  
Layer Deposition

A Study on the Structure and the Photoelectrical Properties of the Al-Doped ZnO Thin Films by Atomic Layer Deposition in Low Temperatures

2018 ◽  
Vol 18 (12) ◽  
pp. 8333-8336 ◽  
Author(s):  
Guangde Wang ◽  
Xinyu Zhang ◽  
Wenlong Jiang ◽  
Lizhong Wang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Visible Region ◽  
Atomic Layer ◽  
Transparent Electrode ◽  
Low Resistivity ◽  
Photoelectrical Properties ◽  
Photoelectric Properties ◽  
Layer Deposition ◽  
Doping Ratio

The AZO transparent conductive films are prepared by the atomic layer deposition (ALD) at a low temperature of 150 °C. The different Al–Zn doping ratios were designed during the deposition. The phase structure of the films was characterized by XRD, the electrical properties of thin films were analyzed by the Holzer test, and the optical properties of thin films were analyzed by the UV-3600 (UV-VIS-NIR) spectrophotometer. The results showed that all the films preferred the orientation of the C axis during the growth process, the AZO films have a very low resistivity of 6.955×10−4 Ω·cm with the Al doping ratio by 2%, the deposition temperature is 150 °C and the thickness of the film is 200 nm. The transmission of AZO films with the different doping ratios in the visible region is 85%. The proper doping ratio can be selected to get the excellent photoelectric properties of AZO thin films. Such low resistivity AZO transparent conductive film is expected to replace the ITO as the transparent electrode for the organic light-emitting devices and the other new generation of the optoelectronic devices.

Low-Temperature Atomic Layer Deposition of Low-Resistivity Copper Thin Films Using Cu(dmap)2 and Tertiary Butyl Hydrazine

2017 ◽  
Vol 29 (15) ◽  
pp. 6502-6510 ◽  
Author(s):  
Katja Väyrynen ◽  
Kenichiro Mizohata ◽  
Jyrki Räisänen ◽  
Daniel Peeters ◽  
Anjana Devi ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tertiary Butyl ◽  
Low Resistivity ◽  
Layer Deposition

Obtaining low resistivity (∼100 μΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor

2018 ◽  
Vol 36 (5) ◽  
pp. 051505 ◽  
Author(s):  
Igor Krylov ◽  
Ekaterina Zoubenko ◽  
Kamira Weinfeld ◽  
Yaron Kauffmann ◽  
Xianbin Xu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tin Films ◽  
Low Resistivity ◽  
Layer Deposition

Low Temperature Growth of High Purity, Low Resistivity Copper Films by Atomic Layer Deposition

2011 ◽  
Vol 23 (20) ◽  
pp. 4417-4419 ◽  
Author(s):  
Thomas J. Knisley ◽  
Thiloka C. Ariyasena ◽  
Timo Sajavaara ◽  
Mark J. Saly ◽  
Charles H. Winter
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
High Purity ◽  
Atomic Layer ◽  
Copper Films ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Low Resistivity ◽  
Layer Deposition

Low Resistivity Titanium Nitride Thin Film Fabricated by Atomic Layer Deposition on Silicon

2021 ◽  
Author(s):  
Cheng-hsuan Kuo ◽  
Victor Wang ◽  
Zichen Zhang ◽  
Jeffrey Spiegelman ◽  
Daniel Alvarez ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Atomic Layer ◽  
Low Resistivity ◽  
Layer Deposition

scholarly journals Synthesis andin situcharacterization of low-resistivity TaNx films by remote plasma atomic layer deposition

2007 ◽  
Vol 102 (8) ◽  
pp. 083517 ◽  
Author(s):  
E. Langereis ◽  
H. C. M. Knoops ◽  
A. J. M. Mackus ◽  
F. Roozeboom ◽  
M. C. M. van de Sanden ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Remote Plasma ◽  
Low Resistivity ◽  
Layer Deposition

scholarly journals Efficient Passivation and Low Resistivity for p+-Si/TiO2 Contact by Atomic Layer Deposition

2020 ◽  
Vol 3 (7) ◽  
pp. 6291-6301 ◽  
Author(s):  
Naeimeh Mozaffari ◽  
Heping Shen ◽  
Yanting Yin ◽  
Yueliang Li ◽  
Daniel Hiller ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Low Resistivity ◽  
Layer Deposition
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